Abstract: A method of controlling surface non-uniformity of a wafer in a polishing operation includes (a) providing a model for a wafer polishing that defines a plurality of regions on a wafer and identifies a wafer material removal rate in a polishing step of a polishing process for each of the regions, wherein the polishing process comprises a plurality of polishing steps, (b) polishing a wafer using a first polishing recipe based upon an incoming wafer thickness profile, (c) determining a wafer thickness profile for the post-polished wafer of step (b), and (d) calculating an updated polishing recipe based upon the wafer thickness profile of step (c) and the model of step (a) to maintain a target wafer thickness profile. The model can information about the tool state to improve the model quality. The method can be used to provide feedback to a plurality of platen stations.

Abstract: A method of controlling surface non-uniformity of a wafer in a polishing operation includes (a) providing a model for a wafer polishing that defines a plurality of regions on a wafer and identifies a wafer material removal rate in a polishing step of a polishing process for each of the regions, wherein the polishing process comprises a plurality of polishing steps, (b) polishing a wafer using a first polishing recipe based upon an incoming wafer thickness profile, (c) determining a wafer thickness profile for the post-polished wafer of step (b), and (d) calculating an updated polishing recipe based upon the wafer thickness profile of step (c) and the model of step (a) to maintain a target wafer thickness profile. The model can information about the tool state to improve the model quality. The method can be used to provide feedback to a plurality of platen stations.

Abstract: A method of controlling surface non-uniformity of a wafer in a polishing operation includes (a) providing a model for a wafer polishing that defines a plurality of regions on a wafer and identifies a wafer material removal rate in a polishing step of a polishing process for each of the regions, wherein the polishing process comprises a plurality of polishing steps, (b) polishing a wafer using a first polishing recipe based upon an incoming wafer thickness profile, (c) determining a wafer thickness profile for the post-polished wafer of step (b), and (d) calculating an updated polishing recipe based upon the wafer thickness profile of step (c) and the model of step (a) to maintain a target wafer thickness profile. The model can information about the tool state to improve the model quality. The method can be used to provide feedback to a plurality of platen stations.

Abstract: A method, system, and medium of modeling and/or for controlling a manufacturing process is disclosed. The method includes the steps of identifying one or more input parameters that cause a change in output characteristics, defining global nodes using estimated maximum and minimum values of the input parameters, and defining a mathematical equation that calculates a predicted output characteristic for each node. The method also includes the steps of receiving at least one empirical data point having one or more input parameter values and at least one empirical output value and adjusting the predicted output values at the nodes based on a difference between the at least one empirical output value and the predicted output characteristic calculated using the mathematical equation based on the one or more input parameter values.

Abstract: A method, system, and medium of modeling and/or for controlling a manufacturing process is disclosed. In particular, a method according to embodiments of the present invention includes calculating a set of predicted output values, and obtaining a prediction model based on a set of input parameters, the set of predicted output values, and empirical output values. Each input parameter causes a change in at least two outputs. The method also includes optimizing the prediction model by minimizing differences between the set of predicted output values and the empirical output values, and adjusting the set of input parameters to obtain a set of desired output values to control the manufacturing apparatus. Obtaining the prediction model includes transforming the set of input parameters into transformed input values using a transformation function of multiple coefficient values, and calculating the predicted output values using the transformed input values.

Abstract: Systems, methods and mediums are provided for dynamic adjustment of sampling plans in connection with a wafer (or other device) to be measured. The invention adjusts the frequency and/or spatial resolution of measurements on an as-needed basis when one or more events occur that are likely to indicate an internal or external change affecting the manufacturing process or results. The dynamic metrology plan adjusts the spatial resolution of sampling within-wafer by adding, subtracting or replacing candidate points from the sampling plan, in response to certain events which suggest that additional or different measurements of the wafer may be desirable. Further, the invention may be used in connection with adjusting the frequency of wafer-to-wafer measurements.

Abstract: Systems, methods and mediums are provided for dynamic adjustment of sampling plans in connection with a wafer (or other device) to be measured. The invention adjusts the frequency and/or spatial resolution of measurements on an as-needed basis when one or more events occur that are likely to indicate an internal or external change affecting the manufacturing process or results. The dynamic metrology plan adjusts the spatial resolution of sampling within-wafer by adding, subtracting or replacing candidate points from the sampling plan, in response to certain events which suggest that additional or different measurements of the wafer may be desirable. Further, the invention may be used in connection with adjusting the frequency of wafer-to-wafer measurements.

