Abstract: Reactor for production of silicon, comprising a reactor volume, distinctive in that the reactor comprises or is operatively arranged to at least one means for setting a silicon-containing reaction gas for chemical vapor deposition (CVD) into rotation inside the reactor volume. Method for production of silicon.

Abstract: Method for producing a powder comprising particles (26) comprising amorphous, micro- or nano-crystalline Silicon nitride. The method comprises the steps of supplying a reactant gas (12) containing Silicon, and a reactant gas (12) containing Nitrogen, to a reaction chamber (16) of a reactor (10), and heating said reactant gases (12) to a temperature in the range of 510° C. to 1300° C. which is sufficient for thermal decomposition or reduction of the reactant gases (12) to take place inside the reaction chamber (16) to thereby produce a powder of amorphous, micro- or nano-crystalline particles (26) comprising Silicon nitride (SiNx) in which the atomic ratio of Silicon to Nitrogen is in the range 1:0.2 to 1:0.9. The produced powder of particles (26) may be used to produce a film, an electrode, such as an anode, for a battery, such as a Lithium ion battery.

Abstract: This invention relates to an electronic semiconductive component comprising at least one layer (2,3) of a p-type or n-type material, wherein the layer of a said p- or n-type material is constituted by a metal hydride having a chosen dopant. The invention also relates to methods for producing the component.

Abstract: Embodiments provide a gas distribution arrangement, a device for handling a chemical reaction comprising such a gas distribution arrangement and a method of providing a chemical reaction chamber with a gas. The distribution arrangement comprises a distribution plate for separating a chemical reaction chamber from a gas inlet area and having a first side arranged to face the chemical reaction chamber and a second side arranged to face the gas inlet area and comprising a set of through holes stretching between the first and the second side, where the first side of the plate comprises a first material surrounding the holes and having a first thermal conductivity, and the plate also comprises a second material forming a base structure also surrounding the holes and having a second thermal conductivity.

Abstract: This invention relates to an electronic semiconductive component comprising at least one layer (2,3) of a p-type or n-type material, wherein the layer of a said p- or n-type material is constituted by a metal hydride having a chosen dopant. The invention also relates to methods for producing the component.

Abstract: The surface recombination velocity of a silicon sample is reduced by deposition of a thin hydrogenated amorphous silicon or hydrogenated amorphous silicon carbide film, followed by deposition of a thin hydrogenated silicon nitride film. The surface recombination velocity is further decreased by a subsequent anneal. Silicon solar cell structures using this new method for efficient reduction of the surface recombination velocity is claimed.

Abstract: The surface recombination velocity of a silicon sample is reduced by deposition of a thin hydrogenated amorphous silicon or hydrogenated amorphous silicon carbide film, followed by deposition of a thin hydrogenated silicon nitride film. The surface recombination velocity is further decreased by a subsequent anneal. Silicon solar cell structures using this new method for efficient reduction of the surface recombination velocity is claimed.

Abstract: Embodiments provide a gas distribution arrangement, a device for handling a chemical reaction comprising such a gas distribution arrangement and a method of providing a chemical reaction chamber with a gas. The distribution arrangement comprises a distribution plate for separating a chemical reaction chamber from a gas inlet area and having a first side arranged to face the chemical reaction chamber and a second side arranged to face the gas inlet area and comprising a set of through holes stretching between the first and the second side, where the first side of the plate comprises a first material surrounding the holes and having a first thermal conductivity, and the plate also comprises a second material forming a base structure also surrounding the holes and having a second thermal conductivity.

Abstract: Method for producing nano- to micro-scale particles of a material by homogeneous thermal decomposition or reduction of a reactant gas (12) containing the material, whereby the method comprises the steps of supplying the reactant gas (12) to a reaction chamber (16) of a reactor via at least one inlet, and a) heating the reactant gas (12) to a temperature sufficient for thermal decomposition or reduction of the reactant gas (12) to take place inside the reaction chamber (16), or b) confining a temperature dependent reaction or reaction sequence involving a plurality of reactants inside the reaction chamber (16). The method comprises the step of supplying a primary gas (22) through a porous membrane (20) constituting at least part of at least one wall of the reaction chamber (16) to provide a protective inert gas boundary to minimize or prevent the deposition of the material on the porous membrane (20).

Abstract: Reactor for production of silicon, comprising a reactor volume, distinctive in that the reactor comprises or is operatively arranged to at least one means for setting a silicon-containing reaction gas for chemical vapor deposition (CVD) into rotation inside the reactor volume. Method for production of silicon.

Abstract: This invention relates to an electronic semiconductive component comprising at least one layer (2,3) of a p-type or n-type material, wherein the layer of a said p- or n-type material is constituted by a metal hydride having a chosen dopant. The invention also relates to methods for producing the component.

Abstract: The surface recombination velocity of a silicon sample is reduced by deposition of a thin hydrogenated amorphous silicon or hydrogenated amorphous silicon carbide film, followed by deposition of a thin hydrogenated silicon nitride film. The surface recombination velocity is further decreased by a subsequent anneal. Silicon solar cell structures using this new method for efficient reduction of the surface recombination velocity is claimed.