Patents by Inventor Ashenafi Damtew MAMUYE

Ashenafi Damtew MAMUYE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11926776
    Abstract: Disclosed are films comprising Ag, In, Ga, and S (AIGS) nanostructures and at least one ligand bound to the nanostructures. In some embodiment, the AIGS nanostructures have a photon conversion efficiency of greater than 32% and a peak wavelength emission of 480-545 nm. In some embodiments, the nanostructures have an emission spectrum with a FWHM of 24-38 nm.
    Type: Grant
    Filed: June 22, 2022
    Date of Patent: March 12, 2024
    Assignee: SHOEI CHEMICAL INC.
    Inventors: Ravisubhash Tangirala, Jay Yamanaga, Wenzhou Guo, Christopher Sunderland, Ashenafi Damtew Mamuye, Chunming Wang, Eunhee Hwang, Nahyoung Kim
  • Patent number: 11912581
    Abstract: A system and method implementing and manufacturing transition metal cyanide coordination compounds (TMCCC) comprising Na, Fe, Mn, C, H, N, S, and O, wherein the TMCCC have 0-14% hexacyanometallate vacancies such as for application in electrochemical cells, including sodium ion secondary batteries.
    Type: Grant
    Filed: July 7, 2023
    Date of Patent: February 27, 2024
    Assignee: Natron Energy, Inc.
    Inventors: Ashenafi Damtew Mamuye, Daniel Friebel, Aniruddh Shrivastava
  • Publication number: 20230002672
    Abstract: Disclosed are films comprising Ag, In, Ga, and S (AIGS) nanostructures and at least one ligand bound to the nanostructures. In some embodiment, the AIGS nanostructures have a photon conversion efficiency of greater than 32% and a peak wavelength emission of 480-545 nm. In some embodiments, the nanostructures have an emission spectrum with a FWHM of 24-38 nm.
    Type: Application
    Filed: June 22, 2022
    Publication date: January 5, 2023
    Applicant: Nanosys, Inc.
    Inventors: Ravisubhash TANGIRALA, Jay YAMANAGA, Wenzhou GUO, Christopher SUNDERLAND, Ashenafi Damtew MAMUYE, Chunming WANG, Eunhee HWANG, Nahyoung KIM
  • Patent number: 11407940
    Abstract: Disclosed are films comprising Ag, In, Ga, and S (AIGS) nanostructures and at least one ligand bound to the nanostructures. In some embodiment, the AIGS nanostructures have a photon conversion efficiency of greater than 32% and a peak wavelength emission of 480-545 nm. In some embodiments, the nanostructures have an emission spectrum with a FWHM of 24-38 nm.
    Type: Grant
    Filed: February 3, 2021
    Date of Patent: August 9, 2022
    Assignee: Nanosys, Inc.
    Inventors: Ravisubhash Tangirala, Jay Yamanaga, Wenzhou Guo, Christopher Sunderland, Ashenafi Damtew Mamuye, Chunming Wang, Eunhee Hwang, Nahyoung Kim
  • Publication number: 20220228057
    Abstract: Disclosed are nanostructures comprising Ag, In, Ga, and S and a shell comprising Ag, Ga and S, wherein the nanostructures have a peak wavelength emission of 480-545 nm and wherein at least about 80% of the emission is band-edge emission. Also disclosed are methods of making the nanostructures.
    Type: Application
    Filed: June 18, 2020
    Publication date: July 21, 2022
    Applicant: NANOSYS, INC.
    Inventors: Ashenafi Damtew MAMUYE, Christopher SUNDERLAND, Ilan JEN-LA PLANTE, Chunming WANG, John J. CURLEY, Nahyoung KIM, Ravisubhash TANGIRALA
  • Publication number: 20220195294
    Abstract: Disclosed are films comprising Ag, In, Ga, and S (AIGS) nanostructures and at least one ligand bound to the nanostructures. In some embodiment, the AIGS nanostructures have a photon conversion efficiency of greater than 32% and a peak wavelength emission of 480-545 nm. In some embodiments, the nanostructures have an emission spectrum with a FWHM of 24-38 nm.
    Type: Application
    Filed: February 3, 2021
    Publication date: June 23, 2022
    Applicant: Nanosys, Inc.
    Inventors: Ravisubhash TANGIRALA, Jay YAMANAGA, Wenzhou GUO, Christopher SUNDERLAND, Ashenafi Damtew MAMUYE, Chunming WANG, Eunhee HWANG, Nahyoung KIM
  • Patent number: 11104847
    Abstract: The invention pertains to the field of nanotechnology. More particularly, the invention relates to highly luminescent nanostructures, particularly highly luminescent nanostructures comprising a ZnTe core and CdS, CdSe, CdTe, ZnS, ZnSe, or ZnTe shell layers. The nanostructures show strong absorbance at 450 nm and have a high OD450/mass ratio. The invention also relates to methods of producing such nanostructures.
    Type: Grant
    Filed: January 24, 2020
    Date of Patent: August 31, 2021
    Assignee: Nanosys, Inc.
    Inventors: Ashenafi Damtew Mamuye, Christopher Sunderland, Chunming Wang
  • Patent number: 10927294
    Abstract: Disclosed are nanostructures comprising Ag, In, Ga, and S and a shell comprising Ag, Ga and S, wherein the nanostructures have a peak wavelength emission of 480-545 nm and wherein at least about 80% of the emission is band-edge emission. Also disclosed are methods of making the nanostructures.
    Type: Grant
    Filed: June 18, 2020
    Date of Patent: February 23, 2021
    Assignee: Nanosys, Inc.
    Inventors: Ashenafi Damtew Mamuye, Christopher Sunderland, Ilan Jen-La Plante, Chunming Wang, John J. Curley
  • Publication number: 20200399535
    Abstract: Disclosed are nanostructures comprising Ag, In, Ga, and S and a shell comprising Ag, Ga and S, wherein the nanostructures have a peak wavelength emission of 480-545 nm and wherein at least about 80% of the emission is band-edge emission. Also disclosed are methods of making the nanostructures.
    Type: Application
    Filed: June 18, 2020
    Publication date: December 24, 2020
    Applicant: Nanosys, Inc.
    Inventors: Ashenafi Damtew MAMUYE, Christopher SUNDERLAND, Ilan JEN-LA PLANTE, Chunming WANG, John J. CURLEY
  • Publication number: 20200291296
    Abstract: The invention pertains to the field of nanotechnology. More particularly, the invention relates to highly luminescent nanostructures, particularly highly luminescent nanostructures comprising a ZnTe core and CdS, CdSe, CdTe, ZnS, ZnSe, or ZnTe shell layers. The nanostructures show strong absorbance at 450 nm and have a high OD450/mass ratio. The invention also relates to methods of producing such nanostructures.
    Type: Application
    Filed: January 24, 2020
    Publication date: September 17, 2020
    Applicant: Nanosys, Inc.
    Inventors: Ashenafi Damtew MAMUYE, Christopher SUNDERLAND, Chunming WANG