Abstract: A circuit system includes a current sensor circuit, a subtractor circuit, a multiplier circuit, and a divider circuit. The current sensor circuit generates a current sense signal that indicates a current through an inductor. The circuit system generates a current value based on the current sense signal. The subtractor circuit determines a voltage difference across the inductor. The multiplier circuit multiplies the voltage difference by a time period that the voltage difference is applied across the inductor to generate a product. The divider circuit divides the product by the current value to generate an estimated inductance of the inductor.

Abstract: A voltage regulator package includes a voltage regulator module that outputs a voltage signal of a particular voltage level through an output terminal is provided. The voltage regulator module may be switched on according to a periodic signal having a periodic signal frequency as a variable. The periodic signal frequency may be tuned to reduce impedance, jitter, or noise.

Abstract: A voltage regulator package includes a voltage regulator module that outputs a voltage signal of a particular voltage level through an output terminal is provided. The voltage regulator module may be switched on according to a periodic signal having a periodic signal frequency as a variable. The periodic signal frequency may be tuned to reduce impedance, jitter, or noise.

Abstract: A transistor advantageously embodied in a laterally diffused metal oxide semiconductor device having a gate located over a channel region recessed into a semiconductor substrate and a method of forming the same. In one embodiment, the laterally diffused metal oxide semiconductor device includes a source/drain having a lightly doped region located adjacent the channel region and a heavily doped region located adjacent the lightly doped region. The laterally diffused metal oxide semiconductor device further includes an oppositely doped well located under and within the channel region, and a doped region, located between the heavily doped region and the oppositely doped well, having a doping concentration profile less than a doping concentration profile of the heavily doped region.

Abstract: A transistor advantageously embodied in a laterally diffused metal oxide semiconductor device having a gate located over a channel region recessed into a semiconductor substrate and a method of forming the same. In one embodiment, the laterally diffused metal oxide semiconductor device includes a source/drain having a lightly doped region located adjacent the channel region and a heavily doped region located adjacent the lightly doped region. The laterally diffused metal oxide semiconductor device further includes an oppositely doped well located under and within the channel region, and a doped region, located between the heavily doped region and the oppositely doped well, having a doping concentration profile less than a doping concentration profile of the heavily doped region.

Abstract: A controller for use with a power converter including a switch configured to conduct to provide a regulated output characteristic at an output of the power converter, and method of operating the same. In one embodiment, the controller includes a linear control circuit, coupled to the output, configured to provide a first control signal for the switch as a function of the output characteristic. The controller also includes a nonlinear control circuit, coupled to the output, configured to provide a second control signal for the switch as a function of the output characteristic. The controller is configured to select one of the first and second control signals for the switch in response to a change in an operating condition of the power converter.

Abstract: A magnetic device that includes a magnetic core having a surface facing a conductive substrate. The magnetic device also includes a conductive clip facing a surface of the magnetic core with ends of the conductive clip electrically coupled to the conductive substrate to cooperatively form a winding therewith about the magnetic core.

Abstract: A power module located on a conductive substrate including power conversion circuitry. The power conversion circuitry includes a magnetic device and at least one switch. The magnetic device includes a magnetic core having a surface facing the conductive substrate and a conductive clip facing a surface of the magnetic core with ends of the conductive clip electrically coupled to the conductive substrate to cooperatively form a winding therewith about the magnetic core. The power module also includes an encapsulant about the power conversion circuitry.

Abstract: A method of forming a power module located on a conductive substrate by providing power conversion circuitry. The method of providing the power conversion circuitry includes forming a magnetic device by placing a magnetic core proximate a conductive substrate with a surface thereof facing a conductive substrate, and placing a conductive clip proximate a surface of the magnetic core. The method of forming the magnetic device also includes electrically coupling ends of the conductive clip to the conductive substrate to cooperatively form a winding therewith about the magnetic core. The method of providing the power conversion circuitry also includes providing at least one switch on the conductive substrate. The method of forming the power module also includes depositing an encapsulant about the power conversion circuitry.

Abstract: A method of forming a magnetic device by providing a conductive substrate and placing a magnetic core proximate the conductive substrate with a surface thereof facing the conductive substrate. The method also includes placing a conductive clip proximate a surface of the magnetic core and electrically coupling ends of the conductive clip to the conductive substrate to cooperatively form a winding therewith about the magnetic core.

Abstract: An encapsulatable package for a magnetic device that includes a magnetic core. In one embodiment, the encapsulatable package for the magnetic device also includes a shielding structure located about the magnetic core configured to create a chamber thereabout. The shielding structure is configured to limit an encapsulant entering the chamber.

