Abstract: A new photovoltaic (PV) cell structure, prepared on transparent substrate with transparent conductive oxide (TCO) layer and having nanorod zinc oxide layer. The cell has a thin conductive layer of doped zinc oxide deposited on the nanorod zinc oxide layer, an extremely thin blocking layer of titanium oxide or indium sulfide on the thin conductive layer, a buffer layer of indium sulfide on the extremely thin blocking layer, an absorber layer, comprising copper indium disulfide on said buffer layer and one electrode attached to the transparent conductive oxide layer and a second electrode attached to the absorber layer. Also, a method of preparing a zinc oxide nanorod PV cell entirely by chemical spray pyrolysis is disclosed. Efficiency up to 3.9% is achieved by simple continuous non-vacuum process.

Abstract: A new photovoltaic (PV) cell structure, prepared on transparent substrate with transparent conductive oxide (TCO) layer and having nanorod zinc oxide layer. The cell has a thin conductive layer of doped zinc oxide deposited on the nanorod zinc oxide layer, an extremely thin blocking layer of titanium oxide or indium sulfide on the thin conductive layer, a buffer layer of indium sulfide on the extremely thin blocking layer, an absorber layer, comprising copper indium disulfide on said buffer layer and one electrode attached to the transparent conductive oxide layer and a second electrode attached to the absorber layer. Also, a method of preparing a zinc oxide nanorod PV cell entirely by chemical spray pyrolysis is disclosed. Efficiency up to 3.9% is achieved by simple continuous non-vacuum process.

Abstract: A superstrate configuration window layer/buffer layer/absorber layer solar cell structures were prepared either entirely by spray pyrolysis or in combination with chemical bath deposition (CBD) technique. Such solar cell comprises a glass substrate with transparent conductiong oxide layer on it, wide band gap window layer of ZnO or TiO2 on said oxide layer, prepared by chemical spray pyrolysis, CdS buffer layer on ZnO window layer, prepared by chemical spray pyrolysis, or by chemical bath deposition, or In—O—S buffer layer on TiO2 oxide layer, prepared by chemical bath deposition, and one or two layer CuInS2 absorber layer deposited on the buffer layer by chemical spray pyrolysis. A solar cell with output characteristics of Voc=456 mV, jSC=14.6 mA/cm2, FF=0.43 and efficiency of 2.9% was prepared with In—O—S buffer layer. A solar cell with CdS buffer layer was prepared entirely by spray pyrolysis, having output characteristics Voc=560 mV, jSC=8.2 mA/cm2, FF=0.5 and efficiency of 2.3%.