Abstract: Anion antisite defects in monolayer Transition Metal Dichalcogenide (TMD) systems are here identified as two-dimen-sional solid-state defect qubits. The proposed antisites in these TMDs host paramagnetic triplet ground states with flexible level splitting. A viable transition loop between the triplet and singlet defect states is demonstrated, including optical excitations/relaxations and nonradiative decay paths for the antisites as qubits. A complete set of qubit operational processes, including initialization, manipulation, and readout, is delineated.

Abstract: Heterocrystals of metal dichalcogenides and Bi2S3, Bi2Se3 or Bi2Te3 are presented, in which the metal dichalcogenides and Bi2S3, Bi2Se3 or Bi2Te3 do not largely retain their independent properties. These heterocrystals exhibit electronic and optical changes, which make them attractive for beyond-silicon electronics and optoelectronics. Particularly, these heterocrystals can be re-configured in a manner that allows bit writing and pattern drawing. Embodiments of these heterocrystals, methods of forming these heterocrystals, methods of reconfiguring the heterocrystals, information storage devices, optoelectronic circuits and photonic crystals are presented.

Abstract: Heterocrystals of metal dichalcogenides and Bi2S3, Bi2Se3 or Bi2Te3 are presented, in which the metal dichalcogenides and Bi2S3, Bi2Se3 or Bi2Te3 do not largely retain their independent properties. These heterocrystals exhibit electronic and optical changes, which make them attractive for beyond-silicon electronics and optoelectronics. Particularly, these heterocrystals can be re-configured in a manner that allows bit writing and pattern drawing. Embodiments of these heterocrystals, methods of forming these heterocrystals, methods of reconfiguring the heterocrystals, information storage devices, optoelectronic circuits and photonic crystals are presented.

Abstract: Transition metal dichalcogenide (TMD)-based spintronics devices, each including a TMD thin film layer, a first gate electrode, a first insulating layer sandwiched between the TMD thin film layer and the first gate electrode, a second gate electrode, and a second insulating layer sandwiched between the TMD thin film layer and the second gate electrode. Such a device, when also including a source electrode and a drain electrode, functions as a spin filter. On the other hand, when also including one source electrode and two drain electrode terminals, such a device functions as a spin separator. Also disclosed are methods of using the above-described TMD-based spintronics devices.

Abstract: Provided in one embodiment is a device, comprising: a substrate; and a layer disposed over the substrate, wherein the layer comprises a monolayer of crystals comprising a Group IV element.

Abstract: Provided in one embodiment is a device, comprising: a substrate; and a layer disposed over the substrate, wherein the layer comprises a monolayer of crystals comprising a Group IV element.

Abstract: The present application relates to methods of determining a concentration of an element, such as lithium, using analysis of a Compton scattering spectrum's lineshape.