Abstract: A method for the production of methyl mercaptan is provided. The method comprises providing raw feed gases consisting of methane and hydrogen sulfide, introducing the raw feed gases into a non-thermal pulsed plasma corona reactor, and reacting the raw feed gases within the non-thermal pulsed plasma corona reactor with the reaction CH4+H2S?CH3SH+H2. An apparatus for the production of methyl mercaptan using a non-thermal pulsed plasma corona reactor is also provided.

Abstract: A method for the production of methyl mercaptan is provided. The method comprises providing raw feed gases consisting of methane and hydrogen sulfide, introducing the raw feed gases into a non-thermal pulsed plasma corona reactor, and reacting the raw feed gases within the non-thermal pulsed plasma corona reactor with the reaction CH4+H2S→CH3SH+H2. An apparatus for the production of methyl mercaptan using a non-thermal pulsed plasma corona reactor is also provided.

Abstract: A method of manufacturing a semiconductor wafer includes providing an ingot of semiconductor material, slicing the wafer from the ingot, and processing the wafer to increase parallelism of the front surface and the back surface. A final polishing operation on at least the front surface is performed by positioning the wafer between a first pad and a second pad and obtaining motion of the front and back surfaces of the wafer relative to the first and second pads to maintain parallelism of the front and back surfaces and to produce a finish on at least the front surface of the wafer so that the front surface is prepared for integrated circuit fabrication. In another aspect, the wafer is rinsed by a rinsing fluid to increase hydrodynamic lubrication. Other methods are directed to conditioning the polishing pad and to handling wafers after polishing. An apparatus for polishing wafers is also included.

Abstract: A method of manufacturing a semiconductor wafer includes providing an ingot of semiconductor material, slicing the wafer from the ingot, and processing the wafer to increase parallelism of the front surface and the back surface. A final polishing operation on at least the front surface is performed by positioning the wafer between a first pad and a second pad and obtaining motion of the front and back surfaces of the wafer relative to the first and second pads to maintain parallelism of the front and back surfaces and to produce a finish on at least the front surface of the wafer so that the front surface is prepared for integrated circuit fabrication. In another aspect, the wafer is rinsed by a rinsing fluid to increase hydrodynamic lubrication. Other methods are directed to conditioning the polishing pad and to handling wafers after polishing. An apparatus for polishing wafers is also included.

Abstract: A device for removing contaminants from a natural gas stream is provided. The device comprises a first adsorbent positioned within a first fluidized bed operating at a first predetermined temperature for removing at least a portion of the contaminants from the natural gas stream and creating a partially sweetened natural gas stream. A second adsorbent is positioned within a second fluidized bed operating at a second predetermined temperature for receiving the partially sweetened natural gas stream with the second adsorbent removing at least a portion of the contaminants from the partially sweetened natural gas stream. Furthermore, a conversion apparatus can be provided for converting H2S within the removed contaminants to elemental sulfur and hydrogen at a third predetermined temperature.