Abstract: Some embodiments include an integrated assembly having digit-line-contact-regions between pairs of capacitor-contact-regions. The capacitor-contact-regions are arranged with six adjacent capacitor-contact-regions in a substantially rectangular configuration. Conductive plugs are coupled with the capacitor-contact-regions. Conductive redistribution material is coupled with the conductive plugs. Upper surfaces of the conductive redistribution material are arranged in a substantially hexagonal-close-packed configuration. Digit lines are over the digit-line-contact-regions. Insulative regions are between the digit lines and the conductive plugs. The insulative regions contain voids and/or low-k dielectric material. Capacitors are coupled with the upper surfaces of the conductive redistribution material.

Abstract: Some embodiments include an integrated assembly having digit-line-contact-regions between pairs of capacitor-contact-regions. The capacitor-contact-regions are arranged with six adjacent capacitor-contact-regions in a substantially rectangular configuration. Conductive plugs are coupled with the capacitor-contact-regions. Conductive redistribution material is coupled with the conductive plugs. Upper surfaces of the conductive redistribution material are arranged in a substantially hexagonal-close-packed configuration. Digit lines are over the digit-line-contact-regions. Insulative regions are between the digit lines and the conductive plugs. The insulative regions contain voids and/or low-k dielectric material. Capacitors are coupled with the upper surfaces of the conductive redistribution material.

Abstract: Methods, apparatuses, and systems related to forming a recess in a semiconductor structure are described. An example method includes etching the semiconductor structure using an elevated temperature dilution of acid and water. The method further includes etching the semiconductor structure using a room temperature wet etch of acid and water and a surface modification chemistry.

Abstract: Methods, apparatuses, and systems related to forming a recess in a semiconductor structure are described. An example method includes etching the semiconductor structure using an elevated temperature dilution of acid and water. The method further includes etching the semiconductor structure using a room temperature wet etch of acid and water and a surface modification chemistry.

Abstract: Methods of forming two-dimensional nanopatterns are provided. The method may comprise periodically contacting a vibrating tool comprising a patterned grating edge with a substrate along a first direction in a grating-vibrational indentation patterning process. The patterned grating edge defines a plurality of rows and a plurality of interspersed troughs. The periodic contacting creates a two dimensional array of discontinuous voids in a single-stroke across the surface of the substrate. In other aspects, a microfluidic device for selective arrangement of a microspecies or nanospecies is provided, that includes a substrate comprising a surface defining a two-dimensional pattern of microvoids or nanovoids. In yet other aspects, the present disclosure provides a method for selective arrangement of a microspecies or nanospecies on a substrate.

Abstract: Methods of forming two-dimensional nanopatterns are provided. The method may comprise periodically contacting a vibrating tool comprising a patterned grating edge with a substrate along a first direction in a grating-vibrational indentation patterning process. The patterned grating edge defines a plurality of rows and a plurality of interspersed troughs. The periodic contacting creates a two dimensional array of discontinuous voids in a single-stroke across the surface of the substrate. In other aspects, a microfluidic device for selective arrangement of a microspecies or nanospecies is provided, that includes a substrate comprising a surface defining a two-dimensional pattern of microvoids or nanovoids. In yet other aspects, the present disclosure provides a method for selective arrangement of a microspecies or nanospecies on a substrate.