Patents by Inventor Asif J. CHOWDHURY

Asif J. CHOWDHURY has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11803012
    Abstract: Disclosed is a photonic structure and associated method. The structure includes a closed-curve waveguide having a first height, as measured from the top surface of an insulator layer, and an outer curved sidewall that extends essentially vertically the full first height (e.g., to minimize signal loss). The structure includes a closed-curve thermal coupler and a heating element. The closed-curve thermal coupler is thermally coupled to and laterally surrounded by the closed-curve waveguide and has a second height that is less than the first height. In some embodiments, the closed-curve waveguide and the closed-curve thermal coupler are continuous portions of the same semiconductor layer having different thicknesses. The heating element is thermally coupled to the closed-curve thermal coupler and thereby indirectly thermally coupled to the closed-curve waveguide.
    Type: Grant
    Filed: November 15, 2022
    Date of Patent: October 31, 2023
    Assignee: GlobalFoundries U.S. Inc.
    Inventors: Michal Rakowski, Petar I. Todorov, Yusheng Bian, Won Suk Lee, Asif J. Chowdhury, Kenneth J. Giewont
  • Publication number: 20230073958
    Abstract: Disclosed is a photonic structure and associated method. The structure includes a closed-curve waveguide having a first height, as measured from the top surface of an insulator layer, and an outer curved sidewall that extends essentially vertically the full first height (e.g., to minimize signal loss). The structure includes a closed-curve thermal coupler and a heating element. The closed-curve thermal coupler is thermally coupled to and laterally surrounded by the closed-curve waveguide and has a second height that is less than the first height. In some embodiments, the closed-curve waveguide and the closed-curve thermal coupler are continuous portions of the same semiconductor layer having different thicknesses. The heating element is thermally coupled to the closed-curve thermal coupler and thereby indirectly thermally coupled to the closed-curve waveguide.
    Type: Application
    Filed: November 15, 2022
    Publication date: March 9, 2023
    Inventors: Michal Rakowski, Petar I. Todorov, Yusheng Bian, Won Suk Lee, Asif J. Chowdhury, Kenneth J. Giewont
  • Patent number: 11555964
    Abstract: Disclosed is a photonic structure and associated method. The structure includes a closed-curve waveguide having a first height, as measured from the top surface of an insulator layer, and an outer curved sidewall that extends essentially vertically the full first height (e.g., to minimize signal loss). The structure includes a closed-curve thermal coupler and a heating element. The closed-curve thermal coupler is thermally coupled to and laterally surrounded by the closed-curve waveguide and has a second height that is less than the first height. In some embodiments, the closed-curve waveguide and the closed-curve thermal coupler are continuous portions of the same semiconductor layer having different thicknesses. The heating element is thermally coupled to the closed-curve thermal coupler and thereby indirectly thermally coupled to the closed-curve waveguide.
    Type: Grant
    Filed: June 30, 2021
    Date of Patent: January 17, 2023
    Assignee: GlobalFoundries U.S. Inc.
    Inventors: Michal Rakowski, Petar I. Todorov, Yusheng Bian, Won Suk Lee, Asif J. Chowdhury, Kenneth J. Giewont
  • Publication number: 20230003937
    Abstract: Disclosed is a photonic structure and associated method. The structure includes a closed-curve waveguide having a first height, as measured from the top surface of an insulator layer, and an outer curved sidewall that extends essentially vertically the full first height (e.g., to minimize signal loss). The structure includes a closed-curve thermal coupler and a heating element. The closed-curve thermal coupler is thermally coupled to and laterally surrounded by the closed-curve waveguide and has a second height that is less than the first height. In some embodiments, the closed-curve waveguide and the closed-curve thermal coupler are continuous portions of the same semiconductor layer having different thicknesses. The heating element is thermally coupled to the closed-curve thermal coupler and thereby indirectly thermally coupled to the closed-curve waveguide.
    Type: Application
    Filed: June 30, 2021
    Publication date: January 5, 2023
    Applicant: GLOBALFOUNDRIES U.S. Inc.
    Inventors: Michal Rakowski, Petar I. Todorov, Yusheng Bian, Won Suk Lee, Asif J. Chowdhury, Kenneth Giewont
  • Publication number: 20220344523
    Abstract: Structures for a photodetector or light absorber and methods of forming a structure for a photodetector or light absorber. The structure includes a pad, a waveguide core adjoined to the pad, and a light-absorbing layer on the pad. The waveguide core includes a first longitudinal axis, and the light-absorbing layer includes a second longitudinal axis and an end surface intersected by the second longitudinal axis. The end surface of the light-absorbing layer is positioned adjacent to the waveguide core. The first longitudinal axis of the first waveguide core is inclined relative to the second longitudinal axis of the light-absorbing layer and/or the end surface slanted relative to the second longitudinal axis.
