Abstract: A device and a method of forming the device, includes selective area deposition of a ferromagnetic material on a substrate,.

Abstract: A device and a method of forming the device, includes selective area deposition of a ferromagnetic material on a substrate.

Abstract: A structure includes a metal nitride film of the form MN, where M is selected from the group consisting of Ga, In, AlGa, AlIn, and AlGaIn. The structure has at least one electrically conductive metal region that is formed within and from the metal nitride film by a thermal process driven by absorption of light having a predetermined wavelength. Single films comprised of AlN are also within the scope of this invention, wherein an Al trace or interconnect is formed by laser radiation of wavelength 248 nm so as to contact circuitry that exists under the film. Multilayered stacks of films are also within the scope of the teachings of this invention.

Abstract: A storage media for storing information having a substrate. The substrate has an upper surface and a molecular weight greater than 5,000. Preferably the material is a polymer. The material has a plurality of piles of molecular chains in selected areas formed by pushing the molecular chains of the material on its upper surface to the selected area mechanically with a mechanical tool. The piles represent written information. The mechanical tool is preferably an atomic force microscope. Another aspect of the present invention is a method for storing information having the steps of selecting a material substrate having an upper surface and pushing molecules on the upper surface into a molecular pile at selected locations.

Abstract: A process for cheaply fabricating a substantially single crystal or a polycrystalline semiconductor structure on a host substrate. The process begins by depositing a layer of wide band gap nitride material 10, such as gallium nitride, aluminum nitride and/or indium nitride, on a sapphire substrate 11. The semiconductor structure 14 is then grown on the nitride layer. Next, the host substrate 15 is attached with a bonding agent to an exposed surface area of the semiconductor structure 14. The sapphire substrate is lifted off by irradiation in which nitrogen is dissociated from the nitride layer.

Abstract: A storage device and a method of forming a storage device, includes depositing a metal layer on a substrate, and oxidizing the metal layer to form an oxide with a rutile structure on which a ferromagnetic material is selectively grown. The substrate may be substantially formed of either SiO.sub.2, Si.sub.3 N.sub.4, or a compound of SiO.sub.2 and Si.sub.3 N.sub.4. In another method, a method of forming a magnetic device, includes one of seeding a surface with one of Ti, Sn, and Ru islands having nanometer dimensions, and by exposing nanometer scale areas of the one of Ti, Sn, and Ru on a substrate, and coating the one of Ti, Sn, and Ru, with a ferromagnetic material. The surface may be substantially formed of either SiO.sub.2, Si.sub.3 N.sub.4, or a compound of SiO.sub.2 and Si.sub.3 N.sub.4. Similarly, the substrate may be substantially formed of either SiO.sub.2, Si.sub.3 N.sub.4, or a compound of SiO.sub.2 and Si.sub.3 N.sub.4.

Abstract: A goniometer for performing scanning probe microscopy on a substrate surface is disclosed. The goniometer has a cantilever, having a cantilevered end and a supported end and a tip disposed at the cantilevered end of the cantilever. The goniometer also has a block disposed at the supported end of the cantilever. The block has at least one pair of piezoelectric layers, a pair of electrodes disposed about each individual piezoelectric layer such that varying a potential difference applied between the individual electrodes of a pair of electrodes causes the corresponding piezoelectric layer to deform, and a first insulating material disposed between the individual electrodes for insulating the individual electrodes from each other. The individual piezoelectric layers are deformed at different rates resulting in a deformity of the block and tilting of the cantilever and tip connected therewith.

Abstract: A magnetic tunneling junction cell for use in memory and logic switching applications is formed with a first ferromagnetic layer, a second ferromagnetic layer, and an insulating layer interposed between said first and second ferromagnetic layers to form a magnetic tunnel junction element. The cell further includes a write conductor which has a first conductor segment aligned in a first direction and located proximate to the first ferromagnetic layer and a second conductor segment aligned in a second direction, substantially orthogonal to the first direction and located proximate to the second ferromagnetic layer. The write conductor is terminated by a capacitive structure which allows a bidirectional current to be established in the write conductor using a monopolar write voltage and only a single port write terminal. The bidirectional current writes a high impedance state into the cell in a first current direction and a low impedance state into the cell in a second current direction.

Abstract: A storage media for storing information having a substrate. The substrate has an upper surface and a molecular weight greater than 5,000. Preferably the material is a polymer. The material has a plurality of piles of molecular chains in selected areas formed by pushing the molecular chains of the material on its upper surface to the selected area mechanically with a mechanical tool. The piles represent written information. The mechanical tool is preferably an atomic force microscope. Another aspect of the present invention is a method for storing information having the steps of selecting a material substrate having an upper surface and pushing molecules on the upper surface into a molecular pile at selected locations.

Abstract: This invention provides phase change media for optical storage based on semiconductors of nitrides of the column III metals. The surface of thin films of these wide bandgap semiconductors may be metallized (by desorption of the nitrogen) by irradiating with photons of energy equal to, or greater than the band gap of these materials, and with power densities beyond a critical threshold value. As a consequence of such writable metallization, these materials are excellent candidates for write once, read many times storage media since the differences in the reflectivity between the metal and its corresponding wide gap nitride are very large. Furthermore, once the nitrogen is desorbed, the written metallic phase can no longer revert back to the nitride phase and hence the media is stable and is truly a write-once system.

Abstract: A tri-layer thin film magnetoresistive device using doped perovskite manganate thin films as ferromagnetic elements, wherein a current is transported through the tri-layer structure, is disclosed. A large magnetoresistance change of about a factor of two is obtained in a low magnetic field, less than 150 Oe, which is close to the coercivity of the material of the elements. This device demonstrates that low-field spin-dependent transport in the manganates can be accomplished and that the magnitude of the resulting magnetoresistance is suitable for magnetoresistive field sensor applications.

