Patents by Inventor Ashraf Uddin

Ashraf Uddin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10229952
    Abstract: The present disclosure provides a photovoltaic device and a method for forming the photovoltaic device. The photovoltaic device comprises a first solar cell structure having a photon absorbing layer comprising an organic material having a first bandgap; and a second solar cell structure having a photon absorbing layer comprising a material that has a Perovskite structure and having a second bandgap. The first and second solar cell structures are positioned at least partially onto each other.
    Type: Grant
    Filed: August 10, 2015
    Date of Patent: March 12, 2019
    Assignee: NEWSOUTH INNOVATIONS PTY LIMITED
    Inventor: Ashraf Uddin
  • Publication number: 20170229518
    Abstract: The present disclosure provides a photovoltaic device and a method for forming the photovoltaic device. The photovoltaic device comprises a first solar cell structure having a photon absorbing layer comprising an organic material having a first bandgap; and a second solar cell structure having a photon absorbing layer comprising a material that has a Perovskite structure and having a second bandgap. The first and second solar cell structures are positioned at least partially onto each other.
    Type: Application
    Filed: August 10, 2015
    Publication date: August 10, 2017
    Inventor: Ashraf Uddin
  • Patent number: 5581087
    Abstract: A radiation detector includes a photodiode composed of an .alpha.-SiC substrate of a first conductivity type, a first .alpha.-SiC layer of the first conductivity type epitaxially formed on the .alpha.-SiC substrate, a second .alpha.-SiC layer of a second conductivity type having higher carriers concentration than the first .alpha.-SiC layer and epitaxially formed on the first .alpha.-SiC layer, a first electrode formed on the .alpha.-SiC substrate in ohmic contact, and a second electrode formed on the second .alpha.-SiC layer in ohmic contact; and a phosphor layer disposed on the photodiode to emit ultraviolet-rays by exposure of radiations.
    Type: Grant
    Filed: February 7, 1995
    Date of Patent: December 3, 1996
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Ashraf Uddin, Fumio Ueno