Patents by Inventor Asaf Albo

Asaf Albo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and system for detecting light and designing a light detector
    Patent number: 9450001
    Abstract: A light detection system which comprises an active region between a back contact layer and a front contact layer is disclosed. The active region comprises a quantum well structure having a quantum well between quantum barriers, wherein the quantum well comprises foreign atoms that induce an excited bound state at an energy level which is above an energy level characterizing the quantum barriers.
    Type: Grant
    Filed: August 19, 2010
    Date of Patent: September 20, 2016
    Assignee: Technion Research & Development Foundation Limited
    Inventors: Asaf Albo, Gad Bahir, Dan Fekete
  • Strain-controlled atomic layer epitaxy, quantum wells and superlattices prepared thereby and uses thereof
    Patent number: 8513644
    Abstract: Processes for forming quantum well structures which are characterized by controllable nitride content are provided, as well as superlattice structures, optical devices and optical communication systems based thereon.
    Type: Grant
    Filed: October 22, 2012
    Date of Patent: August 20, 2013
    Assignee: Technion Research & Development Foundation Limited
    Inventors: Asaf Albo, Gad Bahir, Dan Fekete
  • Method and system for detecting light having a light absorbing layer with bandgap modifying atoms
    Patent number: 8492702
    Abstract: A light detection system is disclosed. The system comprises a light absorbing layer made of a semiconductor having majority carriers and minority carriers, and being incorporated with bandgap modifying atoms at a concentration selected so as to allow generation of photocurrent indicative of absorption of photons at any wavelength at least in the range of from about 3 ?m to about 5 ?m.
    Type: Grant
    Filed: February 21, 2011
    Date of Patent: July 23, 2013
    Assignee: Technion Research & Development Foundation Limited
    Inventors: Gad Bahir, Dan Fekete, Asaf Albo
  • Light emitting system and method of fabricating and using the same
    Patent number: 8367450
    Abstract: A light emitting system is disclosed. The system comprises an active region having a stack of bilayer quantum well structures separated from each other by barrier layers. Each bilayer quantum well structure is formed of a first layer made of a first semiconductor alloy for electron confinement and a second layer made of a second semiconductor alloy for hole confinement, wherein a thickness and composition of each layer is such that a characteristic hole confinement energy of the bilayer quantum well structure is at least 200 meV.
    Type: Grant
    Filed: February 21, 2011
    Date of Patent: February 5, 2013
    Assignee: Technion Research & Development Foundation Ltd.
    Inventors: Gad Bahir, Dan Fekete, Asaf Albo
  • Strain-controlled atomic layer epitaxy, quantum wells and superlattices prepared thereby and uses thereof
    Patent number: 8293628
    Abstract: Processes for forming quantum well structures which are characterized by controllable nitride content are provided, as well as superlattice structures, optical devices and optical communication systems based thereon.
    Type: Grant
    Filed: May 28, 2010
    Date of Patent: October 23, 2012
    Assignee: Technion Research & Development Foundation Ltd.
    Inventors: Asaf Albo, Gad Bahir, Dan Fekete
  • LIGHT EMITTING SYSTEM AND METHOD OF FABRICATING AND USING THE SAME
    Publication number: 20110254471
    Abstract: A light emitting system is disclosed. The system comprises an active region having a stack of bilayer quantum well structures separated from each other by barrier layers. Each bilayer quantum well structure is formed of a first layer made of a first semiconductor alloy for electron confinement and a second layer made of a second semiconductor alloy for hole confinement, wherein a thickness and composition of each layer is such that a characteristic hole confinement energy of the bilayer quantum well structure is at least 200 meV.
    Type: Application
    Filed: February 21, 2011
    Publication date: October 20, 2011
    Applicant: Technion Research & Development Foundation Ltd.
    Inventors: Gad BAHIR, Dan Fekete, Asaf Albo
  • METHOD AND SYSTEM FOR DETECTING LIGHT
    Publication number: 20110204214
    Abstract: A light detection system is disclosed. The system comprises a light absorbing layer made of a semiconductor having majority carriers and minority carriers, and being incorporated with bandgap modifying atoms at a concentration selected so as to allow generation of photocurrent indicative of absorption of photons at any wavelength at least in the range of from about 3 ?m to about 5 ?m.
    Type: Application
    Filed: February 21, 2011
    Publication date: August 25, 2011
    Applicant: Technion Research & Development Foundation Ltd.
    Inventors: Gad Bahir, Dan Fekete, Asaf Albo
  • METHOD AND SYSTEM FOR DETECTING LIGHT AND DESIGNING A LIGHT DETECTOR
    Publication number: 20110133088
    Abstract: A light detection system which comprises an active region between a back contact layer and a front contact layer is disclosed. The active region comprises a quantum well structure having a quantum well between quantum barriers, wherein the quantum well comprises foreign atoms that induce an excited bound state at an energy level which is above an energy level characterizing the quantum barriers.
    Type: Application
    Filed: August 19, 2010
    Publication date: June 9, 2011
    Applicant: Technion Research & Development Foundation Ltd.
    Inventors: Asaf ALBO, Gad Bahir, Dan Fekete
  • STRAIN-CONTROLLED ATOMIC LAYER EPITAXY, QUANTUM WELLS AND SUPERLATTICES PREPARED THEREBY AND USES THEREOF
    Publication number: 20100301306
    Abstract: Processes for forming quantum well structures which are characterized by controllable nitride content are provided, as well as superlattice structures, optical devices and optical communication systems based thereon.
    Type: Application
    Filed: May 28, 2010
    Publication date: December 2, 2010
    Applicant: Technion Research & Development Foundation Ltd.
    Inventors: Asaf ALBO, Gad Bahir, Dan Fekete