Patents by Inventor Arvind Sundaramurthy

Arvind Sundaramurthy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11300885
    Abstract: Embodiments described herein comprise extreme ultraviolet (EUV) reticles and methods of forming EUV reticles. In an embodiment, the reticle may comprise a substrate and a mirror layer over the substrate. In an embodiment, the mirror layer comprises a plurality of alternating first mirror layers and second mirror layers. In an embodiment, a phase-shift layer is formed over the mirror layer. In an embodiment, openings for printable features and openings for non-printable features are formed into the phase-shift layer. In an embodiment, the non-printable features have a dimension that is smaller than a dimension of the printable features.
    Type: Grant
    Filed: July 25, 2018
    Date of Patent: April 12, 2022
    Assignee: Intel Corporation
    Inventors: Robert Bristol, Guojing Zhang, Tristan Tronic, John Magana, Chang Ju Choi, Arvind Sundaramurthy, Richard Schenker
  • Publication number: 20200033736
    Abstract: Embodiments described herein comprise extreme ultraviolet (EUV) reticles and methods of forming EUV reticles. In an embodiment, the reticle may comprise a substrate and a mirror layer over the substrate. In an embodiment, the mirror layer comprises a plurality of alternating first mirror layers and second mirror layers. In an embodiment, a phase-shift layer is formed over the mirror layer. In an embodiment, openings for printable features and openings for non-printable features are formed into the phase-shift layer. In an embodiment, the non-printable features have a dimension that is smaller than a dimension of the printable features.
    Type: Application
    Filed: July 25, 2018
    Publication date: January 30, 2020
    Inventors: Robert BRISTOL, Guojing ZHANG, Tristan TRONIC, John MAGANA, Chang Ju CHOI, Arvind SUNDARAMURTHY, Richard SCHENKER
  • Patent number: 9046761
    Abstract: Techniques are disclosed for using sub-resolution phased assist features (SPAF) in a lithography mask to improve through process pattern fidelity and/or mitigate inverted aerial image problems. The technique also may be used to improve image contrast in non-inverted weak image sites. The use of SPAF in accordance with some such embodiments requires no adjustment to existing design rules, although adjustments can be made to enable compliance with mask inspection constraints. The use of SPAF also does not require changing existing fab or manufacturing processes, especially if such processes already comprehend phased shift mask capabilities. The SPAFs can be used to enhance aerial image contrast, without the SPAFs themselves printing. In addition, the SPAF phase etch depth can be optimized so as to make adjustments to a given predicted printed feature critical dimension.
    Type: Grant
    Filed: March 18, 2013
    Date of Patent: June 2, 2015
    Assignee: INTEL CORPORATION
    Inventors: Shem O. Ogadhoh, Charles H. Wallace, Ryan Pearman, Sven Henrichs, Arvind Sundaramurthy, Swaminathan Sivakumar
  • Publication number: 20130216941
    Abstract: Techniques are disclosed for using sub-resolution phased assist features (SPAF) in a lithography mask to improve through process pattern fidelity and/or mitigate inverted aerial image problems. The technique also may be used to improve image contrast in non-inverted weak image sites. The use of SPAF in accordance with some such embodiments requires no adjustment to existing design rules, although adjustments can be made to enable compliance with mask inspection constraints. The use of SPAF also does not require changing existing fab or manufacturing processes, especially if such processes already comprehend phased shift mask capabilities. The SPAFs can be used to enhance aerial image contrast, without the SPAFs themselves printing. In addition, the SPAF phase etch depth can be optimized so as to make adjustments to a given predicted printed feature critical dimension.
    Type: Application
    Filed: March 18, 2013
    Publication date: August 22, 2013
    Inventors: Shem O. Ogadhoh, Charles H. Wallace, Ryan Pearman, Sven Henrichs, Arvind Sundaramurthy, Swaminathan Sivakumar