Abstract: A substrate processing system comprises an upper electrode and a lower electrode arranged in a processing chamber. A gas delivery system selectively delivers at least one of precursor, one or more deposition carrier gases and a post deposition purge gas. An RF generating system deposits film on the substrate by generating RF plasma in the processing chamber between the upper electrode and the lower electrode by supplying an RF voltage to one of the upper electrode and the lower electrode while the precursor and the one or more deposition carrier gases are delivered by the gas delivery system. A bias generating circuit selectively supplies a DC bias voltage to one of the upper electrode and the lower electrode while the post deposition purge gas is delivered by the gas delivery system. The post deposition purge gas that is delivered by the gas delivery system includes a molecular reactant gas.

Abstract: A Data Storage Device (DSD) includes a Non-Volatile Memory (NVM) for storing data, a network interface for communicating on a network, and a processor. According to one aspect, a command is received via the network interface for storing data in the NVM or retrieving data from the NVM. Based on a transport attribute of the command, it is determined whether to execute a file interface for accessing files stored in the NVM or an object interface for accessing data objects stored in the NVM. According to another aspect, computer-executable instructions are received from a device via the network interface and the computer-executable instructions are executed using an off-load interface. The computer-executable instructions cause the processor to transform data stored in the NVM or data received from the network and send the transformed data to another device on the network or store the transformed data in the NVM.

Abstract: A Data Storage Device (DSD) includes a Non-Volatile Memory (NVM) for storing data and a first processor configured to execute a firmware for retrieving data from the NVM and storing data in the NVM. A second processor of the DSD executes an application Operating System (OS) to interface with the first processor. The second processor sends a command to the first processor using the application OS to retrieve data from the NVM or store data in the NVM.

Abstract: The present invention provides high deposition rate PECVD methods for depositing TEOS films. The methods significantly reduce the number of particles in the TEOS films, thereby eliminating or minimizing defects. According to various embodiments, the methods involve adding a relatively small amount of helium gas to the process gas. The addition of helium significantly reduces the number of defects in the film, particularly for high deposition rate processes.