Abstract: A system including one or more waveguides to receive a first returned reflection having a first lag angle and generate a first waveguide signal, receive a second returned reflection having a second lag angle different from the first lag angle, and generate a second waveguide signal. The system includes one or more photodetectors to generate a first output signal within a first frequency range, and generate, based on the second waveguide signal and a second LO signal, a second output signal within a second frequency range. The system includes an optical frequency shifter (OFS) to shift a frequency of the second LO signal to cause the second output signal to shift from within the second frequency range to within the first frequency range to generate a shifted signal. The system includes a processor to receive the shifted signal to produce one or more points in a point set.

Abstract: A system including one or more waveguides to receive a first returned reflection having a first lag angle and generate a first waveguide signal, receive a second returned reflection having a second lag angle different from the first lag angle, and generate a second waveguide signal. The system includes one or more photodetectors to generate a first output signal within a first frequency range, and generate, based on the second waveguide signal and a second LO signal, a second output signal within a second frequency range. The system includes an optical frequency shifter (OFS) to shift a frequency of the second LO signal to cause the second output signal to shift from within the second frequency range to within the first frequency range to generate a shifted signal. The system includes a processor to receive the shifted signal to produce one or more points in a point set.

Abstract: A system including one or more waveguides to receive a first returned reflection having a first lag angle and generate a first waveguide signal, receive a second returned reflection having a second lag angle different from the first lag angle, and generate a second waveguide signal. The system includes one or more photodetectors to generate a first output signal within a first frequency range, and generate, based on the second waveguide signal and a second LO signal, a second output signal within a second frequency range. The system includes an optical frequency shifter (OFS) to shift a frequency of the second LO signal to cause the second output signal to shift from within the second frequency range to within the first frequency range to generate a shifted signal. The system includes a processor to receive the shifted signal to produce one or more points in a point set.

Abstract: A nanostructured environmental sensor includes a silicon based substrate, a structural base located above the substrate, and a sensor portion suspended above the structural base. A top surface of the sensor portion is formed from nickel oxide using atomic layer deposition. The nanostructured thin film nickel oxide environmental sensor is provided in a housing to form an environmental sensor package for sensing attributes of the environment to which the environmental sensor package is exposed.

Abstract: A modular deformable electronics platform is attachable to a deformable surface, such as skin. The platform is tolerant to surface deformation and motion, can flex in and out of a plane of the platform without hindering operability of electrical components included on the platform, and is formed via arrangement of discrete flexible tiles, with corners of adjacent tiles connected by a flexible connection material so that individual tiles can translate and rotate relative to each other. Interconnects disposed on bases of separate tiles electrically connect adjacent tiles via their connected corners, and electrically connect components disposed on different tiles. Each pair of adjacent corner connections defines an axis about which at least a portion of the platform can flex without deformation and without hindering connections between tiles. The flexible material and/or bases of the tiles can include Parylene.

Abstract: A surface acoustic wave (SAW) device includes a silicon substrate, a piezoelectric substrate formed of lithium niobate, an alumina layer interposed between the silicon substrate and the piezoelectric substrate, and at least one electrode on the piezoelectric substrate.

Abstract: A flexible electronic device includes a flexible electronic circuit and a flexible microfluidic sensor homogeneously integrated into the flexible circuit. The flexible sensor includes a flexible microfluidic structure, a first material, a second material, and an electrode arrangement. At least one of the first and second materials is a fluid. The structure defines at least one microfluidic chamber. The first and second materials are disposed in the chamber. The second material has a physical property and an electrical property different from the first material. The electrode arrangement includes at least one pair of electrodes spaced apart from each other with at least a portion of the at least one chamber located functionally directly therebetween such that at least one electronic property measured across the pair is based on a relationship between the second material and the electrode pair. The relationship is based on a physical condition of the microfluidic structure.

Abstract: A trenched base capacitive humidity sensor includes a plurality of trenches formed in a conductive layer, such as polysilicon or metal, on a substrate. The trenches are arranged parallel to the each other and partition the conductive layer into a plurality of trenched silicon electrodes. At least two trenched silicon electrodes are configured to form a capacitive humidity sensor. The trenches that define the trenched silicon electrodes can be filled partially (e.g., sidewall coverage) or completely with polyimide (Pl) or silicon nitride (SiN). A polyimide layer may also be provided on the conductive layer over the trenches and trenched electrodes. The trenches and the trenched silicon electrodes may have different widths to enable different sensor characteristics in the same structure.

Abstract: A nanostructured environmental sensor includes a silicon based substrate, a structural base located above the substrate, and a sensor portion suspended above the structural base. A top surface of the sensor portion is formed from nickel oxide using atomic layer deposition. The nanostructured thin film nickel oxide environmental sensor is provided in a housing to form an environmental sensor package for sensing attributes of the environment to which the environmental sensor package is exposed.

Abstract: A microelectromechanical systems (MEMS) structure includes a substrate, an epitaxial polysilicon cap located above the substrate, a first cavity portion defined between the substrate and the epitaxial polysilicon cap, and a first graphene component having at least one graphene surface immediately adjacent to the first cavity portion.

