Abstract: A system, a method and a computer program product for storing data, which include receiving a data stream having a plurality of transactions that include at least one portion of data, determining whether at least one portion of data within at least one transaction is substantially similar to at least another portion of data within at least one transaction, clustering together at least one portion of data and at least another portion of data within at least one transaction, selecting one of at least one portion of data and at least another portion of data as a representative of at least one portion of data and at least another portion of data in the received data stream, and storing each representative of a portion of data from each transaction in the plurality of transactions, wherein a plurality of representatives is configured to form a chain representing the received data stream.

Abstract: A PIN diode has an anode spaced away from a central region of a top surface of a substrate, such that the anode is in a corner or at a side edge of the top surface. Alternatively, the PIN diode has an anode surrounded by a shield layer. The PIN diode reduces unwanted parasitic capacitance to increase the reverse isolation of RF switches and to reduce the diffusion capacitance to increase the f3dB frequency specification of amplifier circuits. The PIN diode dramatically reduces the values of both parasitic and diffusion capacitances, which enables its application in switches and amplifiers under a wide variety of bias conditions including reverse, low-moderate forward, and large forward-bias; which enables bonding to a much larger metal area than the active electrode, with negligible increase in the parasitic capacitance; and which enables reliable wire-bonding by presenting a highly planar metal surface.

Abstract: A system, a method and a computer program product for storing data, which include receiving a data stream having a plurality of transactions that include at least one portion of data, determining whether at least one portion of data within at least one transaction is substantially similar to at least another portion of data within at least one transaction, clustering together at least one portion of data and at least another portion of data within at least one transaction, selecting one of at least one portion of data and at least another portion of data as a representative of at least one portion of data and at least another portion of data in the received data stream, and storing each representative of a portion of data from each transaction in the plurality of transactions, wherein a plurality of representatives is configured to form a chain representing the received data stream.

Abstract: The present invention is a FET having a p-doped or acceptor-doped layer underneath a FET channel to enable E/D Mode operation. A FET threshold voltage is tunable through a voltage applied to the p-doped layer via a metal contact such as a threshold-control terminal (TCT). The present invention has a dual E/D mode operation of a single FET device, and also a dual E/D mode operation with a single-polarity positive power supply voltage. The FET of the present invention is fabricated to enable dual enhancement-mode/depletion-mode (E-Mode/D-Mode) high electron mobility transistors (HEMTs), to enable dual E/D Mode operation by incorporating a p-doped or acceptor doped region underneath the channel, to achieve a tunable threshold voltage by varying the bias voltage on a fourth terminal called the threshold-control terminal (TCT) that contacts the p-doped layer, and to enable Dual E/D-Mode operation of a HEMT with a single-polarity positive power supply voltage.

Abstract: A system, a method and a computer program product for storing data, which include receiving a data stream having a plurality of transactions that include at least one portion of data, determining whether at least one portion of data within at least one transaction is substantially similar to at least another portion of data within at least one transaction, clustering together at least one portion of data and at least another portion of data within at least one transaction, selecting one of at least one portion of data and at least another portion of data as a representative of at least one portion of data and at least another portion of data in the received data stream, and storing each representative of a portion of data from each transaction in the plurality of transactions, wherein a plurality of representatives is configured to form a chain representing the received data stream.

Abstract: The present invention is a FET having a p-doped or acceptor-doped layer underneath a FET channel to enable E/D Mode operation. A FET threshold voltage is tunable through a voltage applied to the p-doped layer via a metal contact such as a threshold-control terminal (TCT). The present invention has a dual E/D mode operation of a single FET device, and also a dual E/D mode operation with a single-polarity positive power supply voltage. The FET of the present invention is fabricated to enable dual enhancement-mode/depletion-mode (E-Mode/D-Mode) high electron mobility transistors (HEMTs), to enable dual E/D Mode operation by incorporating a p-doped or acceptor doped region underneath the channel, to achieve a tunable threshold voltage by varying the bias voltage on a fourth terminal called the threshold-control terminal (TCT) that contacts the p-doped layer, and to enable Dual E/D-Mode operation of a HEMT with a single-polarity positive power supply voltage.

Abstract: The present invention improves the linearity characteristics of a transistor, namely the input/output intercept points (IIP3/OIP3) and intermodulation distortion (IM3), while maintaining a high transconductance and high electron velocity in the conducting channel. The present invention also improves the manufacturability, yield, and immunity to bias-point drift, of a linear transistor. In one embodiment, the present invention implements triple pulse doping or even higher pulse doping for immunity to process variation as well as low parasitic leakage. In an alternative embodiment, the present invention implements a bilinear V-shaped composition grading for engineering the ID-VGS curve for high OIP3. In another alternative embodiment, the present invention implements a quadratic or U-shaped composition grading for engineering the ID-VGS curve for high OIP3.

