Abstract: An inspection method and apparatus includes control of an acceleration voltage of an electron beam, irradiation of the electron beam to an object to be inspected mounted on a stage which is continuously moving at least in one direction, and detection of at least one of secondary electrons and reflected electrons emanated from the object in response to the irradiation. An image of the object is obtained from the detected electron by using positional information of the stage and inspection or measurement of the object is conducted using and obtained image. In the detection, an electric field in the vicinity of the object mounted on the stage is controlled so that at least one secondary electrons and the reflected electrons emanated from the object in response to the irradiation of the electron beam are decelerated.

Abstract: In business process diagnosis, answers to questions is improved in their accuracy, and an accurate result of diagnosis is obtained. A computer diagnoses a business process of an organization based on answers to questions.

Abstract: A method of detecting a defect includes of determining an image acquisition condition for irradiating a converged electron beam onto a specimen and detecting a secondary electron emanated from the specimen, acquiring an image by detecting the secondary electron emanated from the specimen in synchronism with the irradiation of the electron beam, processing the acquired image to detect a defect on the specimen, and outputting information regarding the detected defect. The image acquisition condition is determined based on plural images which are acquired by changing at least one of acceleration condition of the secondary electron and an electrical field in the vicinity of the specimen.

Abstract: A method of detecting a defect includes of determining an image acquisition condition for irradiating a converged electron beam onto a specimen and detecting a secondary electron emanated from the specimen, acquiring an image by detecting the secondary electron emanated from the specimen in synchronism with the irradiation of the electron beam, processing the acquired image to detect a defect on the specimen, and outputting information regarding the detected defect. The image acquisition condition is determined based on plural images which are acquired by changing at least one of acceleration condition of the secondary electron and an electrical field in the vicinity of the specimen.

Abstract: An inspection method and apparatus includes control of an acceleration voltage of an electron beam, irradiation of the electron beam to an object to be inspected mounted on a stage which is continuously moving at least in one direction, and detection of at least one of secondary electrons and reflected electrons emanated from the object in response to the irradiation. An image of the object is obtained from the detected electron by using positional information of the stage and inspection or measurement of the object is conducted using an obtained image. In the detection, an electric field in the vicinity of the object mounted on the stage is controlled so that at least one of the secondary electrons and the reflected electrons emanated from the object in response to the irradiation of the electron beam are decelerated.

Abstract: A pattern inspecting method and apparatus in which changed particles irradiate an object substrate having patterns formed thereon, sequential detection on a time division basis utilizing a plurality of sensors at, at least one of a secondary electron, reflected electron and transparent electron generated from the object substrate which is irradiated is effected and digital images at a rate higher than a rate obtained with a plurality of the sensors or with a discrete sensor forming divided sensors by a time-series processing of the signal obtained through the detection on a time division basis is obtained. A defect of the patterns formed on the object substrate is detected in accordance with the obtained digital images.

Abstract: In the detecting system for irradiating the electron beam and detecting the secondary electron thereof, an area of the detector is an important factor for high-speed detection. For the technique of the current electron optical system and detector, a detector of the area larger than a constant area is necessary and detection of 200 Msps or more by receiving limitation on the frequency inversely proportional to the area is substantially difficult. For example, for detection at 400 Msps under the condition that the required area is 4 mm square and the rate for 4 mm square is defined as 150 Msps, four discrete high-speed detectors of 2 mm square are arranged to amplify and then add the signals for A/D conversion. Otherwise, the secondary electron is sequentially inputted to the detector of 8 mm square with the secondary electron deflector, the secondary electron is detected at 100 Msps and arranged after the A/D conversion. In any case, the area of 4 mm square and rate of 400 Msps can be attained.

Abstract: The present invention provides a scanning electron microscope (SEM) or optical inspection method and apparatus which correct differences in brightness between comparison images and thus which is capable of detecting a fine defect with a high degree of reliability without causing any false defect detection. According to the present invention, the brightness values of a pattern, which should be essentially the same, contained in two detected images to be compared are corrected in such a manner that, even if there may be a brightness difference in a portion free from defects, the brightness difference is reduced to such a degree so that it can be recognized as a normal portion. Also, a limit for the amount of correction is furnished in advance, and correction exceeding such limit value is not performed. Such correction prevents the difference in brightness that should be permitted as non-defective from being falsely recognized as a defect without overlooking great differences in brightness due to a defect.

Abstract: Conventionally, defect data outputted by an inspection system comprised only characteristic quantitative data, such as coordinate data, area, and projected length, and only the coordinate data for moving to a defect location could be utilized effectively. By contrast, the present invention, by using image data in addition to characteristic quantitative data as the defect data for an inspection system, enables the retrieval of image data via an outside results confirmation system. Further, in the case of defect data of a plurality of substrates, it is enabled to display a defect image during inspection by the fact that similar defects are retrieved via images and retrieval results are displayed as trends makes it possible to display a defect image during inspection by searching similar defects on images and displaying them as a trend, designating a substrate on the trend, thereby displaying the defect map thereof and designating a defect on the defect map.

Abstract: Conventionally, defect data outputted by an inspection system comprised only characteristic quantitative data, such as coordinate data, area, and projected length, and only the coordinate data for moving to a defect location could be utilized effectively. By contrast, the present invention, by using image data in addition to characteristic quantitative data as the defect data for an inspection system, enables the retrieval of image data via an outside results confirmation system. Further, in the case of defect data of a plurality of substrates, it is enabled to display a defect image during inspection by the fact that similar defects are retrieved via images and retrieval results are displayed as trends makes it possible to display a defect image during inspection by searching similar defects on images and displaying them as a trend, designating a substrate on the trend, thereby displaying the defect map thereof and designating a defect on the defect map.

