Abstract: In certain aspects, a method is provided for measuring power using a resistive element coupled between a power amplifier and an antenna. The method includes squaring a voltage from a first terminal of the resistive element to obtain a first signal, squaring a voltage from a second terminal of the resistive element to obtain a second signal, and generating a measurement signal based on a difference between the first signal and the second signal. In some implementations, the resistive element is implemented with a power switch.

Abstract: In certain aspects, a method is provided for measuring power using a resistive element coupled between a power amplifier and an antenna. The method includes squaring a voltage from a first terminal of the resistive element to obtain a first signal, squaring a voltage from a second terminal of the resistive element to obtain a second signal, and generating a measurement signal based on a difference between the first signal and the second signal. In some implementations, the resistive element is implemented with a power switch.

Abstract: Aspects of the disclosure relate to an apparatus for wireless communication. The apparatus may include a set of power detectors configured to generate a set of analog signals related to a set of output signal power levels of a set of transmit chains of a transmitter, respectively; an analog summer; a set of switching devices configured to send a selected one or more of the set of analog signals to the analog summer, and substantially isolated unselected one or more of the set of power detectors from the analog summer, wherein the analog summer is configured to generate a cumulative analog signal based on a sum of the selected one or more of the set of analog signals; an analog-to-digital converter (ADC) configured to generate a digital signal based on the cumulative analog signal; and a controller configured to control the set of switching devices.

Abstract: A peak detector for a power amplifier is provided that includes a threshold voltage detector configured to pulse a detection current in response to an amplified output signal from the amplifier exceeding a peak threshold. A plurality of such peak detectors may be integrated with a corresponding plurality of power amplifiers in a transmitter. Should any peak detector assert an alarm signal or more than a threshold number of alarm signals during a given period, a controller reduces a gain for the plurality of power amplifiers.

Abstract: Aspects of the disclosure relate to an apparatus for wireless communication. The apparatus may include a set of power detectors configured to generate a set of analog signals related to a set of output signal power levels of a set of transmit chains of a transmitter, respectively; an analog summer; a set of switching devices configured to send a selected one or more of the set of analog signals to the analog summer, and substantially isolated unselected one or more of the set of power detectors from the analog summer, wherein the analog summer is configured to generate a cumulative analog signal based on a sum of the selected one or more of the set of analog signals; an analog-to-digital converter (ADC) configured to generate a digital signal based on the cumulative analog signal; and a controller configured to control the set of switching devices.

Abstract: In certain aspects, a method is provided for measuring power using a resistive element coupled between a power amplifier and an antenna. The method includes squaring a voltage from a first terminal of the resistive element to obtain a first signal, squaring a voltage from a second terminal of the resistive element to obtain a second signal, and generating a measurement signal based on a difference between the first signal and the second signal. In some implementations, the resistive element is implemented with a power switch.

Abstract: The disclosure provides an apparatus including: a pair of signal injection transistors each having a gate terminal coupled to a differential reference signal, and a pair of cross-coupled amplifier transistors configured to amplify a voltage of the differential reference signal to yield a voltage-amplified reference signal at a local oscillator (LO) port of a mixer; an electronic oscillator having an oscillation output node coupled to the LO port of the mixer in parallel with the injection-locked buffer, and configured to generate an oscillator output for transmission to the output node based on a back gate bias voltage applied to the electronic oscillator; and an access transistor having a gate coupled to a switching node, and a back gate terminal coupled to the back gate bias voltage, wherein the access transistor is configured to enable or disable current flow through the electronic oscillator in parallel with the injection-locked buffer.

Abstract: A CMOS gain element is disclosed herein. Also disclosed herein are splitters, comprising the CMOS gain element, and local oscillator distribution circuitry comprising the splitters and the CMOS gain elements. Semiconductor devices comprising the local oscillator distribution circuitry may have smaller footprints and reduced power consumption relative to prior art devices.

Abstract: An apparatus for performing a frequency multiplication of an mm-wave wave signal is provided. The apparatus includes a first differential circuit that is capable of receiving a 0° phase component of an input signal and a 180° phase component of the input signal having a first frequency. The first differential circuit provides a first output signal that is twice the frequency and is in ?phase(0°) based on the 0° the 180° phase components of the input signal. The apparatus also includes a second differential circuit that is capable of receiving a 90° phase component of the input signal and a 270° phase component of the input signal, and provide a first output signal that is twice the frequency and out of phase(180°). The apparatus also includes a differential transformer that is configured to receive the first output signal and the second output signal. The differential transformer is configured to provide a differential output signal that has a second frequency that is twice the first frequency.

Abstract: A CMOS gain element is disclosed herein. Also disclosed herein are splitters, comprising the CMOS gain element, and local oscillator distribution circuitry comprising the splitters and the CMOS gain elements. Semiconductor devices comprising the local oscillator distribution circuitry may have smaller footprints and reduced power consumption relative to prior art devices.

