Patents by Inventor Asaf Zuck

Asaf Zuck has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220161060
    Abstract: A radiotherapy treatment system and method used for conducting radiographic X-ray imaging on a target organ during radiographic treatment. The system comprises (a) an x-ray beam source configurable to deliver an X-ray beam to a target organ, (b) optical means for converging and shaping said beam to a cone-shaped X-ray beam of photons which hit the target organ simultaneously, (c) multiple high-Z nanoparticles attachable to the target organ, said high-Z nanoparticles absorbing said X-ray radiation and emitting X-ray fluorescence (XRF) photons, (d) at least one XRF detector for detecting said XRF photons ejecting out of a patient's body, and (e) control means for controlling the radiotherapy treatment procedure.
    Type: Application
    Filed: April 7, 2020
    Publication date: May 26, 2022
    Inventors: Asaf ZUCK, Zeev BURSHTEIN, Aharon BAR-DAVID, Zeev HAREL, Michael KLECKNER, Shirly BORUKHIN
  • Publication number: 20040232347
    Abstract: A radiation detection and imaging system, which includes at least one radiation detecting and imaging element comprising a planar substrate, a surface of which has been seeded with mercuric iodide grains having a diameter in the range of about 0.01-1.0 micron, before being subjected to a step of deposition thereon of a layer of polycrystalline mercuric iodide having a thickness of up to about 3000 microns. A process for preparing an element such as the one described. A planar substrate, wherein a surface thereof has been seeded with mercuric iodide grains having a diameter in the range of about 0.01-1.0 micron. A physical vapor deposition method for preparing a radiation detecting and imaging element comprising a planar substrate by deposition of a film of mercuric iodide having a maximum thickness of about 3000 microns on a surface on the substrate.
    Type: Application
    Filed: May 25, 2004
    Publication date: November 25, 2004
    Inventors: Leonid Melekhov, Asaf Zuck, Haim Hermon
  • Publication number: 20040200974
    Abstract: An element adapted for at least one use selected from high energy radiation detection, imaging and barrier use, which includes a planar substrate on a surface of which there is a layer polycrystalline mercuric iodide, which has been deposited from the vapor phase, having a thickness within the range of from more than 0.5 mm and up to about 10 mm. A process for preparing an element having such thicknesses. A planar substrate, having deposited on a surface thereof, a layer of mercuric iodide in at least two discrete adjacent sub-layers having a total thickness within the range of from greater than 0.5 mm to about 10 mm. A system adapted for at least one purpose selected from radiation detection, radiation imaging and high energy absorption, which includes an element having thicknesses as described above.
    Type: Application
    Filed: May 27, 2004
    Publication date: October 14, 2004
    Inventors: Haim Hermon, Asaf Zuck, Misha Lukach, Rima Kozlov, Michael Schieber