Abstract: A field effect transistor (FET) includes a substrate, a back barrier disposed on the substrate, a channel disposed on the back barrier, a front barrier disposed on the channel, a source, and a drain, such that at least one of the front barrier and the back barrier includes an anti-barrier-conduction (ABC) spacer which reduces parasitic conduction on a path from the source to the drain through at least one of the front barrier and the back barrier, reduces ON-state leakage from the channel to gate or substrate of the FET via resonant tunneling, and reduces OFF-state leakage by presenting tall barriers to electrons as well as electron-holes. This results in a highly linear, low gate leakage, low parasitic conduction, and low noise operation of FET.

Abstract: Fabrication of a dual enhancement-mode/depletion-mode (E-Mode/D-Mode) high electron mobility transistor (HEMT) called a threshold control terminal HEMT (TCT-HEMT) is performed which reduces capacitance between the TCT electrode and the source and drain electrodes of a TCT-HEMT, since such a capacitance may be parasitic, and which fabricates a TCT-HEMT capable of high-frequency operation. A method for fabricating a field-effect transistor (FET) includes: providing a substrate; disposing a back barrier on the substrate to form a base stack; forming a doped layer on the base stack; grow additional layers, including a threshold-control terminal (TCT) access layer; etch a pattern in at least one of the doped layer and the additional layers; and disposing a TCT contact on the TCT access layer.

Abstract: A PIN diode has an anode spaced away from a central region of a top surface of a substrate, such that the anode is in a corner or at a side edge of the top surface. Alternatively, the PIN diode has an anode surrounded by a shield layer. The PIN diode reduces unwanted parasitic capacitance to increase the reverse isolation of RF switches and to reduce the diffusion capacitance to increase the f3dB frequency specification of amplifier circuits. The PIN diode dramatically reduces the values of both parasitic and diffusion capacitances, which enables its application in switches and amplifiers under a wide variety of bias conditions including reverse, low-moderate forward, and large forward-bias; which enables bonding to a much larger metal area than the active electrode, with negligible increase in the parasitic capacitance; and which enables reliable wire-bonding by presenting a highly planar metal surface.

Abstract: A system, a method, and a computer program product for delta version clustering and re-anchoring are provided. A first anchor having a plurality of delta-compressed versions of data dependent on the first anchor is generated. The first anchor and the plurality of delta-compressed versions form a cluster. A second anchor is generated. The first anchor is replaced with the second anchor. The replacing includes re-computing at least one delta-compressed version in the plurality of delta-compressed versions to be dependent on the second anchor. The second anchor replaces the first anchor as an anchor of the cluster.

Abstract: A system, a method, and a computer program product for delta version clustering and re-anchoring are provided. A first anchor having a plurality of delta-compressed versions of data dependent on the first anchor is generated. The first anchor and the plurality of delta-compressed versions form a cluster. A second anchor is generated. The first anchor is replaced with the second anchor. The replacing includes re-computing at least one delta-compressed version in the plurality of delta-compressed versions to be dependent on the second anchor. The second anchor replaces the first anchor as an anchor of the cluster.

Abstract: A system, a method and a computer program product for storing data, which include receiving a data stream having a plurality of transactions that include at least one portion of data, determining whether at least one portion of data within at least one transaction is substantially similar to at least another portion of data within at least one transaction, clustering together at least one portion of data and at least another portion of data within at least one transaction, selecting one of at least one portion of data and at least another portion of data as a representative of at least one portion of data and at least another portion of data in the received data stream, and storing each representative of a portion of data from each transaction in the plurality of transactions, wherein a plurality of representatives is configured to form a chain representing the received data stream.

Abstract: Embodiments of this invention provide primary magnetic disk data storage capacity to clients while at the same time making sure that client data is replicated locally and at an offsite location to protect from all forms of data loss.

Abstract: The present invention relates to a computer primary data storage system that integrates the functionality of file backup and remote replication to provide an integrated storage system that protects its data from loss related to system or network failures or the physical loss of a data center.

Abstract: The present invention relates to a computer primary data storage system that integrates the functionality of file backup and remote replication to provide an integrated storage system that protects its data from loss related to system or network failures or the physical loss of a data center.

Abstract: Embodiments of this invention provide primary magnetic disk data storage capacity to clients while at the same time making sure that client data is replicated locally and at an offsite location to protect from all forms of data loss.