Abstract: A semiconductor light emitting device including a light emitting layer disposed between an n-type region and a p-type region and contacts electrically connected to the n-type region and the p-type region is connected to a mount. A metal layer arbitrarily patterned to cover at least 20% of the area of the semiconductor light emitting device is plated on either a metal layer formed on the mount or a metal layer formed on one of the contacts. The plated metal layer may replace other known interconnecting techniques such as stud bumps. The semiconductor light emitting device is physically connected to the mount by causing interdiffusion between the contact surfaces of the metal layers. In some embodiments, a layer of solder is formed over the plated metal layer, and then the semiconductor light emitting device is physically connected to the mount by heating the solder.

Abstract: A device includes a flexible substrate, such as a polyimide substrate, and a semiconductor light emitting device, such as an LED, bonded on conductive regions on a first side of the flexible substrate in a flip chip configuration. The LED is bonded to the flexible substrate through, e.g., gold stud bumps. A plurality of LEDs may be bonded to the flexible substrate in different configurations, e.g., as individual LEDs, groups of LEDs or as LEDs having multiple chips. The flexible substrate may be spooled on a reel, e.g., for bonding and shipping purposes. In one embodiment, the structure is formed by providing a flexible substrate and a plurality of LEDs. Gold bumps are formed, e.g., on the contract regions of the flexible substrate or the contacts of the LEDs. The LEDs are bonded to the flexible substrate, e.g., using thermosonic or thermo-compression bonding, and the LEDs are then encapsulated.