Abstract: A method for qualifying a mask for a lithography system, the mask having measurement points for detecting critical dimensions of the mask, comprising: first detection of critical dimensions of the mask at the measurement points, the first detection taking place sequentially and the duration of the first detection defining a measurement time period; determining reference measurement points from the measurement points, the number of reference measurement points being less than the number of measurement points; second detection of the at least one critical dimension of the mask at the reference measurement points; determining a deviation between the first and the second detected critical dimension at each of the reference measurement points; and applying a determined temporal profile of the correction factor to the at least one critical dimension to obtain a corrected critical dimension of the mask, and also a corresponding device for qualifying a mask for a lithography system.

Abstract: A method for qualifying a mask for a lithography system, the mask having measurement points for detecting critical dimensions of the mask, comprising: first detection of critical dimensions of the mask at the measurement points, the first detection taking place sequentially and the duration of the first detection defining a measurement time period; determining reference measurement points from the measurement points, the number of reference measurement points being less than the number of measurement points; second detection of the at least one critical dimension of the mask at the reference measurement points; determining a deviation between the first and the second detected critical dimension at each of the reference measurement points; and applying a determined temporal profile of the correction factor to the at least one critical dimension to obtain a corrected critical dimension of the mask, and also a corresponding device for qualifying a mask for a lithography system.

Abstract: The invention relates to a method and an apparatus for characterizing a microlithographic mask. In a method according to the invention, structures of a mask intended for use in a lithography process in a microlithographic projection exposure apparatus are illuminated by an illumination optical unit, wherein the mask is imaged onto a detector unit which has a plurality of pixels by an imaging optical unit.

Abstract: The invention relates to a method and an apparatus for characterizing a microlithographic mask. In a method according to the invention, structures of a mask intended for use in a lithography process in a microlithographic projection exposure apparatus are illuminated by an illumination optical unit, wherein the mask is imaged onto a detector unit which has a plurality of pixels by an imaging optical unit.