Abstract: The method disclosed herein provides a semiconducting substrate, positioning the substrate in a high density plasma process chamber, and forming a layer of silicon-rich silicon dioxide above the substrate using a high density plasma process with an oxygen/silane flowrate ratio that is less than or equal to 0.625. In another embodiment, the method provides a semiconducting substrate having a partially formed integrated circuit device formed thereabove, the integrated circuit device having a plurality of conductive interconnections, e.g., conductive lines or conductive plugs, formed thereon, and positioning the substrate in a high density plasma process chamber. The method further includes forming a first layer of silicon dioxide between the plurality of conductive interconnections using a high density plasma process with an oxygen/silane flowrate ratio less than 1.0, and forming a layer of insulating material above the first layer between the conductive interconnections.

Abstract: A system and method for recording and addressing out of control (OOC) events in a semiconductor processing line. The method includes steps of (a) opening OOC entries in an OOC database, and (b) working the OOC entries. Opening an OOC entry is performed in response to one or more OOC events in wafer lots being processed in the semiconductor processing line. A lot record addresses an isolated occurrence pertaining to one wafer lot. An issue record addresses a trend of repeated defects or failures. Opening an OOC entry in the OOC database preferably includes assigning and recording an “owner” responsible for addressing the OOC entry. Working the OOC entries includes opening activity records for the OOC entries, receiving user input on corrective measures, and recording the measures in the activity records. The method preferably also includes steps of (c) closing OOC entries after working the OOC entries, and (d) reassigning OOC entries if ownership is transferred for the entries.