Abstract: Methods and apparatuses are provided for evaluating or testing stiction in Microelectromechanical Systems (MEMS) devices utilizing a mechanized shock pulse generation approach. In one embodiment, the method includes the step or process of loading a MEMS device, such as a multi-axis MEMS accelerometer, into a socket provided on a Device-Under-Test (DUT) board. After loading the MEMS device into the socket, a series of controlled shock pulses is generated and transmitted through the MEMS device utilizing a mechanized test apparatus. The mechanized test apparatus may, for example, repeatedly move the DUT board over a predefined motion path to generate the controlled shock pulses. In certain cases, transverse vibrations may also be directed through the tested MEMS device in conjunction with the shock pulses. An output of the MEMS device is then monitored to determine whether stiction of the MEMS device occurs during each of the series of controlled shock pulses.

Abstract: Methods and apparatuses are provided for evaluating or testing stiction in Microelectromechanical Systems (MEMS) devices utilizing a mechanized shock pulse generation approach. In one embodiment, the method includes the step or process of loading a MEMS device, such as a multi-axis MEMS accelerometer, into a socket provided on a Device-Under-Test (DUT) board. After loading the MEMS device into the socket, a series of controlled shock pulses is generated and transmitted through the MEMS device utilizing a mechanized test apparatus. The mechanized test apparatus may, for example, repeatedly move the DUT board over a predefined motion path to generate the controlled shock pulses. In certain cases, transverse vibrations may also be directed through the tested MEMS device in conjunction with the shock pulses. An output of the MEMS device is then monitored to determine whether stiction of the MEMS device occurs during each of the series of controlled shock pulses.

Abstract: Methods have been provided for forming a micro-electromechanical systems (“MEMS”) device (100) from a substrate (500) comprising a handle layer (108) and a cap (132) overlying the handle layer (108). In one exemplary embodiment, the method includes cutting through the substrate (500) to separate the substrate (500) into a first die (148) and a second die (150), the first die (148) having a first sidewall (138), and depositing a conductive material (182) onto the first sidewall (138) to electrically couple the cap (132) to the handle layer (108).

Abstract: A MEMS device (100) is provided that includes a handle layer (108) having a sidewall (138), a cap (132) overlying said handle layer (108), said cap (132) having a sidewall (138), and a conductive material (136) disposed on at least a portion of said sidewall of said cap (138) and said sidewall of said handle layer (138) to thereby electrically couple said handle layer (108) to said cap (132). A wafer-level method for manufacturing the MEMS device from a substrate (300) comprising a handle layer (108) and a cap (132) overlying the handle layer (108) is also provided. The method includes making a first cut through the cap (132) and at least a portion of the substrate (300) to form a first sidewall (138), and depositing a conductive material (136) onto the first sidewall (138) to electrically couple the cap (132) to the substrate (300).

Abstract: Methods are provided for manufacturing a sensor. The method comprises depositing a sacrificial material at a first predetermined thickness onto a wafer having at least one sense element mounted thereon, the sacrificial material deposited at least partially onto the at least one sense element, forming an encapsulating layer at a second predetermined thickness less than the first predetermined thickness over the wafer and around the deposited sacrificial material, and removing the sacrificial material. Apparatus for a sensor manufactured by the aforementioned method are also provided.

Abstract: An electromagnetic interference (EMI) and/or electromagnetic radiation shield is formed by forming a conductive layer (42, 64) over a mold encapsulant (35, 62). The conductive layer (42, 64) may be electrically coupled using a wire to the leadframe (10, 52) of the semiconductor package (2, 50). The electrical coupling can be performed by wire bonding two device portions (2, 4, 6, 8) of a leadframe (10) together and then cutting the wire bond (32) by forming a groove (40) in the overlying mold encapsulant (35) to form two wires (33). The conductive layer (42) is then electrically coupled to each of the two wires (33). In another embodiment, a looped wire bond (61) is formed on top of a semiconductor die (57). After mold encapsulation, portions of the mold encapsulant (62) are removed to expose portions of the looped wire bond (61).

Abstract: A high sensitivity, Z-axis, capacitive microaccelerometer having stiff sense/feedback electrodes and a method of its manufacture on a single-side of a semiconductor wafer are provided. The microaccelerometer is manufactured out of a single silicon wafer and has a silicon-wafer-thick proof mass, small and controllable damping, large capacitance variation and can be operated in a force-rebalanced control loop. One of the electrodes moves with the proof mass relative to the other electrode which is fixed. The multiple, stiffened electrodes have embedded therein damping holes to facilitate force-rebalanced operation of the device and to control the damping factor. Using the whole silicon wafer to form the thick large proof mass and using thin sacrificial layers to form narrow uniform capacitor air gaps over large areas provide large-capacitance sensitivity. The manufacturing process is simple and thus results in low cost and high yield manufacturing.