Abstract: Systems, methods and mediums are provided for dynamic adjustment of sampling plans in connection with a wafer (or other device) to be measured. A sampling plan provides information on specific measure points within a die, a die being the section on the wafer that will eventually become a single chip after processing. There are specified points within the die that are candidates for measuring. The stored die map information may be retrieved and translated to determine the available points for measurement on the wafer. The invention adjusts the frequency and/or spatial resolution of measurements when one or more events occur that are likely to indicate an internal or external change affecting the manufacturing process or results. The increase in measurements and possible corresponding decrease in processing occur on an as-needed basis.

Abstract: A method, system, and medium of modeling and/or for controlling a manufacturing process is disclosed. The method includes the steps of identifying one or more input parameters that cause a change in output characteristics, defining global nodes using estimated maximum and minimum values of the input parameters, and defining a mathematical equation that calculates a predicted output characteristic for each node. The method also includes the steps of receiving at least one empirical data point having one or more input parameter values and at least one empirical output value and adjusting the predicted output values at the nodes based on a difference between the at least one empirical output value and the predicted output characteristic calculated using the mathematical equation based on the one or more input parameter values.

Abstract: A method, system, and medium of modeling and/or for controlling a manufacturing process is disclosed. The method includes the steps of identifying one or more input parameters that cause a change in output characteristics, defining global nodes using estimated maximum and minimum values of the input parameters, and defining a mathematical equation that calculates a predicted output characteristic for each node. The method also includes the steps of receiving at least one empirical data point having one or more input parameter values and at least one empirical output value and adjusting the predicted output values at the nodes based on a difference between the at least one empirical output value and the predicted output characteristic calculated using the mathematical equation based on the one or more input parameter values.

Abstract: Systems, methods and mediums are provided for dynamic adjustment of sampling plans in connection with a wafer (or other device) to be measured. The invention adjusts the frequency and/or spatial resolution of measurements on an as-needed basis when one or more events occur that are likely to indicate an internal or external change affecting the manufacturing process or results. The dynamic metrology plan adjusts the spatial resolution of sampling within-wafer by adding, subtracting or replacing candidate points from the sampling plan, in response to certain events which suggest that additional or different measurements of the wafer may be desirable. Further, the invention may be used in connection with adjusting the frequency of wafer-to-wafer measurements.

Abstract: Semiconductor wafers are processed in conjunction with a manufacturing execution system using a run-to-run controller and a fault detection system. A recipe is received from the manufacturing execution system by the run-to-run controller for controlling a tool. The recipe includes a setpoint for obtaining one or more target wafer properties. Processing of the wafers is monitored by measuring processing attributes including fault conditions and wafer properties using the fault detection system and one or more sensors. Setpoints of the recipe may be modified at the run-to-run controller according to the processing attributes to maintain the target wafer properties, except in cases when a fault condition is detected by the fault detection system. Thus, data acquired in the presence of tool or wafer fault conditions are not used for feedback purposes. In addition, fault detection models may be used to define a range of conditions indicative of a fault condition.

Abstract: A method, system, and medium of modeling and/or for controlling a manufacturing process is disclosed. In particular, a method according to embodiments of the present invention includes the step of identifying one or more input parameters. Each input parameter causes a change in at least two outputs. The method also includes the step of storing values of the identified inputs and corresponding empirical output values along with predicted output values. The predicted output values are calculated based on, in part, the values of the identified inputs. The method also includes the step of calculating a set of transform coefficients by minimizing a score equation that is a function of differences between one or more of the empirical output values and their corresponding predicted output values.

Abstract: A method of film deposition in a sub-atmospheric chemical vapor deposition (CVD) process includes (a) providing a model for sub-atmospheric CVD deposition of a film that identifies one or more film properties of the film and at least one deposition model variable that correlates with the one or more film properties; (b) depositing a film onto a wafer using a first deposition recipe comprising at least one deposition recipe parameter that corresponds to the at least one deposition variable; (c) measuring a film property of at least one of said one or more film properties for the deposited film of step (b); (d) calculating an updated deposition model based upon the measured film property of step (c) and the model of step (a); and (e) calculating an updated deposition recipe based upon the updated model of step (d) to maintain a target film property. The method can be used to provide feedback to a plurality of deposition chambers or to control a film property other than film thickness.

