Abstract: Structures for an avalanche photodetector and methods of forming a structure for an avalanche photodetector. The structure includes a first semiconductor layer having a first portion and a second portion, and a second semiconductor layer stacked in a vertical direction with the first semiconductor layer. The first portion of the first semiconductor layer defines a multiplication region of the avalanche photodetector, and the second semiconductor layer defines an absorption region of the avalanche photodetector. The structure further includes a charge sheet in the second portion of the first semiconductor layer. The charge sheet has a thickness that varies with position in a horizontal plane, and the charge sheet is positioned in the vertical direction between the second semiconductor layer and the first portion of the first semiconductor layer.

Abstract: Structures for a photodetector and methods of fabricating a structure for a photodetector. The structure includes a first waveguide core having a first taper, a semiconductor layer having a sidewall adjacent to the first taper, and a second waveguide core having a second taper that is positioned to overlap with the first taper and a curved section. The second taper is longitudinally positioned between the sidewall of the semiconductor layer and the curved section. The curved section terminates the second waveguide core.

Abstract: Structures for a photodetector and methods of fabricating a structure for a photodetector. The structure includes a first waveguide core having a first taper, a semiconductor layer having a sidewall adjacent to the first taper, and a second waveguide core having a second taper that is positioned to overlap with the first taper and a curved section. The second taper is longitudinally positioned between the sidewall of the semiconductor layer and the curved section. The curved section terminates the second waveguide core.

Abstract: Structures for an avalanche photodetector and methods of forming a structure for an avalanche photodetector. The structure includes a first semiconductor layer having a first portion and a second portion, and a second semiconductor layer stacked in a vertical direction with the first semiconductor layer. The first portion of the first semiconductor layer defines a multiplication region of the avalanche photodetector, and the second semiconductor layer defines an absorption region of the avalanche photodetector. The structure further includes a charge sheet in the second portion of the first semiconductor layer. The charge sheet has a thickness that varies with position in a horizontal plane, and the charge sheet is positioned in the vertical direction between the second semiconductor layer and the first portion of the first semiconductor layer.

Abstract: Methods and systems of training a neural network include training a feature extractor and a classifier using a first set of training data that includes one or more base cases. The classifier is trained with few-shot adaptation using a second set of training data, smaller than the first set of training data, while keeping parameters of the feature extractor constant.

Abstract: A processor collecting advertisement (ad) events of a user using a mobile device, such as a mobile phone or eyewear, parsing the ad events from the mobile device, and generating an ad receptivity profile on the granularity of a user identification (ID) and an hour of day. In one example, the processor computes the percentage of ad time watched by the individual user, such as on an hourly basis, and by monitoring a click-through rate (CTR) of the respective user as a measure for user ad receptivity. The processor adjusts an ad allocation/ad load on a per user basis according the user level ad receptivity profile, resulting in dynamically providing ads on the mobile device display when a user is active and receptive viewing the ads.

Abstract: A processor having a performance engine tracking user engagement of advertisement (ad) events using a mobile device, such as a mobile phone or eyewear, to generate a user level ad receptivity profile. In one example, the processor tracks both the percentage of ad time watched by the individual user, such as on an hourly basis, and ad engagement such as by monitoring a click-through rate (CTR) of the respective user as a measure for user ad receptivity. The processor downloads data from the performance engine to a server processor, and the server processor adjusts an ad allocation/ad load on a per user basis according the user level ad receptivity profile. The server processor dynamically provides ads on the mobile device display when a user is active and receptive viewing the ads.

Abstract: Structures for a photodetector and methods of fabricating a structure for a photodetector. The structure includes a light-absorbing region having a side edge, an anode adjacent to the side edge of the light-absorbing region, and a cathode adjacent to the side edge of the light-absorbing region.

Abstract: Structures for a photodetector and methods of fabricating a structure for a photodetector. The structure includes a light-absorbing region having a side edge, an anode adjacent to the side edge of the light-absorbing region, and a cathode adjacent to the side edge of the light-absorbing region.

Abstract: Packaged integrated devices and methods of forming the same are provided. In one embodiment, a packaged integrated device includes a package substrate, a package lid, and an integrated circuit or microelectromechanical systems (MEMS) device. The package lid is mounted to a first surface of the package substrate using an epoxy, and the package lid and the package substrate define a package interior. The package lid includes an interior coating suited to good adhesion with the epoxy, and an exterior coating suited to RF shielding, where the materials of the interior and exterior coatings are different. In one example, the interior lid coating is nickel whereas the exterior lid coating is tin.

Abstract: Packaged integrated devices and methods of forming the same are provided. In one embodiment, a packaged integrated device includes a package substrate, a package lid, and an integrated circuit or microelectromechanical systems (MEMS) device. The package lid is mounted to a first surface of the package substrate using an epoxy, and the package lid and the package substrate define a package interior. The package lid includes an interior coating suited to good adhesion with the epoxy, and an exterior coating suited to RF shielding, where the materials of the interior and exterior coatings are different. In one example, the interior lid coating is nickel whereas the exterior lid coating is tin.

Abstract: Packaged integrated devices and methods of forming the same are provided. In one embodiment, a packaged integrated device includes a package substrate, a package lid, and an integrated circuit or microelectromechanical systems (MEMS) device. The package lid is mounted to a first surface of the package substrate using an epoxy, and the package lid and the package substrate define a package interior. The package lid includes an interior coating suited to good adhesion with the epoxy, and an exterior coating suited to RF shielding, where the materials of the interior and exterior coatings are different. In one example, the interior lid coating is nickel whereas the exterior lid coating is tin.

Abstract: Packaged integrated devices and methods of forming the same are provided. In one embodiment, a packaged integrated device includes a package substrate, a package lid, and an integrated circuit or microelectromechanical systems (MEMS) device. The package lid is mounted to a first surface of the package substrate using an epoxy, and the package lid and the package substrate define a package interior. The package lid includes an interior coating suited to good adhesion with the epoxy, and an exterior coating suited to RF shielding, where the materials of the interior and exterior coatings are different. In one example, the interior lid coating is nickel whereas the exterior lid coating is tin.