Abstract: The disclosure provides an apparatus including: a pair of signal injection transistors each having a gate terminal coupled to a differential reference signal, and a pair of cross-coupled amplifier transistors configured to amplify a voltage of the differential reference signal to yield a voltage-amplified reference signal at a local oscillator (LO) port of a mixer; an electronic oscillator having an oscillation output node coupled to the LO port of the mixer in parallel with the injection-locked buffer, and configured to generate an oscillator output for transmission to the output node based on a back gate bias voltage applied to the electronic oscillator; and an access transistor having a gate coupled to a switching node, and a back gate terminal coupled to the back gate bias voltage, wherein the access transistor is configured to enable or disable current flow through the electronic oscillator in parallel with the injection-locked buffer.

Abstract: A CMOS gain element is disclosed herein. Also disclosed herein are splitters, comprising the CMOS gain element, and local oscillator distribution circuitry comprising the splitters and the CMOS gain elements. Semiconductor devices comprising the local oscillator distribution circuitry may have smaller footprints and reduced power consumption relative to prior art devices.

Abstract: An apparatus for performing a frequency multiplication of an mm-wave wave signal is provided. The apparatus includes a first differential circuit that is capable of receiving a 0° phase component of an input signal and a 180° phase component of the input signal having a first frequency. The first differential circuit provides a first output signal that is twice the frequency and is in ?phase(0°) based on the 0° the 180° phase components of the input signal. The apparatus also includes a second differential circuit that is capable of receiving a 90° phase component of the input signal and a 270° phase component of the input signal, and provide a first output signal that is twice the frequency and out of phase(180°). The apparatus also includes a differential transformer that is configured to receive the first output signal and the second output signal. The differential transformer is configured to provide a differential output signal that has a second frequency that is twice the first frequency.

Abstract: Embodiments of the present disclosure provide a circuit structure and method for power amplifier control with forward and reverse voltage biases to transistor back-gate regions. A circuit structure according to the disclosure can include: a power amplifier (PA) circuit having first and second transistors, the first and second transistors each including a back-gate region, wherein the back-gate region of each of the first and second transistors is positioned within a doped substrate separated from a semiconductor region by a buried insulator layer; and an analog voltage source coupled to the back-gate regions of the first and second transistors of the PA circuit, such that the analog voltage source alternatively supplies a forward bias voltage or a reverse bias voltage to the back-gate regions of the first and second transistors of the PA circuit to produce a continuously sloped power ramping profile.

Abstract: Embodiments of the present disclosure provide a circuit structure including: a switching transistor including a gate terminal, a back-gate terminal, a source terminal, and a drain terminal; a biasing node coupled to the back-gate terminal of the switching transistor, the biasing node being alternately selectable between an on state and an off state; a first capacitor source-coupled to the switching transistor; a second capacitor drain-coupled to the switching capacitor; and a first enabling node source-coupled to the switching transistor, the first enabling node being alternately selectable between an on state and an off state.

Abstract: A CMOS gain element is disclosed herein. Also disclosed herein are splitters, comprising the CMOS gain element, and local oscillator distribution circuitry comprising the splitters and the CMOS gain elements. Semiconductor devices comprising the local oscillator distribution circuitry may have smaller footprints and reduced power consumption relative to prior art devices.

Abstract: Embodiments of the present disclosure provide a circuit structure and method for power amplifier control with forward and reverse voltage biases to transistor back-gate regions. A circuit structure according to the disclosure can include: a power amplifier (PA) circuit having first and second transistors, the first and second transistors each including a back-gate region, wherein the back-gate region of each of the first and second transistors is positioned within a doped substrate separated from a semiconductor region by a buried insulator layer; and an analog voltage source coupled to the back-gate regions of the first and second transistors of the PA circuit, such that the analog voltage source alternatively supplies a forward bias voltage or a reverse bias voltage to the back-gate regions of the first and second transistors of the PA circuit to produce a continuously sloped power ramping profile.

Abstract: A method of circuit tuning, including: applying a first positive voltage and a second positive voltage to a circuit structure, the circuit structure including a p-type metal-oxide semiconductor (PMOS) device with a flipped well transistor and an n-type metal-oxide semiconductor (NMOS) device; adjusting a first threshold voltage in response to the first positive voltage being applied to a p-well region of the NMOS device and adjusting a second threshold voltage in response to the second positive voltage being applied to the p-well region of the PMOS device; and compensating the first threshold voltage and the second threshold voltage through a backgate of the PMOS device and the NMOS device relative to a same common mode voltage.

Abstract: A method of circuit tuning, including: applying a first positive voltage and a second positive voltage to a circuit structure, the circuit structure including a p-type metal-oxide semiconductor (PMOS) device with a flipped well transistor and an n-type metal-oxide semiconductor (NMOS) device; adjusting a first threshold voltage in response to the first positive voltage being applied to a p-well region of the NMOS device and adjusting a second threshold voltage in response to the second positive voltage being applied to the p-well region of the PMOS device; and compensating the first threshold voltage and the second threshold voltage through a backgate of the PMOS device and the NMOS device relative to a same common mode voltage.

Abstract: Embodiments of the present disclosure provide a circuit structure including: a switching transistor including a gate terminal, a back-gate terminal, a source terminal, and a drain terminal; a biasing node coupled to the back-gate terminal of the switching transistor, the biasing node being alternately selectable between an on state and an off state; a first capacitor source-coupled to the switching transistor; a second capacitor drain-coupled to the switching capacitor; and a first enabling node source-coupled to the switching transistor, the first enabling node being alternately selectable between an on state and an off state.