Abstract: An electronic device includes a first electrode, a second electrode, and a memory component configured to store a resistive state. The memory component includes a layered region arranged in direct contact with the first electrode and a bulk region arranged in direct contact with the second electrode. The layered region includes a plurality of first layers made of a first material and a plurality of second layers made of a second material alternatingly arranged with one another. The first material is a phase-change material and the second material is a non-phase-change material. The bulk region is a continuous mass made of a third material that is different than the first material and the second material, and the bulk region is in direct contact with at least two of the first layers and at least one of the second layers of the layered region.

Abstract: Techniques facilitating resistive random-access memory device with step height difference are provided. A resistive random-access memory device can comprise a first electrode located within a trench of a dielectric layer. The resistive random-access memory device can also comprise a metal oxide layer comprising a first section located within the trench of the dielectric layer, and a second section located over the first electrode, and over a barrier metal layer. Further, the resistive random-access memory device can comprise a second electrode located over the metal oxide layer.

Abstract: Techniques facilitating resistive random-access memory device with step height difference are provided. A resistive random-access memory device can comprise a first electrode located within a trench of a dielectric layer. The resistive random-access memory device can also comprise a metal oxide layer comprising a first section located within the trench of the dielectric layer, and a second section located over the first electrode, and over a barrier metal layer. Further, the resistive random-access memory device can comprise a second electrode located over the metal oxide layer.

Abstract: A method of fabricating an access device in a crosspoint memory array structure during BEOL processing includes: forming at least a first doped semiconductor layer on an upper surface of a first conductive layer, the first doped semiconductor layer being in electrical connection with the first conductive layer; exposing at least a portion of the first doped semiconductor layer to a directed energy source to cause localized annealing in the first doped semiconductor layer to activate a dopant of a first conductivity type in the first doped semiconductor layer, thereby converting at least a portion of the first doped semiconductor layer into a polycrystalline layer; forming a second conductive layer over a least a portion of the first doped semiconductor layer; and etching the first doped semiconductor layer and the first and second conductive layers to form an access device that is self-aligned with the first and second conductive layers.

Abstract: A method of fabricating an access device in a crosspoint memory array structure during BEOL processing includes: forming at least a first doped semiconductor layer on an upper surface of a first conductive layer, the first doped semiconductor layer being in electrical connection with the first conductive layer; exposing at least a portion of the first doped semiconductor layer to a directed energy source to cause localized annealing in the first doped semiconductor layer to activate a dopant of a first conductivity type in the first doped semiconductor layer, thereby converting at least a portion of the first doped semiconductor layer into a polycrystalline layer; forming a second conductive layer over a least a portion of the first doped semiconductor layer; and etching the first doped semiconductor layer and the first and second conductive layers to form an access device that is self-aligned with the first and second conductive layers.

Abstract: Devices and/or methods that facilitate forming a resistive memory crossbar array with a multilayer hardmask are provided. In some embodiments, a resistive random access memory (RRAM) can comprise a multilayer hardmask comprising three layers, an interlayer oxide between a first layer of silicon nitride and a second layer of silicon nitride. In other embodiments, an RRAM can comprise a multilayer hardmask comprising two layers, a layer of an oxide on a layer of silicon nitride.

Abstract: Devices and/or methods that facilitate forming a resistive memory crossbar array with a multilayer hardmask are provided. In some embodiments, a resistive random access memory (RRAM) can comprise a multilayer hardmask comprising three layers, an interlayer oxide between a first layer of silicon nitride and a second layer of silicon nitride. In other embodiments, an RRAM can comprise a multilayer hardmask comprising two layers, a layer of an oxide on a layer of silicon nitride.

Abstract: Techniques facilitating resistive random-access memory device with step height difference are provided. A resistive random-access memory device can comprise a first electrode located within a trench of a dielectric layer. The resistive random-access memory device can also comprise a metal oxide layer comprising a first section located within the trench of the dielectric layer, and a second section located over the first electrode, and over a barrier metal layer. Further, the resistive random-access memory device can comprise a second electrode located over the metal oxide layer.

Abstract: The invention features a non-transgenic rat model for early AD, using a metal mixture of As, Cd and Pb, characterized by enhanced synergistic amyloidogenicity in rat cortex and hippocampus. This model can serve as a tool for (a) AD-directed drug screening, and (b) determining mechanism of AD pathogenicity. It features induction of the A?-mediated apoptosis and induction of inflammation in rodent brain. The invention features novel astrocyte and neuronal cellular models for AD, using a metal mixture of As, Cd and Pb, characterized by enhanced synergistic amyloidogenicity. This model can serve as a tool for (a) AD-directed drug screening in astrocytes and neurons, and (b) determining mechanism of AD pathogenicity in cells. It features induction of the A?-mediated apoptosis and induction of inflammation in astrocytes and neurons.