Patents by Inventor Asit Rairkar

Asit Rairkar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Photovoltaic cell with high efficiency CIGS absorber layer with low minority carrier lifetime and method of making thereof
    Patent number: 10211351
    Abstract: A solar cell containing a plurality of CIGS absorber sublayers has a conversion efficiency of at least 13.4 percent and a minority carrier lifetime below 2 nanoseconds. The sublayers may have a different composition from each other.
    Type: Grant
    Filed: July 12, 2018
    Date of Patent: February 19, 2019
    Assignee: BEIJING APOLLO DING RONG SOLAR TECHNOLOGY CO., LTD.
    Inventors: John Corson, Alex Austin, Robert Tas, Neil Mackie, Mats Larsson, Korhan Demirkan, Weijie Zhang, Jochen Titus, Swati Sevanna, Robert Zubeck, Randy Dorn, Asit Rairkar, Ron Rulkens, Ajay Saproo, Dan Vitkavage
  • PHOTOVOLTAIC CELL WITH HIGH EFFICIENCY CIGS ABSORBER LAYER WITH LOW MINORITY CARRIER LIFETIME AND METHOD OF MAKING THEREOF
    Publication number: 20180337294
    Abstract: A solar cell containing a plurality of CIGS absorber sublayers has a conversion efficiency of at least 13.4 percent and a minority carrier lifetime below 2 nanoseconds. The sublayers may have a different composition from each other.
    Type: Application
    Filed: July 12, 2018
    Publication date: November 22, 2018
    Inventors: John Corson, Alex Austin, Robert Tas, Neil Mackie, Mats Larsson, Korhan Demirkan, Weijie Zhang, Jochen Titus, Swati Sevanna, Robert Zubeck, Randy Dorn, Asit Rairkar, Ron Rulkens, Ajay Saproo, Dan Vitkavage
  • Photovoltaic cell with high efficiency cigs absorber layer with low minority carrier lifetime and method of making thereof
    Patent number: 10043921
    Abstract: A solar cell containing a plurality of CIGS absorber sublayers has a conversion efficiency of at least 13.4 percent and a minority carrier lifetime below 2 nanoseconds. The sublayers may have a different composition from each other.
    Type: Grant
    Filed: December 19, 2012
    Date of Patent: August 7, 2018
    Assignee: BEIJING APOLLO DING RONG SOLAR TECHNOLOGY CO., LTD.
    Inventors: John Corson, Alex Austin, Robert Tas, Neil Mackie, Mats Larsson, Korhan Demirkan, Weijie Zhang, Jochen Titus, Swati Sevanna, Robert Zubeck, Randy Dorn, Asit Rairkar, Ron Rulkens, Ajay Saproo, Dan Vitkavage
  • CIG sputtering target and methods of making and using thereof
    Publication number: 20110089030
    Abstract: A sputtering target includes a copper indium gallium sputtering target material on a backing structure. The sputtering target material has a density of at least 100% or more as defined by the rule of mixtures applied to densities of component elements of the sputtering target material. The sputtering target material has an overall uniform composition.
    Type: Application
    Filed: October 20, 2009
    Publication date: April 21, 2011
    Inventors: Daniel R. Juliano, Bao Nguyen, A. Piers Newbery, Asit Rairkar, Johannes Vlcek, Abdelouahab Ziani
  • Methods and apparatus for engineering an interface between a diffusion barrier layer and a seed layer
    Patent number: 7855147
    Abstract: Copper seed layers are formed on diffusion barrier layers (e.g., on Ta, and TaNx layers) without significant agglomeration of copper, with the use of an engineered barrier layer/seed layer interface. The engineered interface includes an adhesion layer, in which copper atoms are physically trapped and are prevented from migrating and agglomerating. The adhesion layer can include between about 20-80% atomic of copper. The copper atoms of the adhesion layer are exposed during deposition of a copper seed layer and serve as the nucleation sites for the deposited copper. Thin, continuous, and conformal seed layers can be deposited on top of the adhesion layer. The trapping of copper within the adhesion layer is achieved by intermixing diffusion barrier and seed layer materials using PVD and/or ALD.
    Type: Grant
    Filed: May 24, 2007
    Date of Patent: December 21, 2010
    Assignee: Novellus Systems, Inc.
    Inventors: Alexander Dulkin, Asit Rairkar, Frank Greer, Anshu A. Pradhan, Robert Rozbicki