Abstract: A semiconductor sensor system, in particular a bolometer, includes a substrate, an electrode supported by the substrate, an absorber spaced apart from the substrate, a voltage source, and a current source. The electrode can include a mirror, or the system may include a mirror separate from the electrode. Radiation absorption efficiency of the absorber is based on a minimum gap distance between the absorber and mirror. The current source applies a DC current across the absorber structure to produce a signal indicative of radiation absorbed by the absorber structure. The voltage source powers the electrode to produce a modulated electrostatic field acting on the absorber to modulate the minimum gap distance. The electrostatic field includes a DC component to adjust the absorption efficiency, and an AC component that cyclically drives the absorber to negatively interfere with noise in the signal.

Abstract: A system and method for mixing fluids using a microfluidic mixing device involves heating a mixing portion of the fluid mixing channel to a Leidenfrost temperature. The Leidenfrost temperature corresponds to a Leidenfrost point of at least one of the fluids to be mixed. The fluids to be mixed are directed through the mixing portion of the fluid mixing channel after the mixing portion is heated to the Leidenfrost temperature.

Abstract: A surface acoustic wave (SAW) device includes a silicon substrate, a piezoelectric substrate formed of lithium niobate, an alumina layer interposed between the silicon substrate and the piezoelectric substrate, and at least one electrode on the piezoelectric substrate.

Abstract: A microelectromechanical systems (MEMS) structure includes a substrate, an epitaxial polysilicon cap located above the substrate, a first cavity portion defined between the substrate and the epitaxial polysilicon cap, and a first graphene component having at least one graphene surface immediately adjacent to the first cavity portion.

Abstract: A flexible electronic device includes a flexible electronic circuit and a flexible microfluidic sensor homogeneously integrated into the flexible circuit. The flexible sensor includes a flexible microfluidic structure, a first material, a second material, and an electrode arrangement. At least one of the first and second materials is a fluid. The structure defines at least one microfluidic chamber. The first and second materials are disposed in the chamber. The second material has a physical property and an electrical property different from the first material. The electrode arrangement includes at least one pair of electrodes spaced apart from each other with at least a portion of the at least one chamber located functionally directly therebetween such that at least one electronic property measured across the pair is based on a relationship between the second material and the electrode pair. The relationship is based on a physical condition of the microfluidic structure.

Abstract: A modular deformable electronics platform is attachable to a deformable surface, such as skin. The platform is tolerant to surface deformation and motion, can flex in and out of a plane of the platform without hindering operability of electrical components included on the platform, and is formed via arrangement of discrete flexible tiles, with corners of adjacent tiles connected by a flexible connection material so that individual tiles can translate and rotate relative to each other. Interconnects disposed on bases of separate tiles electrically connect adjacent tiles via their connected corners, and electrically connect components disposed on different tiles. Each pair of adjacent corner connections defines an axis about which at least a portion of the platform can flex without deformation and without hindering connections between tiles. The flexible material and/or bases of the tiles can include Parylene.

Abstract: A semiconductor sensor system, in particular a bolometer, includes a substrate, an electrode supported by the substrate, an absorber spaced apart from the substrate, a voltage source, and a current source. The electrode can include a mirror, or the system may include a mirror separate from the electrode. Radiation absorption efficiency of the absorber is based on a minimum gap distance between the absorber and mirror. The current source applies a DC current across the absorber structure to produce a signal indicative of radiation absorbed by the absorber structure. The voltage source powers the electrode to produce a modulated electrostatic field acting on the absorber to modulate the minimum gap distance. The electrostatic field includes a DC component to adjust the absorption efficiency, and an AC component that cyclically drives the absorber to negatively interfere with noise in the signal.

Abstract: System and method for forming an ALD assembly on a surface of a microelectromechanical system (MEMS) device comprises a substrate having a surface and the ALD assembly is at least partially disposed on the surface of the substrate, wherein the ALD assembly is at least one of hydrophobic and hydrophilic properties. The ALD layer further includes a first ALD and a second ALD. On the surface of the substrate, the first ALD is deposited in a first deposition cycle and the second ALD is deposited in a second deposition cycle. The ALD assembly further comprises a seed layer formed using atomic layer deposition and the ALD layer is at least partially disposed on the seed layer. In one example, the seed layer is formed from alumina (Al2O3) and the ALD layer is formed from platinum (Pt). In alternate embodiment, on the seed layer, the first ALD is deposited in a first deposition cycle and the second ALD is deposited in a subsequent deposition cycle. The substrate is formed from silicon dioxide (SiO2).

Abstract: A method of manufacturing a semiconductor device includes forming at least one sacrificial layer on a substrate during a complementary metal-oxide-semiconductor (CMOS) process. An absorber layer is deposited on top of the at least one sacrificial layer. A portion of the at least one sacrificial layer beneath the absorber layer is removed to form a gap over which a portion of the absorber layer is suspended. The sacrificial layer can be an oxide of the CMOS process with the oxide being removed to form the gap using a selective hydrofluoric acid vapor dry etch release process. The sacrificial layer can also be a polymer layer with the polymer layer being removed to form the gap using an O2 plasma etching process.

Abstract: A semiconductor device includes a substrate, an insulating film provided on a surface of the substrate, and a sensing film formed of a conductive material deposited on top of the insulating film. The sensing film defines at least one conductive path between a first position and a second position on the insulating film. A first circuit connection is electrically connected to the sensing film at the first position on the insulating layer, and a second circuit connection is electrically connected to the sensing film at the second position. A control circuit is operatively connected to the first circuit connection and the second circuit connection for measuring an electrical resistance of the sensing film. The sensing film has a thickness that enables a resistivity of the sensing film to be altered predictably in a manner that is dependent on ambient moisture content.