Abstract: A method of manufacturing an encapsulated package for a magnetic device on a substrate. In one embodiment, the method includes providing a magnetic core on the substrate and placing a shielding structure over the magnetic core to create a chamber thereabout. The method also includes depositing an encapsulant about a portion of the magnetic core within the chamber. The shielding structure limits the encapsulant entering the chamber.

Abstract: An encapsulatable package for a magnetic device that includes a magnetic core. In one embodiment, the encapsulatable package for the magnetic device includes a shielding structure located about the magnetic core configured to create a chamber thereabout and configured to limit an encapsulant entering the chamber. The encapsulatable package for the magnetic device also includes a baffle within the chamber configured to direct the encapsulant away from the magnetic core.

Abstract: A power module located on a substrate. In one embodiment, the power module includes power conversion circuitry with a magnetic device and at least one switch. The magnetic device includes a magnetic core with a shielding structure located about the magnetic core configured to create a chamber thereabout. The power module also includes an encapsulant about the power conversion circuitry. The shielding structure is configured to limit the encapsulant entering the chamber thereby allowing the encapsulant to surround a portion of the magnetic core within the chamber.

Abstract: A method of manufacturing a power module on a substrate. In one embodiment, the method includes providing power conversion circuitry including providing a magnetic device having a magnetic core and at least one switch on the substrate. The method also includes placing a shielding structure over the magnetic core to create a chamber thereabout. The method also includes depositing an encapsulant about the power conversion circuitry. The shielding structure limits the encapsulant entering the chamber thereby allowing the encapsulant to surround a portion of the magnetic core within the chamber.

Abstract: A transistor advantageously embodied in a laterally diffused metal oxide semiconductor device having a gate located over a channel region recessed into a semiconductor substrate and a method of forming the same. In one embodiment, the laterally diffused metal oxide semiconductor device includes a source/drain having a lightly doped region located adjacent the channel region and a heavily doped region located adjacent the lightly doped region. The laterally diffused metal oxide semiconductor device further includes an oppositely doped well located under and within the channel region, and a doped region, located between the heavily doped region and the oppositely doped well, having a doping concentration profile less than a doping concentration profile of the heavily doped region.

Abstract: A method of forming an integrated circuit employable with a power converter. In one embodiment, the method of forming the integrated circuit includes forming a transistor employable as a switch of a power train of the power converter by forming a gate over a semiconductor substrate. The method of forming the transistor also includes forming a source/drain by forming a lightly doped region adjacent a channel region recessed into the semiconductor substrate, forming a heavily doped region adjacent the lightly doped region, and forming an oppositely doped well within the channel region. The method of forming the transistor further includes forming a doped region with a doping concentration profile less than the heavily doped region between the heavily doped region and the oppositely doped well. The method of forming the integrated circuit also includes forming a driver switch of a driver to provide a drive signal to the transistor.

Abstract: An integrated circuit formed on a semiconductor substrate and configured to accommodate higher voltage devices and low voltage devices therein. In one embodiment, the integrated circuit includes a transistor having a gate located over a channel region recessed into a semiconductor substrate, and a source/drain including a lightly doped region located adjacent the channel region and a heavily doped region located adjacent the lightly doped region. The transistor also includes an oppositely doped well located under and within the channel region. The transistor still further includes a doped region, located between the heavily doped region and the oppositely doped well, having a doping concentration profile less than a doping concentration profile of the heavily doped region. The integrated circuit also includes a driver switch of a driver formed on the semiconductor substrate.

Abstract: A method of forming an integrated circuit configured to accommodate higher voltage and low voltage devices. In one embodiment, the method of forming the integrated circuit includes forming a transistor by forming a gate over a semiconductor substrate. The method of forming the transistor also includes forming a source/drain by forming a lightly doped region adjacent a channel region recessed into the semiconductor substrate and forming a heavily doped region adjacent the lightly doped region. The method of forming the transistor further includes forming an oppositely doped well under and within the channel region, and forming a doped region between the heavily doped region and the oppositely doped well. The doped region has a doping concentration profile less than a doping concentration profile of the heavily doped region. The method of forming the integrated circuit also includes forming a driver switch of a driver on the semiconductor substrate.

Abstract: An integrated circuit formed on a semiconductor substrate and configured to accommodate higher voltage devices and low voltage devices therein. In one embodiment, the integrated circuit includes a switch formed on the semiconductor substrate and a driver switch of a driver configured to provide a drive signal to the switch and embodied in a transistor. The transistor includes a gate located over a channel region recessed into a semiconductor substrate, and a source/drain including a lightly doped region located adjacent the channel region and a heavily doped region located adjacent the lightly doped region. The transistor also includes an oppositely doped well located under and within the channel region. The transistor still further includes a doped region, located between the heavily doped region and the oppositely doped well, having a doping concentration profile less than a doping concentration profile of the heavily doped region.