Patents by Inventor ARUP KUMAR RATH

ARUP KUMAR RATH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Photovoltaic nanocomposite comprising solution processed inorganic bulk nano-heterojunctions, solar cell and photodiode devices comprising the nanocomposite
    Patent number: 9349888
    Abstract: Photovoltaic nanocomposite and solar cell device including the photovoltaic nanocomposite, where the photovoltaic nanocomposite includes a film of solution processed semiconductor materials having an n-type material selected from n-type quantum dots and n-type nanocrystals, and a p-type material selected from p-type quantum dots and p-type nanocrystals, and where the n-type material has a conduction band level at least equal, compared to vacuum level, to that of the p-type material, the p-type material has a valence band at the most equal, compared to vacuum level, to that of the n-type material. at least a portion of the n-type material and at least a portion of the p-type material are present in a bulk nano-heterojunction binary nanocomposite layer having a blend of the n-type material and the p-type material.
    Type: Grant
    Filed: April 9, 2012
    Date of Patent: May 24, 2016
    Assignee: FUNDACIO INSTITUT DE CIENCIES FOTONIQUES
    Inventors: Gerasimos Konstantatos, Arup Kumar Rath, Maria Bernechea Navarro, Luis Martinez Montblanch
  • PHOTOVOLTAIC NANOCOMPOSITE COMPRISING SOLUTION PROCESSED INORGANIC BULK NANO-HETEROJUNCTIONS, SOLAR CELL AND PHOTODIODE DEVICES COMPRISING THE NANOCOMPOSITE
    Publication number: 20130263918
    Abstract: Photovoltaic nanocomposite and solar cell device including the photovoltaic nanocomposite, where the photovoltaic nanocomposite includes a film of solution processed semiconductor materials having an n-type material selected from n-type quantum dots and n-type nanocrystals, and a p-type material selected from p-type quantum dots and p-type nanocrystals, and where the n-type material has a conduction band level at least equal, compared to vacuum level, to that of the p-type material, the p-type material has a valence band at the most equal, compared to vacuum level, to that of the n-type material. at least a portion of the n-type material and at least a portion of the p-type material are present in a bulk nano-heterojunction binary nanocomposite layer having a blend of the n-type material and the p-type material.
    Type: Application
    Filed: April 9, 2012
    Publication date: October 10, 2013
    Applicant: FUNDACIÓ INSTITUT DE CIÈNCIES FOTÒNIQUES
    Inventors: GERASIMOS KONSTANTATOS, ARUP KUMAR RATH, MARIA BERNECHEA NAVARRO, LUIS MARTINEZ MONTBLANCH