Abstract: Methods for fabricating busbar and finger metallization over TCO are disclosed. Rather than using expensive and relatively resistive silver paste, a high conductivity and relatively low cost copper is used. Methods for enabling the use of copper as busbar and fingers over a TCO are disclosed, providing good adhesion while preventing migration of the copper into the TCO. Also, provisions are made for easy soldering contacts to the copper busbars.

Abstract: This application for patent for Forest Fire Control Systems (FFiCS) describes an invention for prevention and control of forest fires (FF). The system comprises strategically located Ignition Detection and Uplink Signaling Towers (IDUSTs), equipped with the Global Positioning System (GPS) and a suitable optical/infrared Scanner and Detector Assembly (SDA), to continually scan the forest region to instantly detect the onset of the initial flames and sparks of any fire (f/s) within the region. The SDA may optionally utilize a Scanner and Accurate Location Calculator (SALC). Upon detecting an f/s, the IDUST instantly transmits relevant data to a Regional Forest Fire Control System (RFFCC) via a suitable communications means, optionally utilizing the Super-Efficient Satellite and Wireless Antenna System (SSWAS).

Abstract: This application for patent describes an invention toward achieving potentially hundred- to thousand-fold enhancement in the efficiency of the utilization of frequency-bandwidth for digital transmission of speech. This invention is based on the observation that human speech can be assumed to be composed of a series of contiguous fundamental ‘phonic elements’ (“phonoms”) that could be judiciously used toward developing an extremely low bit-rate digital coding of the speech signals. A generic example of a simple implementation of this invention—the basic equipment and associated device(s), methodologies and technologies—for ultr-low bit-rate voice-telecommunications over any transmission channel is also presented.

Abstract: An amorphous, stoichiometric, native, semiconductor oxide layer, with a sharp interface between the oxide layer and the substrate, is grown by directing electrons toward a semiconductor substrate in the presence of oxygen. The source of electrons may be a simple filament. This invention may be implemented with standard plasma growth techniques by extracting the electrons from the plasma production region and directing them to the substrate.

Abstract: An improved radio frequency (rf) powered radial flow cylindrical reactor utilizes a gas shield which substantially limits the glow plasma discharge reaction to a section of the reactor over the semiconductor substrates which are to be coated. The gas shield permits the use of higher rf input power which contributes to the formation of protective films that have desirable physical and electrical characteristics.

Abstract: A metallization scheme for providing an ohmic contact to n-type III-V semiconductors is described. A metallurgical combination including germanium and palladium is formed on the semiconductor surface either in the form of an alloy or discrete layers. The structure is then heated so that the metallic and semiconductor components interdiffuse to establish the ohmic contact without melting of the metal. One advantage of such a solid state process is the high degree of dimensional control of the contact which is attainable.

Abstract: A metallization scheme for providing an ohmic contact to n-type III-V semiconductors is described. A metallurgical combination including germanium and palladium is formed on the semiconductor surface either in the form of an alloy or discrete layers. The structure is then heated so that the metallic and semiconductor components interdiffuse to establish the ohmic contact without melting of the metal. One advantage of such a solid state process is the high degree of dimensional control of the contact which is attainable.