Abstract: According to one embodiment, a method includes issuing a read request to read one or more units of data from at least one non-volatile random access memory (NVRAM) device. The read request includes one or more read voltage thresholds. The method also includes receiving the one or more data units and read command parameters used to read the one or more data units from the at least one NVRAM device. Moreover, the method includes storing error-free data units, the read command parameters used to read the error-free data units from the at least one NVRAM device, and a read completion status to one of a plurality of read buffers. The read completion status indicates a completed read when a data unit is error-free and indicates an incomplete read when a data unit is errored.

Abstract: According to one embodiment, a method includes issuing a read request to read one or more units of data from at least one non-volatile random access memory (NVRAM) device. The read request includes one or more read voltage thresholds. The method also includes receiving the one or more data units and read command parameters used to read the one or more data units from the at least one NVRAM device. Moreover, the method includes storing error-free data units, the read command parameters used to read the error-free data units from the at least one NVRAM device, and a read completion status to one of a plurality of read buffers. The read completion status indicates a completed read when a data unit is error-free and indicates an incomplete read when a data unit is errored.

Abstract: According to one embodiment, a system includes a read buffer memory configured to store data to support integrated XOR reconstructed data and read-retry data and logic configured to receive data units and read command parameters used to read the data units from a non-volatile random access memory (NVRAM) device, determine which read buffers from the read buffer memory to store the data units, determine an error status for each of the data units, wherein the error status indicates whether each data unit includes errored data or error-free data, store each error-free data unit and the read command parameters to a corresponding read buffer, reject each errored data unit without affecting a corresponding read buffer, and retry to read only errored data units from the NVRAM device until each of the data units is stored in the read buffer memory.

Abstract: According to one embodiment, a system includes a read butter memory configured to store data to support integrated XOR reconstructed data and read-retry data and logic configured to receive data units and read command parameters used to read the data units from a non-volatile random access memory (NVRAM) device, determine which read buffers from the read buffer memory to store the data units, determine an error status for each of the data units, wherein the error status indicates whether each data unit includes errored data or error-free data, store each error-free data unit and the read command parameters to a corresponding read buffer, reject each errored data unit without affecting a corresponding read buffer, and retry to read only errored data units from the NVRAM device until each of the data units is stored in the read buffer memory.