Abstract: A method and a semiconductor device for incorporating defect mitigation structures are provided. The semiconductor device comprises a substrate, a defect mitigation structure comprising a combination of layers of doped or undoped group IV alloys and metal or non-metal nitrides disposed over the substrate, and a device active layer disposed over the defect mitigation structure. The defect mitigation structure is fabricated by depositing one or more defect mitigation layers comprising a substrate nucleation layer disposed over the substrate, a substrate intermediate layer disposed over the substrate nucleation layer, a substrate top layer disposed over the substrate intermediate layer, a device nucleation layer disposed over the substrate top layer, a device intermediate layer disposed over the device nucleation layer, and a device top layer disposed over the device intermediate layer.

Abstract: A method and a semiconductor device for incorporating defect mitigation structures are provided. The semiconductor device comprises a substrate, a defect mitigation structure comprising a combination of layers of doped or undoped group IV alloys and metal or non-metal nitrides disposed over the substrate, and a device active layer disposed over the defect mitigation structure. The defect mitigation structure is fabricated by depositing one or more defect mitigation layers comprising a substrate nucleation layer disposed over the substrate, a substrate intermediate layer disposed over the substrate nucleation layer, a substrate top layer disposed over the substrate intermediate layer, a device nucleation layer disposed over the substrate top layer, a device intermediate layer disposed over the device nucleation layer, and a device top layer disposed over the device intermediate layer.

Abstract: Embodiments of the present invention relate to fabricating low cost polysilicon solar cell on flexible substrates using inkjet printing. Particular embodiments form polycrystalline or microcrystalline silicon solar cells on substrates utilizing liquid silane, by employing inkjet printing or other low cost commercial printing techniques including but not limited to screen printing, roller coating, gravure coating, curtain coating, spray coating and others. Specific embodiments employ silanes such as cyclopentasilane (C5H10) or cyclohexasilane (C6H12), which are liquids at room temperature but undergo a ring opening chemical reaction upon exposure to radiation of a wavelength of ultraviolet (UV) or shorter. . Opening of the rings of the liquid silane converts it into a polymerized material comprising saturated and unsaturated silicon chains of varied length. Heating to approximately 250-400° C. converts these materials into a hydrogenated amorphous silicon film.

Abstract: Erosion of material in an electrode in a plasma-produced extreme ultraviolet (EUV) light source may be reduced by treating the surface of the electrode. Grooves may be provided in the electrode surface to increase re-deposition of electrode material in the grooves. The electrode surface may be coated with a porous material to reduce erosion due to brittle destruction. The electrode surface may be coated with a pseudo-alloy to reduce erosion from surface waves caused by the plasma in molten material on the surface of the electrode.

Abstract: A magnetic and/or electric field may be generated around collector optics in an EUV lithography system to deflect debris particles from the reflective surfaces of the optics. The magnetic and/or electric field may be generated by a solenoid structure around the optics or by passing current through inner an outer shells in a nested shell arrangement.

Abstract: A reticle carrier for an Extreme Ultraviolet (EUV) reticle may include nested grids of electret fibers to provide active protection from contamination without a power supply. The reticle carrier may include in-line sensors for in-situ monitoring of contamination. Grids of electret fibers may also be used in an EUV pellicle.

Abstract: A reticle carrier for an Extreme Ultraviolet (EUV) reticle may include nested grids of electret fibers to provide active protection from contamination without a power supply. The reticle carrier may include in-line sensors for in-situ monitoring of contamination. Grids of electret fibers may also be used in an EUV pellicle.

Abstract: Apparatus and methods to protect a photomask that is used for semiconductor photolithography at wavelengths outside the visible spectrum include a pellicle that is readily retracted during exposure or to provide access to the photomask. The pellicle can be transparent at an inspection wavelength and opaque at an exposure wavelength. In various embodiments, the pellicle is slid, retracted, or pivoted relative to a base aligned with the photomask, thus uncovering the photomask. When overlying the photomask, the pellicle can be secured with magnetic elements, such as magnets or electromagnets. In another embodiment, the pellicle includes a diaphragm having a plurality of shutter leaves that can be opened or closed. Methods of using a pellicle are also described.

Abstract: A method including placing a wafer active side down in a chamber and reducing the pressure in the chamber. An apparatus or system including a chamber having an interior volume suitable to accommodate a semiconductor wafer and capable of maintaining a vacuum; and a support to maintain a wafer in the volume of the chamber with minimum or no contact with an active side of the wafer, wherein an amount of particles that an active side of a wafer is exposed to during a pressure change in the chamber is minimized when the wafer is loaded in the chamber in an active side down configuration.

