Patents by Inventor Asai Makoto

Asai Makoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20020056836
    Abstract: A buffer layer of aluminum nitride (AlN) about 25 nm thick is provided on a sapphire substrate. An n+ layer of a high carrier density, which is about 4.0 &mgr;m thick and which is made of GaN doped with silicon (Si), is formed on the buffer layer. An intermediate layer of non-doped InxGa1−xN (0<x<1) about 3000 Å thick is formed on the high carrier density n+ layer. Then, an n-type clad layer of GaN about 250 Å thick is laminated on the intermediate layer. Further, three well layers of Ga0.8In0.2N about 30 Å thick each and two barrier layers of GaN about 70 Å thick each are laminated alternately on the n-type clad layer to thereby form a light-emitting layer of a structure with two multilayer quantum well (MQW) cycles.
    Type: Application
    Filed: March 10, 2000
    Publication date: May 16, 2002
    Inventors: Katsuhisa Sawazaki, Asai Makoto, Naoki Kaneyama