Abstract: A multilayered structure comprising copper oxide perovskite material having altered superconductive properties is provided by epitaxially depositing on a substrate a layer of a first copper oxide material and then epitaxially depositing on the first layer a layer of a second, different copper oxide perovskite material. Further alternate epitaxially layers of the two copper oxide perovskite materials are then deposited one on the other. The first and second copper oxide perovskite materials in unstressed bulk states have nondistorted crystallographic lattice structures with unit cell dimensions that differ in at least one dimension. In the epitaxial layers, the crystallographic lattice structures of the two copper oxide materials are distorted relative to their nondistorted crystallographic lattice structures.

Abstract: The present invention concerns a multilayered structure comprising copper-oxide perovskite material having strained crystallographic lattices and altered superconductive properties. The multilayer structure of the invention comprises at least one first layer of a first copper-oxide material and at least one second layer of a second, different copper-oxide perovskite material. The first and second layers are adjacent to one another in an epitaxial lattice-distortion relationship. The first and second copper-oxide perovskite materials in unstressed bulk states define respectively first and second comparison nondistorted crystallographic lattice structures. The first and second comparison nondistorted crystallographic lattice structures have unit cell dimensions which differ in at least one dimension. The first copper-oxide perovskite material in the first layer has a first crystallographic lattice structure which is distorted relative to the first comparison nondistorted crystallographic lattice structure.

Abstract: Laser etching of a substrate in a liquid is accomplished by laser induced sonic cavitation at the substrate surface. The preferred substrate is laser energy absorbing and has a finite melting temperature. The preferred liquid is an organic or inorganic inert liquid which does not chemically react with the substrate at room temperature. The laser is preferably a copper vapor laser but a chopped beam cw argon ion laser or a YAG laser adjusted to a low power output sufficient to avoid the formation of a recast layer can also be used. The laser parameters are adjusted for causing the growth and collapse of bubbles at the substrate surface. The laser etching has particular application in the fabrication of rails in magnetic head sliders and dicing of Al.sub.2 O.sub.3 --TiC, TiC, SiC, Si/SiO.sub.2, and laser energy absorbing metal and metal oxides.

Abstract: A method for producing a patterned layer of high T.sub.c oxide superconductor is provided in which patterning is accomplished prior to the attainment of a superconducting state in the layer. A solution containing precursor components of the desired oxide superconductor is sprayed onto a substrate and dried to provide a layer thereon. This layer is then irradiated in selected areas to convert the irradiated layers to an intermediate oxide state, the nonirradiated areas being unchanged. The nonirradiated areas are then dissolved away, leaving a pattern of oxide material. This oxide material is then converted to a high T.sub.c superconducting state, as by annealing in an oxygen atmosphere. This provides the patterned layer of high T.sub.c oxide superconductor. An example of a such a superconductor is a mixed copper oxide, such as Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x.

Abstract: A method for causing an open circuit in an electrical conductor is provided, including the steps of: conducting a direct current through the conductor; and applying heat at a selected location on the conductor whereat it is desired to cause the open circuit of the conductor.

Abstract: An optical process monitor primarily for use in laser wire bonding detects the reflectivity change of the wire being bonded in order to provide feedback control of the high power laser used for bonding the wire to a pad. A low power laser beam which is co-linear or combined with the high power laser beam is conducted to the bond site and reflected from the wire during the bonding cycle. The change in reflectivity of the wire during the bonding cycle is detected from the reflected low power laser beam. A signal commensurate with the detected change of reflectivity is used to control the power or duration of the high power laser during bonding.

Abstract: A method of producing ultrafine powders comprising metal silicide powder and the products produced by the method are disclosed. The ultrafine powders comprising metal silicide powders are ideally suited to form stable colloidal suspensions which are used in the production of conductive metal silicide containing films. The process employs gaseous reactants comprising a metal halide and a silicon-containing compound. The reactants are exposed to high intensity light to produce ultrafine powders. In addition to the production of metal silicide powders, the ultrafine powders may also include silicon powder and metal subhalide powder. The ultrafine powders are particularly suited for use in VLSI and VVLSI production.

Abstract: A method of producing a thin film comprising a conductive metal silicide and the products produced therefrom are disclosed. The method is much less complex than methods employed in the prior art for producing conductive thin films and the method reduces substrate damage by maintaining processing temperatures at about 1,000.degree. C. or less. The process employs a stable suspension comprising ultrafine powders in a solvent. This suspension is deposited on a surface of a substrate and is subsequently heated to form a thin conductive film. The thin conductive film comprises polycrystalline metal silicide, preferably a refractory metal silicide, and may also contain silicon. Composites comprising the thin conductive films and a substrate are also disclosed. The process and products are particularly suited for use in VLSI and VVLSI production.

Abstract: Conductive titanium silicide-containing films and composites comprising substrates and the film are produced by light induced chemical vapor deposition. The process eliminates the need to anneal the silicide film in order to produce a conductive film and overcomes the problem of substrate damage associated with high temperature deposition processes. The process comprises the steps of: exposing gas phase reactants comprising a titanium halide and a silicon containing compound to high intensity light; exposing a preheated substrate to the exposed gases to cause a conductive titanium silicide film to be formed thereon; and, maintaining the substrate, throughout the process, at a temperature below that temperature which would induce a thermal reaction between the gas phase reactants. The films and composites produced by the process are particularly suited for use in VLSI and VVLSI production.