Abstract: An integrated circuit formed on (i) a single semiconductor die or (ii) a plurality semiconductor dies that are integrated into a single package. The integrated circuit may include a communication interface including a serializer/deserializer (SerDes) interface; a fabric adapter communicatively coupled to the communication interface; a plurality of inference engine clusters, each inference engine cluster including a respective memory element and/or memory interface; and a data interconnect communicatively coupling each respective memory element and/or memory interfaces of the plurality of inference engine clusters to the fabric adapter. The fabric adapter may be configured to facilitate remote direct memory access (RDMA) read and write services and/or datagram communication over a cell-based switch fabric to and from the respective memory elements and/or memory interfaces of the plurality of inference engine clusters via the data interconnect.

Abstract: An integrated circuit formed on (i) a single semiconductor die or (ii) a plurality semiconductor dies that are integrated into a single package. The integrated circuit may include a communication interface including a serializer/deserializer (SerDes) interface; a fabric adapter communicatively coupled to the communication interface; a plurality of inference engine clusters, each inference engine cluster including a respective memory element and/or memory interface; and a data interconnect communicatively coupling each respective memory element and/or memory interfaces of the plurality of inference engine clusters to the fabric adapter. The fabric adapter may be configured to facilitate remote direct memory access (RDMA) read and write services and/or datagram communication over a cell-based switch fabric to and from the respective memory elements and/or memory interfaces of the plurality of inference engine clusters via the data interconnect.

Abstract: An integrated circuit formed on (i) a single semiconductor die or (ii) a plurality semiconductor dies that are integrated into a single package. The integrated circuit may include a communication interface including a serializer/deserializer (SerDes) interface; a fabric adapter communicatively coupled to the communication interface; a plurality of inference engine clusters, each inference engine cluster including a respective memory element and/or memory interface; and a data interconnect communicatively coupling each respective memory element and/or memory interfaces of the plurality of inference engine clusters to the fabric adapter. The fabric adapter may be configured to facilitate remote direct memory access (RDMA) read and write services and/or datagram communication over a cell-based switch fabric to and from the respective memory elements and/or memory interfaces of the plurality of inference engine clusters via the data interconnect.

Abstract: A memory system comprises a plurality of memory sub-systems, each with a memory bank and other circuit components. For each of the memory sub-systems, a first buffer receives and stores a read-modify-write request (with a read address, a write address and a first operand), a second operand is read from the memory bank at the location specified by the read address, a combiner circuit combines the first operand with the second operand, an activation circuit transforms the output of the combiner circuit, and the output of the activation circuit is stored in the memory bank at the location specified by the write address. The first operand and the write address may be stored in a second buffer while the second operand is read from the memory bank. Further, the output of the activation circuit may be first stored in the first buffer before being stored in the memory bank.

Abstract: A memory system comprises a plurality of memory sub-systems, each with a memory bank and other circuit components. For each of the memory sub-systems, a first buffer receives and stores a read-modify-write request (with a read address, a write address and a first operand), a second operand is read from the memory bank at the location specified by the read address, a combiner circuit combines the first operand with the second operand, an activation circuit transforms the output of the combiner circuit, and the output of the activation circuit is stored in the memory bank at the location specified by the write address. The first operand and the write address may be stored in a second buffer while the second operand is read from the memory bank. Further, the output of the activation circuit may be first stored in the first buffer before being stored in the memory bank.

Abstract: A memory system comprises a plurality of memory sub-systems, each with a memory bank and other circuit components. For each of the memory sub-systems, a first buffer receives and stores a read-modify-write request (with a read address, a write address and a first operand), a second operand is read from the memory bank at the location specified by the read address, a combiner circuit combines the first operand with the second operand, an activation circuit transforms the output of the combiner circuit, and the output of the activation circuit is stored in the memory bank at the location specified by the write address. The first operand and the write address may be stored in a second buffer while the second operand is read from the memory bank. Further, the output of the activation circuit may be first stored in the first buffer before being stored in the memory bank.