Abstract: In an electron particle machine for observing, inspecting, processing or analyzing a semiconductor wafer as a substrate or a sample, a light source is installed in a preparation chamber. A chucking stage for chucking the semiconductor wafer with a chuck using static electricity is provided with parts for connecting to earth such that they are in contact with the chucked semiconductor wafer. After the chuck using static electricity is released after observation, inspection, process or analysis, a surface of the semiconductor wafer and the parts for connecting to earth are irradiated with light from the light source. This provides conductivity to the surface of the semiconductor wafer, so that charge accumulated on the semiconductor wafer is removed from the surface through the parts for connecting to earth.

Abstract: In a pattern inspecting apparatus, images of places which have been detected by repeating stage scan and stored successively in the order of detection and which can be expected to be the same pattern are compared with one another, then different places are selected as defect candidates, and a place which has become a defect candidate twice is regarded as a true defect. However, a comparison of images obtained by different stage scans and the occurrence of a place capable of being inspected only once lead to a deterioration in the performance of detecting various error defects and an area incapable of being inspected, respectively.

Abstract: A method and an apparatus for inspecting or measuring a sample based on charged-particle beam are provided to relieve charge-up of the sample, so that high-quality electron image is obtained. A UV light irradiation optical system is controlled by an irradiation controller, scanning of the charged-particle beam is controlled by a scanning controller, and the irradiation controller and the scanning controller are controlled by a general controller. They are mutually synchronized, and a signal from an electron detector is imaged by an image slicing circuit and an image processing circuit.

Abstract: The present invention provides techniques, including a method and system, for inspecting for defects in a circuit pattern on a semi-conductor material. One specific embodiment provides a trial inspection threshold setup method, where the initial threshold is modified after a defect analysis of trial inspection stored data. The modified threshold is then used as the threshold in actual inspection.

Abstract: An inspection method and apparatus includes control of an acceleration voltage of an electron beam, irradiation of the electron beam to an object to be inspected mounted on a stage which is continuously moving at least in one direction, and detection of at least one of secondary electrons and reflected electrons emanated from the object in response to the irradiation. An image of the object is obtained from the detected electron by using positional information of the stage and inspection or measurement of the object is conducted using an obtained image. In the detection, an electric field in the vicinity of the object mounted on the stage is controlled so that at least one of the secondary electrons and the reflected electrons emanated from the object in response to the irradiation of the electron beam are decelerated.

Abstract: The present invention relates to detection of defects with simple specification of the coordinates, in the inspection of an object having a plurality of patterns in which a portion having the two-dimensional repetition and portions having the repetition only in the X direction and in the Y direction are mixedly present. The cross comparison between a notice point and comparison points to for example which are repetitive pitches away from the notice point is carried out, and only the portion having the difference which can be found out with any of the comparison points is extracted as a defect candidate, which results in that the portion having the two-dimensional repetition as well as the portion having the repetition only in the X direction or in the Y direction can be inspected.

Abstract: A pattern inspection method in which an image can be detected without an image detection error due to an adverse effect to be given by such factors as ions implanted in a wafer, pattern connection/no-connection, and pattern edge formation. A digital image of an object substrate is attained through microscopic observation thereof, the attained digital image is examined to detect defects while masking a region pre-registered in terms of coordinates or while masking a pattern meeting a pre-registered pattern, and an image of each of the defects thus detected is displayed. Further, each of the defects detected using the digital image attained through microscopic observation is checked to judge whether its feature meets a pre-registered feature or not. Defects having a feature that meets the pre-registered feature are so displayed that they can be turned/off, or they are so displayed as to be distinguishable from the other defects.

Abstract: A pattern inspection method in which an image can be detected without an image detection error due to an adverse effect to be given by such factors as ions implanted in a wafer, pattern connection/no-connection, and pattern edge formation. A digital image of an object substrate is attained through microscopic observation thereof, the attained digital image is examined to detect defects while masking a region pre-registered in terms of coordinates or while masking a pattern meeting a pre-registered pattern, and an image of each of the defects thus detected is displayed. Further, each of the defects detected using the digital image attained through microscopic observation is checked to judge whether its feature meets a pre-registered feature or not. Defects having a feature that meets the pre-registered feature are so displayed that they can be turned/off, or they are so displayed as to be distinguishable from the other defects.

Abstract: The present invention provides techniques, including a method and system, for inspecting for defects in a circuit pattern on a semi-conductor material. One specific embodiment provides a trial inspection threshold setup method, where the initial threshold is modified after a defect analysis of trial inspection stored data. The modified threshold is then used as the threshold in actual inspection.

Abstract: A method for inspecting a pattern formed on a substrate, includes the steps of moving a table along a first direction on which a substrate to be inspected is mounted, irradiating a converged electron beam on the substrate by scanning the converged electron beam along a second direction which is perpendicular to the first direction; detecting an electron radiated from the substrate by the irradiation of the converged electron beam in which the movement of the table and the scanning of the converged electron beam are synchronized; forming a digital image of the substrate from the detected electron; improving a quality of the digital image by filtering the digital image; and detecting a defect of a pattern formed on the substrate by using the improved quality digital image.