    Type: Application
    Filed: April 27, 2021
    Publication date: October 27, 2022
    Inventors: Asif J. Chowdhury, Yusheng Bian, Abdelsalam Aboketaf, Andreas D. Stricker
  • Patent number: 11474294
    Abstract: Structures including a grating coupler and methods of forming a structure that includes a grating coupler. The grating coupler includes segments that are spaced along a longitudinal axis. Each segment is inclined relative to the longitudinal axis. Each segment includes a first curved section having a first curvature and a second curved section having a second curvature that is inverted relative to the first curvature.
    Type: Grant
    Filed: January 29, 2021
    Date of Patent: October 18, 2022
    Assignee: GlobalFoundries U.S. Inc.
    Inventors: Alec Hammond, Yusheng Bian, Michal Rakowski, Won Suk Lee, Asif J. Chowdhury, Roderick A. Augur
  • Patent number: 11415744
    Abstract: Structures for a wavelength-division multiplexing filter and methods of forming a structure for a wavelength-division multiplexing filter. The structure includes a first slab having a first perimeter, a first waveguide core coupled to the first slab, and a plurality of second waveguide cores coupled to the first slab. A second slab is positioned to overlap with the first slab. The second slab includes a second perimeter and openings that are distributed inside the second perimeter. The openings of the second slab penetrate through the second slab.
    Type: Grant
    Filed: February 8, 2021
    Date of Patent: August 16, 2022
    Assignee: GlobalFoundries U.S. Inc.
    Inventors: Alec Hammond, Yusheng Bian, Michal Rakowski, Won Suk Lee, Asif J. Chowdhury, Roderick A. Augur, Abdelsalam Aboketaf
  • Publication number: 20220252784
    Abstract: Structures for a wavelength-division multiplexing filter and methods of forming a structure for a wavelength-division multiplexing filter. The structure includes a first slab having a first perimeter, a first waveguide core coupled to the first slab, and a plurality of second waveguide cores coupled to the first slab. A second slab is positioned to overlap with the first slab. The second slab includes a second perimeter and openings that are distributed inside the second perimeter. The openings of the second slab penetrate through the second slab.
    Type: Application
    Filed: February 8, 2021
    Publication date: August 11, 2022
    Inventors: Alec Hammond, Yusheng Bian, Michal Rakowski, Won Suk Lee, Asif J. Chowdhury, Roderick A. Augur, Abdelsalam Aboketaf
  • Publication number: 20220244457
    Abstract: Structures including a grating coupler and methods of forming a structure that includes a grating coupler. The grating coupler includes segments that are spaced along a longitudinal axis. Each segment is inclined relative to the longitudinal axis. Each segment includes a first curved section having a first curvature and a second curved section having a second curvature that is inverted relative to the first curvature.
    Type: Application
    Filed: January 29, 2021
    Publication date: August 4, 2022
    Inventors: Alec Hammond, Yusheng Bian, Michal Rakowski, Won Suk Lee, Asif J. Chowdhury, Roderick A. Augur
  • Patent number: 11322636
    Abstract: The present disclosure relates to semiconductor structures and, more particularly, to photodiode structures and methods of manufacture. The structure includes: a charge region having a first doping concentration and a variable width; a multiplication region adjacent to the charge region; and an absorption region adjacent to the variable width charge region.
    Type: Grant
    Filed: February 24, 2020
    Date of Patent: May 3, 2022
    Assignee: GLOBALFOUNDRIES U.S. INC.
    Inventors: Asif J. Chowdhury, Ajey Poovannummoottil Jacob, Yusheng Bian, Michal Rakowski
  • Patent number: 11280961
    Abstract: Structures for an optical power splitter and methods of forming a structure for an optical power splitter. A splitter body defines a multimode interference region of the optical power splitter. A first side element positioned adjacent to a first side surface of the splitter body, and a second side element positioned adjacent to a second side surface of the splitter body.
    Type: Grant
    Filed: December 7, 2020
    Date of Patent: March 22, 2022
    Assignee: GlobalFoundries U.S. Inc.
    Inventors: Alec Hammond, Yusheng Bian, Michal Rakowski, Won Suk Lee, Asif J. Chowdhury, Roderick A. Augur
  • Publication number: 20210265519
    Abstract: The present disclosure relates to semiconductor structures and, more particularly, to photodiode structures and methods of manufacture. The structure includes: a charge region having a first doping concentration and a variable width; a multiplication region adjacent to the charge region; and an absorption region adjacent to the variable width charge region.
    Type: Application
    Filed: February 24, 2020
    Publication date: August 26, 2021
    Inventors: Asif J. CHOWDHURY, Ajey Poovannummoottil JACOB, Yusheng BIAN, Michal RAKOWSKI