Patents by Inventor Asami Shirakawa

Asami Shirakawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and apparatus for forming silicon oxide film
    Patent number: 7700156
    Abstract: In a method of forming a silicon oxide film, a target substrate that has a silicon layer on a surface is loaded into a process area within a reaction container, while setting the process area to have a loading temperature of 400° C. or less. Then, the process area that accommodates the target substrate is heated, from the loading temperature to a process temperature of 650° C. or more. Water vapor is supplied into the reaction container during said heating the process area, while setting the water vapor to have a first concentration in an atmosphere of the process area, and setting the process area to have a first reduced pressure. After said heating the process area to the process temperature, an oxidation gas is supplied into the reaction container, thereby oxidizing the silicon layer to form a silicon oxide film.
    Type: Grant
    Filed: June 30, 2004
    Date of Patent: April 20, 2010
    Assignees: Tokyo Electron Limited, Kabushiki Kaisha Toshiba
    Inventors: Kimiya Aoki, Katsushi Suzuki, Asami Shirakawa, Kenji Tago, Keisuke Suzuki, Kazuo Saki, Shinji Mori
  • Method and apparatus for forming silicon oxide film
    Publication number: 20050056220
    Abstract: In a method of forming a silicon oxide film, a target substrate that has a silicon layer on a surface is loaded into a process area within a reaction container, while setting the process area to have a loading temperature of 400° C. or less. Then, the process area that accommodates the target substrate is heated, from the loading temperature to a process temperature of 650° C. or more. Water vapor is supplied into the reaction container during said heating the process area, while setting the water vapor to have a first concentration in an atmosphere of the process area, and setting the process area to have a first reduced pressure. After said heating the process area to the process temperature, an oxidation gas is supplied into the reaction container, thereby oxidizing the silicon layer to form a silicon oxide film.
    Type: Application
    Filed: June 30, 2004
    Publication date: March 17, 2005
    Inventors: Kimiya Aoki, Katsushi Suzuki, Asami Shirakawa, Kenji Tago, Keisuke Suzuki, Kazuo Saki, Shinji Mori