Abstract: Embodiments disclosed herein include an apparatus that includes an electrostatic chuck (ESC). The electrostatic chuck may include a first body that is electrically conductive, and a ceramic insert on the first body with an electrode embedded within the ceramic insert. In an embodiment, the apparatus may further include a facility plate that is coupled to the ESC. The facility plate may include a second body that is electrically conductive with a hole through the second body. In an embodiment, a DC input connector is provided through the hole, and an RF feed line is coupled to the second body. In an embodiment, a pin of the DC input connector is electrically isolated from the RF feed line.

Abstract: Embodiments disclosed herein include an apparatus that includes an electrostatic chuck (ESC). The electrostatic chuck may include a first body that is electrically conductive, and a ceramic insert on the first body with an electrode embedded within the ceramic insert. In an embodiment, the apparatus may further include a facility plate that is coupled to the ESC. The facility plate may include a second body that is electrically conductive with a hole through the second body. In an embodiment, a DC input connector is provided through the hole, and an RF feed line is coupled to the second body. In an embodiment, a pin of the DC input connector is electrically isolated from the RF feed line.

Abstract: Methods and apparatus for laser patterning leverage mask trench debris removal techniques to form etch singulation trenches. In some embodiments, the method includes forming a mask layer on the wafer, forming a pattern in the mask layer using a laser of a laser assembly where the pattern allows singulation of the wafer by deep etching and forms a trench in the mask layer with a laser beam which has a process point at a bottom of the trench, directing gas nozzles that flow a pressurized gas at the process point in the trench as the pattern is formed with a gas flow angle relative to the process point and evacuating debris from the trench using an area of negative pressure where the gas flow from gas nozzles and the area of negative pressure are in fluid contact and are confined within a cylindrical housing.

Abstract: Embodiments disclosed herein include an apparatus that includes an electrostatic chuck (ESC). The electrostatic chuck may include a first body that is electrically conductive, and a ceramic insert on the first body with an electrode embedded within the ceramic insert. In an embodiment, the apparatus may further include a facility plate that is coupled to the ESC. The facility plate may include a second body that is electrically conductive with a hole through the second body. In an embodiment, a DC input connector is provided through the hole, and an RF feed line is coupled to the second body. In an embodiment, a pin of the DC input connector is electrically isolated from the RF feed line.

Abstract: Embodiments disclosed herein may include an apparatus that includes a body with a first surface and a second surface opposite from the first surface. In an embodiment, the body is an electrically conductive material. A hole may be formed into the first surface of the body, and a ceramic plate may be on the second surface of the body. An electrically conductive electrode may be embedded in the ceramic plate. In an embodiment, the apparatus may further include a pin that is electrically conductive and positioned in the hole. The pin may be electrically isolated from the body, and the pin may be electrically coupled to the electrode embedded in the ceramic plate.

Abstract: Embodiments of substrate supports having electrostatic chucks (ESCs) for use in substrate process chambers are provided herein. In some embodiments, a substrate support includes: an electrostatic chuck (ESC) having a top surface and a plurality of mesas extending upward from the top surface, wherein an upper surface of the plurality of mesas define a substrate support surface, wherein a total surface area of the substrate support surface is about 18 to about 40 percent a total surface area of the upper surface, and wherein the ESC includes a plurality of backside gas openings extending through the ESC; and one or more chucking electrodes disposed in the ESC.

Abstract: Methods and apparatus for laser patterning leverage mask trench debris removal techniques to form etch singulation trenches. In some embodiments, the method includes forming a mask layer on the wafer, forming a pattern in the mask layer using a laser of a laser assembly where the pattern allows singulation of the wafer by deep etching and forms a trench in the mask layer with a laser beam which has a process point at a bottom of the trench, directing gas nozzles that flow a pressurized gas at the process point in the trench as the pattern is formed with a gas flow angle relative to the process point and evacuating debris from the trench using an area of negative pressure where the gas flow from gas nozzles and the area of negative pressure are in fluid contact and are confined within a cylindrical housing.

Abstract: Methods and apparatus for laser patterning leverage mask trench debris removal techniques to form etch singulation trenches. In some embodiments, the method includes forming a mask layer on the wafer, forming a pattern in the mask layer using a laser of a laser assembly where the pattern allows singulation of the wafer by deep etching and forms a trench in the mask layer with a laser beam which has a process point at a bottom of the trench, directing gas nozzles that flow a pressurized gas at the process point in the trench as the pattern is formed with a gas flow angle relative to the process point and evacuating debris from the trench using an area of negative pressure where the gas flow from gas nozzles and the area of negative pressure are in fluid contact and are confined within a cylindrical housing.

Abstract: Methods and apparatus for laser patterning leverage mask trench debris removal techniques to form etch singulation trenches. In some embodiments, the method includes forming a mask layer on the wafer, forming a pattern in the mask layer using a laser of a laser assembly where the pattern allows singulation of the wafer by deep etching and forms a trench in the mask layer with a laser beam which has a process point at a bottom of the trench, directing gas nozzles that flow a pressurized gas at the process point in the trench as the pattern is formed with a gas flow angle relative to the process point and evacuating debris from the trench using an area of negative pressure where the gas flow from gas nozzles and the area of negative pressure are in fluid contact and are confined within a cylindrical housing.

Abstract: Shadow ring kits and methods of dicing semiconductor wafers are described. In an example, an etch apparatus includes a chamber, and a plasma source within or coupled to the chamber. An electrostatic chuck is within the chamber, the electrostatic chuck including a conductive pedestal to support a substrate carrier sized to support a wafer having a first diameter. A shadow ring assembly is between the plasma source and the electrostatic chuck, the shadow ring assembly sized to process a wafer having a second diameter smaller than the first diameter.