Abstract: Data stored in SRAM cells are periodically flipped e.g., before long idle periods. Operating the memories in both a ‘flipped’ mode and a ‘non-flipped’ mode helps cause the Bias Temperature Instability (BTI) degradation to be symmetric, thereby not degrading the Static Noise Margin (SNM) degradation of the cells. The data stored in memory locations is flipped by reading out the data, inverting the read out data, and writing the inverted read out data into the memory locations until the memory locations of the SRAM have been read out and written. When the memory operates in flipped mode, data read from and written into the memory is inverted to maintain transparency to the memory user. After operating the data in flipped mode for a period of time, the flipped data stored in the memory is reflipped to operate in the non-flipped mode.

Abstract: A method is provided in which a first error test may be performed on a memory that includes an integrated error correcting code (ECC) portion. The functionality of the ECC portion may be bypassed in the first error test. A second error test may be performed on the memory, where the second error test includes testing the functionality of the ECC portion. Also provided is an apparatus including a memory device and an error correcting code (ECC) circuit. The apparatus also includes a first switching device adapted to select a first input signal or a second input signal and a second switching device adapted to select one of a signal from the memory device or a signal from a portion of the ECC circuit. Also provided are computer readable storage devices encoded with data for adapting a manufacturing facility to create the apparatus and for adapting a processor to perform the method above.

Abstract: Data stored in SRAM cells are periodically flipped e.g., before long idle periods. Operating the memories in both a ‘flipped’ mode and a ‘non-flipped’ mode helps cause the Bias Temperature Instability (BTI) degradation to be symmetric, thereby not degrading the Static Noise Margin (SNM) degradation of the cells. The data stored in memory locations is flipped by reading out the data, inverting the read out data, and writing the inverted read out data into the memory locations until the memory locations of the SRAM have been read out and written. When the memory operates in flipped mode, data read from and written into the memory is inverted to maintain transparency to the memory user. After operating the data in flipped mode for a period of time, the flipped data stored in the memory is reflipped to operate in the non-flipped mode.

Abstract: Power gating control and related circuitry for integrated circuits is described herein. A centralized power gating control circuit uses trigger circuits to control the on/off switching of power gating circuits distributed at different points in a chip, integrated circuit, module or block (collectively “IC”). The power gating circuits may include power gates partitioned for sleep and shutdown modes. The shutdown mode power gates may employ multi-level power gate architecture to minimize inrush current during power-up of the IC. Each level may be associated with or tied to a trigger circuit and activated based on a voltage level reaching the voltage threshold of the trigger circuit. The power gating control and related circuitry may be embedded in the IC.

Abstract: Power gating control and related circuitry for integrated circuits is described herein. A centralized power gating control circuit uses trigger circuits to control the on/off switching of power gating circuits distributed at different points in a chip, integrated circuit, module or block (collectively “IC”). The power gating circuits may include power gates partitioned for sleep and shutdown modes. The shutdown mode power gates may employ multi-level power gate architecture to minimize inrush current during power-up of the IC. Each level may be associated with or tied to a trigger circuit and activated based on a voltage level reaching the voltage threshold of the trigger circuit. The power gating control and related circuitry may be embedded in the IC.

Abstract: A method is provided in which a first error test may be performed on a memory that includes an integrated error correcting code (ECC) portion. The functionality of the ECC portion may be bypassed in the first error test. A second error test may be performed on the memory, where the second error test includes testing the functionality of the ECC portion. Also provided is an apparatus including a memory device and an error correcting code (ECC) circuit. The apparatus also includes a first switching device adapted to select a first input signal or a second input signal and a second switching device adapted to select one of a signal from the memory device or a signal from a portion of the ECC circuit. Also provided are computer readable storage devices encoded with data for adapting a manufacturing facility to create the apparatus and for adapting a processor to perform the method above.