Abstract: Disclosed is a shield (8, 10) disposed between an ion source (1) of an ion milling device and a sample (7) so as to be in contact with the sample. The shield is characterized by having a circular shape having an opening at the center, and by being capable of rotating about an axis (11) extending through the opening. Further, a groove is provided in the ion source-side surface of an end portion of the shield, and an inclined surface is provided on an end portion of the shield. Thus, an ion milling device having a shield, wherein the maximum number of machining operations can be increased, and the position of the shield can be accurately adjusted.

Abstract: An ion milling device of the present invention is provided with a tilt stage (8) which is disposed in a vacuum chamber (15) and has a tilt axis parallel to a first axis orthogonal to an ion beam, a drive mechanism (9, 51) which has a rotation axis and a tilt axis parallel to a second axis orthogonal to the first axis and rotates or tilts a sample (3), and a switching unit which enables switching between a state in which the ion beam is applied while the sample is rotated or swung while the tilt stage is tilted, and a state in which the ion beams is applied while the tilt stage is brought into an untilted state and the sample is swung. Consequently, the ion milling device capable of performing cross-section processing and flat processing of the sample in the same vacuum chamber is implemented.

Abstract: Disclosed is a shield (8, 10) disposed between an ion source (1) of an ion milling device and a sample (7) so as to be in contact with the sample. The shield is characterized by having a circular shape having an opening at the center, and by being capable of rotating about an axis (11) extending through the opening. Further, a groove is provided in the ion source-side surface of an end portion of the shield, and an inclined surface is provided on an end portion of the shield. Thus, an ion milling device having a shield, wherein the maximum number of machining operations can be increased, and the position of the shield can be accurately adjusted.

Abstract: In three-dimensional shape measurement, a backscattered electron detection signal and selection signal generator in a control section controls, by selection signal, a signal switching section and a frame memory so that: detection signals from respective semiconductor elements are sequentially switched in the signal switching section in synchronization with a scanning frame of an electron beam on a sample; and the detection signals from the respective semiconductor elements can be sequentially recorded in recording addresses in the frame memory which correspond to the respective semiconductor elements. After four electron beam scanning sessions, each image data for three-dimensional shape measurement is recorded in the frame memory, and processed in a computing processing section for three-dimensional shape measurement, and the result can be displayed in a display section.

Abstract: In three-dimensional shape measurement, a backscattered electron detection signal and selection signal generator in a control section controls, by selection signal, a signal switching section and a frame memory so that: detection signals from respective semiconductor elements are sequentially switched in the signal switching section in synchronization with a scanning frame of an electron beam on a sample; and the detection signals from the respective semiconductor elements can be sequentially recorded in recording addresses in the frame memory which correspond to the respective semiconductor elements. After four electron beam scanning sessions, each image data for three-dimensional shape measurement is recorded in the frame memory, and processed in a computing processing section for three-dimensional shape measurement, and the result can be displayed in a display section.