Abstract: A reticle carrier for an Extreme Ultraviolet (EUV) reticle may include nested grids of electret fibers to provide active protection from contamination without a power supply. The reticle carrier may include in-line sensors for in-situ monitoring of contamination. Grids of electret fibers may also be used in an EUV pellicle.

Abstract: A magnetic and/or electric field may be generated around collector optics in an EUV lithography system to deflect debris particles from the reflective surfaces of the optics. The magnetic and/or electric field may be generated by a solenoid structure around the optics or by passing current through inner an outer shells in a nested shell arrangement.

Abstract: Erosion of material in an electrode in a plasma-produced extreme ultraviolet (EUV) light source may be reduced by treating the surface of the electrode. Grooves may be provided in the electrode surface to increase re-deposition of electrode material in the grooves. The electrode surface may be coated with a porous material to reduce erosion due to brittle destruction. The electrode surface may be coated with a pseudo-alloy to reduce erosion from surface waves caused by the plasma in molten material on the surface of the electrode.

Abstract: Apparatus and methods to protect a photomask that is used for semiconductor photolithography at wavelengths outside the visible spectrum include a pellicle that is readily retracted during exposure or to provide access to the photomask. The pellicle can be transparent at an inspection wavelength and opaque at an exposure wavelength. In various embodiments, the pellicle is slid, retracted, or pivoted relative to a base aligned with the photomask, thus uncovering the photomask. When overlying the photomask, the pellicle can be secured with magnetic elements, such as magnets or electromagnets. In another embodiment, the pellicle includes a diaphragm having a plurality of shutter leaves that can be opened or closed. Methods of using a pellicle are also described.

Abstract: Apparatus and methods to protect a photomask that is used for semiconductor photolithography at wavelengths outside the visible spectrum include a pellicle that is readily retracted during exposure or to provide access to the photomask. The pellicle can be transparent at an inspection wavelength and opaque at an exposure wavelength. In various embodiments, the pellicle is slid, retracted, or pivoted relative to a base aligned with the photomask, thus uncovering the photomask. When overlying the photomask, the pellicle can be secured with magnetic elements, such as magnets or electromagnets. In another embodiment, the pellicle includes a diaphragm that can be opened or closed. Methods of using a pellicle are also described.

Abstract: A reticle carrier used in semiconductor manufacture. The carrier includes a bottom cover and a top cover having a transparent window. A protective lid may also be included. The box includes ports to allow nitrogen gas to enter and purge the inside. The transparent window is used for inspection and photochemical clean. However, since no material is available which can suitably handle smaller wavelength radiation, the reticle is removed from the carrier when exposure at these wavelengths is required.

Abstract: Testing of a mask which is intended to be used for low wavelength lithography. At lower wavelengths, e.g., 157 nm, certain contaminants may become visible, even though they were transparent under visible or ultraviolet light. A combination of Raman spectroscopy and infrared absorption spectroscopy are used to identify the contaminants.

Abstract: A reticle carrier used in semiconductor manufacture. The carrier includes a bottom cover and a top cover having a transparent window. A protective lid may also be included. The box includes ports to allow nitrogen gas to enter and purge the inside. The transparent window is used for inspection and photochemical clean. However, since no material is available which can suitably handle smaller wavelength radiation, the reticle is removed from the carrier when exposure at these wavelengths is required.

Abstract: Apparatus and methods to protect a photomask that is used for semiconductor photolithography at wavelengths outside the visible spectrum include a pellicle that is readily retracted during exposure or to provide access to the photomask. The pellicle can be transparent at an inspection wavelength and opaque at an exposure wavelength. In various embodiments, the pellicle is slid, retracted, or pivoted relative to a base aligned with the photomask, thus uncovering the photomask. When overlying the photomask, the pellicle can be secured with magnetic elements, such as magnets or electromagnets. In another embodiment, the pellicle includes a diaphragm that can be opened or closed. Methods of using a pellicle are also described.

Abstract: Testing of a mask which is intended to be used for low wavelength lithography. At lower wavelengths, e.g., 157 nm, certain contaminants may become visible, even though they were transparent under visible or ultraviolet light. A combination of Raman spectroscopy and infrared absorption spectroscopy are used to identify the contaminants.