Patents by Inventor Asbjørn Cennet Cliff Drachmann

Asbjørn Cennet Cliff Drachmann has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220149262
    Abstract: A method of fabricating a semiconductor-superconductor hybrid device comprises providing a workpiece comprising a semiconductor component, a layer of a first superconductor material on the semiconductor component, and a layer of a second superconductor material on the first superconductor material, the second superconductor material being different from the first superconductor material; etching the layer of the second superconductor material to expose a portion of the first superconductor material; and oxidising the portion of the first superconductor material to form a passivating layer on the semiconductor. The first superconductor provides energy coupling between the semiconductor and the second superconductor, and the passivating layer protects the semiconductor while allowing electrostatic access thereto. Also provided are a hybrid device, and a method of etching.
    Type: Application
    Filed: December 23, 2021
    Publication date: May 12, 2022
    Applicant: Microsoft Technology Licensing, LLC
    Inventors: Geoffrey Charles Gardner, Asbjørn Cennet Cliff Drachmann, Charles Masamed Marcus, Michael James Manfra
  • Patent number: 11211543
    Abstract: A method of fabricating a semiconductor-superconductor hybrid device comprises providing a workpiece comprising a semiconductor component, a layer of a first superconductor material on the semiconductor component, and a layer of a second superconductor material on the first superconductor material, the second superconductor material being different from the first superconductor material; etching the layer of the second superconductor material to expose a portion of the first superconductor material; and oxidising the portion of the first superconductor material to form a passivating layer on the semiconductor. The first superconductor provides energy coupling between the semiconductor and the second superconductor, and the passivating layer protects the semiconductor while allowing electrostatic access thereto. Also provided are a hybrid device, and a method of etching.
    Type: Grant
    Filed: February 20, 2020
    Date of Patent: December 28, 2021
    Assignee: Microsoft Technology Licensing, LLC
    Inventors: Geoffrey Charles Gardner, Asbjørn Cennet Cliff Drachmann, Charles Masamed Marcus, Michael James Manfra
  • Publication number: 20210175408
    Abstract: A method of fabricating a semiconductor-superconductor hybrid device comprises providing a workpiece comprising a semiconductor component, a layer of a first superconductor material on the semiconductor component, and a layer of a second superconductor material on the first superconductor material, the second superconductor material being different from the first superconductor material; etching the layer of the second superconductor material to expose a portion of the first superconductor material; and oxidising the portion of the first superconductor material to form a passivating layer on the semiconductor. The first superconductor provides energy coupling between the semiconductor and the second superconductor, and the passivating layer protects the semiconductor while allowing electrostatic access thereto. Also provided are a hybrid device, and a method of etching.
    Type: Application
    Filed: February 20, 2020
    Publication date: June 10, 2021
    Applicant: Microsoft Technology Licensing, LLC
    Inventors: Geoffrey Charles Gardner, Asbjørn Cennet Cliff Drachmann, Charles Masamed Marcus, Michael James Manfra