Patents by Inventor Arun Persaud
Arun Persaud has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220135409Abstract: This disclosure provides systems, methods, and apparatus related to color centers. In one aspect, a method includes providing diamond doped with a dopant. A heavy-ion is directed to the diamond that passes through the diamond. The heavy-ion forms a line of dopant-vacancy centers as it passes through the diamond.Type: ApplicationFiled: October 25, 2021Publication date: May 5, 2022Inventors: Thomas Schenkel, Arun Persaud, Edward Barnard
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Publication number: 20210151206Abstract: An apparatus and method for sourcing nuclear fusion products uses an electrochemical loading process to load low-kinetic-energy (low-k) light element particles into a target electrode, which comprises a light-element-absorbing material (e.g., Palladium). An electrolyte solution containing the low-k light element particles is maintained in contact with a backside surface of the target electrode while a bias voltage is applied between the target electrode and an electrochemical anode, thereby causing low-k light element particles to diffuse from the backside surface to an opposing frontside surface of the target electrode. High-kinetic-energy (high-k) light element particles are directed against the frontside, thereby causing fusion reactions each time a high-k light element particle operably collides with a low-k light element particle disposed on the frontside surface. Fusion reaction rates are controlled by adjusting the bias voltage.Type: ApplicationFiled: March 2, 2020Publication date: May 20, 2021Inventors: Thomas Schenkel, Ross Koningstein, Peter Seidl, Arun Persaud, Qing Ji, David K. Fork, Matthew D. Trevithick, Curtis Berlinguette, Philip A. Schauer, Benjamin P. MacLeod
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Patent number: 10912184Abstract: A wafer-based charged particle accelerator includes a charged particle source and at least one RF charged particle accelerator wafer sub-assembly and a power supply coupled to the at least one RF charged particle accelerator wafer sub-assembly. The wafer-based charged particle accelerator may further include a beam current-sensor. The wafer-based charged particle accelerator may further include at least a second RF charged particle accelerator wafer sub-assembly and at least one ESQ charged particle focusing wafer. Fabrication methods are disclosed for RF charged particle accelerator wafer sub-assemblies, ESQ charged particle focusing wafers, and the wafer-based charged particle accelerator.Type: GrantFiled: August 12, 2019Date of Patent: February 2, 2021Assignee: Cornell UniversityInventors: Amit Lal, Thomas Schenkel, Arun Persaud, Qing Ji, Peter Seidl, Will Waldron, Serhan Ardanuc, Vinaya Kumar Kadayra Basavarajappa
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Publication number: 20200187344Abstract: A wafer-based charged particle accelerator includes a charged particle source and at least one RF charged particle accelerator wafer sub-assembly and a power supply coupled to the at least one RF charged particle accelerator wafer sub-assembly. The wafer-based charged particle accelerator may further include a beam current-sensor. The wafer-based charged particle accelerator may further include at least a second RF charged particle accelerator wafer sub-assembly and at least one ESQ charged particle focusing wafer. Fabrication methods are disclosed for RF charged particle accelerator wafer sub-assemblies, ESQ charged particle focusing wafers, and the wafer-based charged particle accelerator.Type: ApplicationFiled: August 12, 2019Publication date: June 11, 2020Applicant: Cornell UniversityInventors: Amit Lal, Thomas Schenkel, Arun Persaud, Qing Ji, Peter Seidl, Will Waldron, Serhan Ardanuc, Vinaya Kumar Kadayra Basavarajappa
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Patent number: 10383205Abstract: A wafer-based charged particle accelerator includes a charged particle source and at least one RF charged particle accelerator wafer sub-assembly and a power supply coupled to the at least one RF charged particle accelerator wafer sub-assembly. The wafer-based charged particle accelerator may further include a beam current-sensor. The wafer-based charged particle accelerator may further include at least a second RF charged particle accelerator wafer sub-assembly and at least one ESQ charged particle focusing wafer. Fabrication methods are disclosed for RF charged particle accelerator wafer sub-assemblies, ESQ charged particle focusing wafers, and the wafer-based charged particle accelerator.Type: GrantFiled: May 4, 2017Date of Patent: August 13, 2019Assignee: Cornell UniversityInventors: Amit Lal, Thomas Schenkel, Arun Persaud, Qing Ji, Peter Seidl, Will Waldron, Serhan Ardanuc, Vinaya Kumar Kadayra Basavarajappa
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Publication number: 20190159331Abstract: A wafer-based charged particle accelerator includes a charged particle source and at least one RF charged particle accelerator wafer sub-assembly and a power supply coupled to the at least one RF charged particle accelerator wafer sub-assembly. The wafer-based charged particle accelerator may further include a beam current-sensor. The wafer-based charged particle accelerator may further include at least a second RF charged particle accelerator wafer sub-assembly and at least one ESQ charged particle focusing wafer. Fabrication methods are disclosed for RF charged particle accelerator wafer sub-assemblies, ESQ charged particle focusing wafers, and the wafer-based charged particle accelerator.Type: ApplicationFiled: May 4, 2017Publication date: May 23, 2019Applicant: CORNELL UNIVERSITYInventors: Amit Lal, Thomas Schenkel, Arun Persaud, Qing JI, Peter Seidl, Will Waldron, Serhan Ardanuc, Vinaya Kumar Kadayra Basavarajappa
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Patent number: 9484176Abstract: This disclosure provides systems, methods, and apparatus for ion generation. In one aspect, an apparatus includes an anode, a first cathode, a second cathode, and a plurality of cusp magnets. The anode has a first open end and a second open end. The first cathode is associated with the first open end of the anode. The second cathode is associated with the second open end of the anode. The anode, the first cathode, and the second cathode define a chamber. The second cathode has an open region configured for the passage of ions from the chamber. Each cusp magnet of the plurality of cusp magnets is disposed along a length of the anode.Type: GrantFiled: September 4, 2013Date of Patent: November 1, 2016Inventors: Thomas Schenkel, Qing Ji, Arun Persaud, Amy V. Sy
