Abstract: A method of selectively forming a germanium structure within semiconductor manufacturing processes removes the native oxide from a nitride surface in a chemical oxide removal (COR) process and then exposes the heated nitride and oxide surface to a heated germanium containing gas to selectively form germanium only on the nitride surface but not the oxide surface.

Abstract: Adding at least one non-silicon precursor (such as a germanium precursor, a carbon precursor, etc.) during formation of a silicon nitride, silicon oxide, silicon oxynitride or silicon carbide film improves the deposition rate and/or makes possible tuning of properties of the film, such as tuning of the stress of the film. Also, in a doped silicon oxide or doped silicon nitride or other doped structure, the presence of the dopant may be used for measuring a signal associated with the dopant, as an etch-stop or otherwise for achieving control during etching.

Abstract: A method of selectively forming a germanium structure within semiconductor manufacturing processes removes the native oxide from a nitride surface in a chemical oxide removal (COR) process and then exposes the heated nitride and oxide surface to a heated germanium containing gas to selectively form germanium only on the nitride surface but not the oxide surface.

Abstract: When forming a silicon nitride film from a nitrogen precursor, using a silicon precursor combination rather than a single silane precursor advantageously increases the deposition rate. For example, adding silane during formation of a silicon nitride film made using BTBAS and ammonia improves (increases) the deposition rate while still yielding a film with a favorably high stress.

Abstract: Adding at least one non-silicon precursor (such as a germanium precursor, a carbon precursor, etc.) during formation of a silicon nitride, silicon oxide, silicon oxynitride or silicon carbide film improves the deposition rate and/or makes possible tuning of properties of the film, such as tuning of the stress of the film. Also, in a doped silicon oxide or doped silicon nitride or other doped structure, the presence of the dopant may be used for measuring a signal associated with the dopant, as an etch-stop or otherwise for achieving control during etching.

Abstract: Stress level of a nitride film is adjusted as a function of two or more of the following: identity of a starting material precursor used to make the nitride film; identity of a nitrogen-containing precursor with which is treated the starting material precursor; ratio of the starting material precursor to the nitrogen-containing precursor; a set of CVD conditions under which the film is grown; and/or a thickness to which the film is grown. A rapid thermal chemical vapor deposition (RTCVD) film produced by reacting a compound containing silicon, nitrogen and carbon (such as bis-tertiary butyl amino silane (BTBAS)) with NH3 can provide advantageous properties, such as high stress and excellent performance in an etch-stop application. An ammonia-treated BTBAS film is particularly excellent in providing a high-stress property, and further having maintainability of that high-stress property over repeated annealing.

Abstract: Adding at least one non-silicon precursor (such as a germanium precursor, a carbon precursor, etc.) during formation of a silicon nitride, silicon oxide, silicon oxynitride or silicon carbide film improves the deposition rate and/or makes possible tuning of properties of the film, such as tuning of the stress of the film. Also, in a doped silicon oxide or doped silicon nitride or other doped structure, the presence of the dopant may be used for measuring a signal associated with the dopant, as an etch-stop or otherwise for achieving control during etching.

Abstract: Stress level of a nitride film is adjusted as a function of two or more of the following: identity of a starting material precursor used to make the nitride film; identity of a nitrogen-containing precursor with which is treated the starting material precursor; ratio of the starting material precursor to the nitrogen-containing precursor; a set of CVD conditions under which the film is grown; and/or a thickness to which the film is grown. A rapid thermal chemical vapor deposition (RTCVD) film produced by reacting a compound containing silicon, nitrogen and carbon (such as bis-tertiary butyl amino silane (BTBAS)) with NH3 can provide advantageous properties, such as high stress and excellent performance in an etch-stop application. An ammonia-treated BTBAS film is particularly excellent in providing a high-stress property, and further having maintainability of that high-stress property over repeated annealing.

Abstract: A method of forming polycrystalline silicon with ultra-small grain sizes employs a differential heating of the upper and lower sides of the substrate of a CVD apparatus, in which the lower side of the substrate receives considerably more power than the upper side, preferable more than 75% of the power; and in which the substrate is maintained during deposition at a temperature more than 50° C. above the 550° C. crystallization temperature of silicon.

Abstract: A compound that includes at least Si, N and C in any combination, such as compounds of formula (R—NH)4-nSiXn wherein R is an alkyl group (which may be the same or different), n is 1, 2 or 3, and X is H or halogen (such as, e.g., bis-tertiary butyl amino silane (BTBAS)), may be mixed with silane or a silane derivative to produce a film. A polysilicon silicon film may be grown by mixing silane (SiH4) or a silane derviative and a compound including Si, N and C, such as BTBAS. Films controllably doped with carbon and/or nitrogen (such as layered films) may be grown by varying the reagents and conditions.

Abstract: An apparatus (110) and method for depositing material on a semiconductor wafer with non-planar structures (114). The wafer (114) is positioned in a chamber (111), and reactive gases (132) are introduced into the chamber (111). The gases (132) and wafer (114) are heated, wherein the gas (132) temperature in the process chamber (111) and in the vicinity of the wafer (114) surface is lower than the temperature of the wafer (114) surface. A material is deposited on the wafer (114) surface using chemical vapor deposition. A gas cooler may be utilized to lower the temperature of the reactive gases (132) while the wafer (114) is heated.

Abstract: An apparatus and method are provided for forming a fluorine doped borophosphosilicate (F-BPSG) glass on a semiconductor device using a low pressure chemical vapor deposition process. The F-BPSG glass exhibits a substantially void-free and particle-free layer on the substrate for structures having gaps as narrow as 0.10 microns and with aspect ratios of 6:1. The reactant gases include sources of boron and phosphorous dopants, oxygen and a mixture of TEOS and FTES. Using a mixture of TEOS and FTES in a low pressure CVD process provides a F-BPSG layer having the above enhanced characteristics. It is a preferred method of the invention to perform the deposition at a temperature of about 750-850.degree. C. and a pressure of 1 to 3 torr to provide for in situ reflow of the F-BPSG during the deposition process. An anneal is also preferred under similar conditions in the same chemical vapor deposition chamber to further planarize the F-BPSG surface.