Abstract: Systems and methods for switching between voltages are provided. One system includes an output, first and second switches coupled to the output. The system also includes a first transmission gate coupled to the first switch and a second transmission gate coupled to the second switch. One method includes receiving, at the first transmission gate, a first pair of complementary voltages and receiving, at the second transmission gate, a second pair of complementary voltages. The method further includes selecting the smallest voltage amongst both pairs of complementary voltages and outputting a third pair of complementary voltages. In one method, the first pair of complementary voltages includes a first negative voltage and a positive voltage, the second pair of complementary voltages includes a second negative voltage and the positive voltage, and the third pair of complementary voltages includes the smaller of the first and second negative voltages and the positive voltage.

Abstract: Apparatus, systems, and methods for providing high voltage to memory devices are provided. One apparatus includes a low voltage input and a two-rail level shifting. The two-rail level shifting is configured to increase the low voltage or to decrease the low voltage to an amount that is less than or equal to a ground potential based on the amount of the low voltage. A system includes a low voltage input for receiving a voltage and a two-rail level shifting coupled to the low voltage input. The two-rail level shifting is configured to increase the voltage to a positive voltage if the voltage is equal to a ground potential and decrease the voltage to a negative voltage if the voltage is greater than the ground potential. One method includes receiving a voltage, modifying the voltage to generate one of a plurality of output voltages, and providing the output voltage to a memory device.

Abstract: Flash memory devices and systems are provided. One flash memory device includes an n-channel metal oxide semiconductor field-effect transistor (nMOSFET), a silicon-oxide-nitride-oxide silicon (SONOS) transistor coupled to the nMOSFET, and an isolated p-well coupled to the nMOSFET and the SONOS transistor. A flash memory system includes an array of memory devices divided into a plurality of paired sectors, a global bit line (GBL) configured to provide high voltage to each respective sector during erase and program operations coupled to each of the plurality of sectors, and a plurality of sense amplifiers coupled between a respective pair of sectors. Methods for operating a flash memory are also provided. One method includes providing high voltage, via the GBL, to the paired sectors during erase and program operations and providing low voltage, via a local bit line, to each memory device during read operations.

Abstract: Systems and methods for switching between voltages are provided. One system includes an output, first and second switches coupled to the output. The system also includes a first transmission gate coupled to the first switch and a second transmission gate coupled to the second switch. One method includes receiving, at the first transmission gate, a first pair of complementary voltages and receiving, at the second transmission gate, a second pair of complementary voltages. The method further includes selecting the smallest voltage amongst both pairs of complementary voltages and outputting a third pair of complementary voltages. In one method, the first pair of complementary voltages includes a first negative voltage and a positive voltage, the second pair of complementary voltages includes a second negative voltage and the positive voltage, and the third pair of complementary voltages includes the smaller of the first and second negative voltages and the positive voltage.

Abstract: Flash memory devices and systems are provided. One flash memory device includes an n-channel metal oxide semiconductor field-effect transistor (nMOSFET), a silicon-oxide-nitride-oxide silicon (SONOS) transistor coupled to the nMOSFET, and an isolated p-well coupled to the nMOSFET and the SONOS transistor. A flash memory system includes an array of memory devices divided into a plurality of paired sectors, a global bit line (GBL) configured to provide high voltage to each respective sector during erase and program operations coupled to each of the plurality of sectors, and a plurality of sense amplifiers coupled between a respective pair of sectors. Methods for operating a flash memory are also provided. One method includes providing high voltage, via the GBL, to the paired sectors during erase and program operations and providing low voltage, via a local bit line, to each memory device during read operations.