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Patent number: 9161429Abstract: A neutron generator includes a conductive substrate comprising a plurality of conductive nanostructures with free-standing tips and a source of an atomic species to introduce the atomic species in proximity to the free-standing tips. A target placed apart from the substrate is voltage biased relative to the substrate to ionize and accelerate the ionized atomic species toward the target. The target includes an element capable of a nuclear fusion reaction with the ionized atomic species to produce a one or more neutrons as a reaction by-product.Type: GrantFiled: April 19, 2012Date of Patent: October 13, 2015Assignee: The Regents of the University of CaliforniaInventors: Thomas Schenkel, Arun Persaud, Rehan Kapadia, Ali Javey, Constance Chang-Hasnain, Ivo Rangelow, Joe Kwan
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Patent number: 8709350Abstract: An ion source includes a conductive substrate, the substrate including a plurality of conductive nanostructures with free-standing tips formed on the substrate. A conductive catalytic coating is formed on the nanostructures and substrate for dissociation of a molecular species into an atomic species, the molecular species being brought in contact with the catalytic coating. A target electrode placed apart from the substrate, the target electrode being biased relative to the substrate with a first bias voltage to ionize the atomic species in proximity to the free-standing tips and attract the ionized atomic species from the substrate in the direction of the target electrode.Type: GrantFiled: April 19, 2012Date of Patent: April 29, 2014Assignee: The Regents of the University of CaliforniaInventors: Thomas Schenkel, Arun Persaud, Rehan Kapadia, Ali Javey
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Publication number: 20140070701Abstract: This disclosure provides systems, methods, and apparatus for ion generation. In one aspect, an apparatus includes an anode, a first cathode, a second cathode, and a plurality of cusp magnets. The anode has a first open end and a second open end. The first cathode is associated with the first open end of the anode. The second cathode is associated with the second open end of the anode. The anode, the first cathode, and the second cathode define a chamber. The second cathode has an open region configured for the passage of ions from the chamber. Each cusp magnet of the plurality of cusp magnets is disposed along a length of the anode.Type: ApplicationFiled: September 4, 2013Publication date: March 13, 2014Applicant: The Regents of the University of CaliforniaInventors: Thomas Schenkel, Qing Ji, Arun Persaud, Amy V. Sy
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Publication number: 20130044846Abstract: A neutron generator includes a conductive substrate comprising a plurality of conductive nanostructures with free-standing tips and a source of an atomic species to introduce the atomic species in proximity to the free-standing tips. A target placed apart from the substrate is voltage biased relative to the substrate to ionize and accelerate the ionized atomic species toward the target. The target includes an element capable of a nuclear fusion reaction with the ionized atomic species to produce a one or more neutrons as a reaction by-product.Type: ApplicationFiled: April 19, 2012Publication date: February 21, 2013Applicant: Regents of the University of CaliforniaInventors: Thomas Schenkel, Arun Persaud, Rehan Kapadia, Ali Javey, Constance Chang-Hasnain, Ivo Rangelow, Joe Kwan
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Publication number: 20120273342Abstract: An ion source includes a conductive substrate, the substrate including a plurality of conductive nanostructures with free-standing tips formed on the substrate. A conductive catalytic coating is formed on the nanostructures and substrate for dissociation of a molecular species into an atomic species, the molecular species being brought in contact with the catalytic coating. A target electrode placed apart from the substrate, the target electrode being biased relative to the substrate with a first bias voltage to ionize the atomic species in proximity to the free-standing tips and attract the ionized atomic species from the substrate in the direction of the target electrode.Type: ApplicationFiled: April 19, 2012Publication date: November 1, 2012Applicant: Regents of the University of CaliforniaInventors: Thomas Schenkel, Arun Persaud, Rehan Kapadia, Ali Javey
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Patent number: 6768120Abstract: An electron beam system is based on a plasma generator in a plasma ion source with an accelerator column. The electrons are extracted from a plasma cathode in a plasma ion source, e.g. a multicusp plasma ion source. The beam can be scanned in both the x and y directions, and the system can be operated with multiple beamlets. A compact focused ion or electron beam system has a plasma ion source and an all-electrostatic beam acceleration and focusing column. The ion source is a small chamber with the plasma produced by radio-frequency (RF) induction discharge. The RF antenna is wound outside the chamber and connected to an RF supply. Ions or electrons can be extracted from the source. A multi-beam system has several sources of different species and an electron beam source.Type: GrantFiled: August 30, 2002Date of Patent: July 27, 2004Assignee: The Regents of the University of CaliforniaInventors: Ka-Ngo Leung, Jani Reijonen, Arun Persaud, Qing Ji, Ximan Jiang
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Publication number: 20040036032Abstract: An electron beam system is based on a plasma generator in a plasma ion source with an accelerator column. The electrons are extracted from a plasma cathode in a plasma ion source, e.g. a multicusp plasma ion source. The beam can be scanned in both the x and y directions, and the system can be operated with multiple beamlets. A compact focused ion or electron beam system has a plasma ion source and an all-electrostatic beam acceleration and focusing column. The ion source is a small chamber with the plasma produced by radio-frequency (RF) induction discharge. The RF antenna is wound outside the chamber and connected to an RF supply. Ions or electrons can be extracted from the source. A multi-beam system has several sources of different species and an electron beam source.Type: ApplicationFiled: August 30, 2002Publication date: February 26, 2004Inventors: Ka-Ngo Leung, Jani Reijonen, Arun Persaud, Qing Ji, Ximan Jiang