Abstract: The present invention provides a method that utilizes an existing infrastructure such as atomic layer deposition or similar vapor-based deposition tool or metal salt solutions based infiltration to infiltrate certain metals or metal-based precursors into resist materials to enhance the performance of the resists for the advancement of lithography techniques.

Abstract: One or more embodiments relates to a substrate consisting of an ultrathin, conductive, shapeless metal oxide on SiO2/Si substrate. In one embodiment, the substrate facilitates experimental characterization of 2D materials simultaneously via optical identification of the single monolayer thickness of 2D materials and electron-based spectro-microscopy characterization.

Abstract: A resistive random access memory (RRAM) device includes a plurality of memory cells, each of at least a subset of the memory cells including first and second electrodes and an organic thin film compound mixed with silver perchlorate (AgClO4) salt as a base layer that is incorporated with a prescribed quantity of inorganic metal oxide molecules using vapor-phase infiltration (VPI), the base layer being formed on an upper surface of the first electrode and the second electrode being formed on an upper surface of the base layer. Resistive switching characteristics of the RRAM device are controlled as a function of a concentration of AgClO4 salt in the base layer. A variation of device switching parameters is controlled as a function of an amount of infiltrated metal oxide molecules in the base layer.

Abstract: The present invention provides a method that utilizes an existing infrastructure such as atomic layer deposition or similar vapor-based deposition tool or metal salt solutions based infiltration to infiltrate certain metals or metal-based precursors into resist materials to enhance the performance of the resists for the advancement of lithography techniques.