Patents by Inventor Ashwani K. Sharma

Ashwani K. Sharma has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5691563
    Abstract: Silicon MSM photodiodes sensitive to radiation in the visible to near infrared spectral range are produced by altering the absorption characteristics of crystalline Si by ion implantation. The implantation produces a defected region below the surface of the silicon with the highest concentration of defects at its base which acts to reduce the contribution of charge carriers formed below the defected layer. The charge carriers generated by the radiation in the upper regions of the defected layer are very quickly collected between biased Schottky barrier electrodes which form a metal-semiconductor-metal structure for the photodiode.
    Type: Grant
    Filed: September 12, 1995
    Date of Patent: November 25, 1997
    Assignee: Sandia National Laboratories
    Inventors: Steven R. J. Brueck, David R. Myers, Ashwani K. Sharma
  • Patent number: 5449945
    Abstract: Silicon MSM photodiodes sensitive to radiation in the visible to near infrared spectral range are produced by altering the absorption characteristics of crystalline Si by ion implantation. The implantation produces a defected region below the surface of the silicon with the highest concentration of defects at its base which acts to reduce the contribution of charge carriers formed below the defected layer. The charge carriers generated by the radiation in the upper regions of the defected layer are very quickly collected between biased Schottky barrier electrodes which form a metal-semiconductor-metal structure for the photodiode.
    Type: Grant
    Filed: January 15, 1993
    Date of Patent: September 12, 1995
    Assignee: The United States of America as represented by the U.S. Department of Energy
    Inventors: Steven R. J. Brueck, David R. Myers, Ashwani K. Sharma