Abstract: A method of controlling surface non-uniformity of a wafer in a polishing operation includes (a) providing a model for a wafer polishing that defines a plurality of regions on a wafer and identifies a wafer material removal rate in a polishing step of a polishing process for each of the regions, wherein the polishing process comprises a plurality of polishing steps, (b) polishing a wafer using a first polishing recipe based upon an incoming wafer thickness profile, (c) determining a wafer thickness profile for the post-polished wafer of step (b), and (d)calculating an updated polishing recipe based upon the wafer thickness profile of step (c) and the model of step (a) to maintain a target wafer thickness profile. The model can information about the tool state to improve the model quality. The method can be used to provide feedback to a plurality of platen stations.

Abstract: The invention relates to a method, system and computer program useful for producing a product, such as a microelectronic device, for example in an assembly line, where the production facility includes parallel production of assembly lines of products on identically configured chambers, tools and/or modules. Control is provided between such chambers. Behaviors of a batch of wafers (or of each wafer) are collected as the first batch (or each wafer) is processed by one of the identically configured chambers in one assembly line to produce the microelectronic device. The information relating to the behavior is shared with a controller of another one (or more) of the identically configured chambers, process tools and/or modules, to provide an adjustment of the process tool and thereby to produce a second batch (or next wafer) which is substantially identical, within tolerance, to the first batch (or wafer).

Abstract: Semiconductor wafers are processed in a fab in a manner that integrates control at multiple functional unit levels. Examples of functional units include fabs, modules, tools, and the like. Initially, a number of functional unit property targets are received at a functional unit. The functional unit property targets are utilized to generate a number of tool targets for any number of tool level functional units. From there, the tool targets are forwarded to the corresponding tool level functional units. At these tool level functional units, a number of tool recipes, each of which define a number of process setpoints, may be generated by processing the tool targets. The process setpoints define a number of parameters which must be satisfied in order to attain the corresponding tool targets. In addition, in at least some embodiments, the tool targets and tool recipes are determined utilizing feedback information including functional unit states and measurements of controlled parameters.

Abstract: A system, method and medium of controlling a semiconductor manufacturing tool using a feedback control mechanism. The feedback control mechanism includes features for receiving data points relating to an output of the tool. The data points include a current data point and at least one previous data point. The feedback control mechanism also includes features for determining whether the current data point is an erroneous outlier by comparing the current data point to a statistical representation of the at least one previous data point, and based on whether the at least one previous data point is an outlier. The feedback control mechanism further includes features for disregarding the current data point in calculating a feedback value of the feedback control mechanism if the current data point is determined as an erroneous outlier.

Abstract: A method of film deposition in a chemical vapor deposition (CVD) process includes (a) providing a model for CVD deposition of a film that defines a plurality of regions on a wafer and identifies one or more film properties for at least two regions of the wafer and at least one deposition model variable that correlates with the one or more film properties; (b) depositing a film onto a wafer using a first deposition recipe comprising at least one deposition recipe parameter that corresponds to the at least one deposition variable; (c) measuring a film property of at least one of the one or more film properties for the deposited film of step (b) for each of the at least two regions of the wafer and determining a film property; (d) calculating an updated deposition model based upon the film property of step (c) and the model of step (a); and (e) calculating an updated deposition recipe based upon the updated model of step (d) to maintain a target film property.

Abstract: A method, system, and medium of modeling and/or for controlling a manufacturing process is disclosed. In particular, a method according to embodiments of the present invention includes the step of identifying one or more input parameters. Each input parameter causes a change in at least two outputs. The method also includes the step of storing values of the identified inputs and corresponding empirical output values along with predicted output values. The predicted output values are calculated based on, in part, the values of the identified inputs. The method also includes the step of calculating a set of transform coefficients by minimizing a score equation that is a function of differences between one or more of the empirical output values and their corresponding predicted output values.