Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a moisture seal for photonic devices and methods of manufacture. The structure includes: a first trench in at least one substrate material; a guard ring structure with an opening and which at least partially surrounds the first trench; and a second trench at a dicing edge of the substrate, the second trench being lined on sidewalls with barrier material and spacer material over the barrier material.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a moisture seal for photonic devices and methods of manufacture. The structure includes: a first trench in at least one substrate material; a guard ring structure with an opening and which at least partially surrounds the first trench; and a second trench at a dicing edge of the substrate, the second trench being lined on sidewalls with barrier material and spacer material over the barrier material.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a moisture seal for photonic devices and methods of manufacture. The structure includes: a first trench in at least one substrate material; a guard ring structure with an opening and which at least partially surrounds the first trench; and a second trench at a dicing edge of the substrate, the second trench being lined on sidewalls with barrier material and spacer material over the barrier material.

Abstract: A photonics integrated circuit includes a semiconductor substrate; a buried insulator layer positioned over the semiconductor substrate; and a back-end-of-line (BEOL) insulator stack over a first portion of the buried insulator layer. In addition, the PIC includes a silicon nitride (SiN) waveguide edge coupler positioned in a first region over the buried insulator layer and at least partially under the BEOL insulator stack. An oxide layer extends over a side of the BEOL insulator stack. The SiN waveguide edge coupler provides better power handling and fabrication tolerance than silicon waveguide edge couplers, despite the location under various BEOL layers. The PIC can also include silicon waveguide edger coupler(s).

Abstract: A photonics integrated circuit includes a semiconductor substrate; a buried insulator layer positioned over the semiconductor substrate; and a back-end-of-line (BEOL) insulator stack over a first portion of the buried insulator layer. In addition, the PIC includes a silicon nitride (SiN) waveguide edge coupler positioned in a first region over the buried insulator layer and at least partially under the BEOL insulator stack. An oxide layer extends over a side of the BEOL insulator stack. The SiN waveguide edge coupler provides better power handling and fabrication tolerance than silicon waveguide edge couplers, despite the location under various BEOL layers. The PIC can also include silicon waveguide edger coupler(s).

Abstract: One illustrative device disclosed herein includes a V-groove in a base semiconductor layer of a semiconductor-on-insulator (SOI) substrate, wherein the V-groove is adapted to have a fiber optics cable positioned therein, and an optical component positioned above the V-groove. The device also includes a first layer of silicon dioxide positioned above the optical component, a second layer of silicon dioxide positioned on and in contact with the first layer of silicon dioxide and a third layer of silicon dioxide positioned on and in contact with the second layer of silicon dioxide.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a moisture seal for photonic devices and methods of manufacture. The structure includes: a first trench in at least one substrate material; a guard ring structure with an opening and which at least partially surrounds the first trench; and a second trench at a dicing edge of the substrate, the second trench being lined on sidewalls with barrier material and spacer material over the barrier material.

Abstract: Structures for an edge coupler and methods of fabricating a structure for an edge coupler. A waveguide core and a coupler are formed over a layer stack that includes a first dielectric layer and a second dielectric layer over the first dielectric layer. The coupler includes a first plurality of grating structures and a transition structure including a second plurality of grating structures that are positioned between the first plurality of grating structures and the waveguide core. The first plurality of grating structures include respective widths that vary as a function of position relative to the transition structure.

Abstract: In one aspect, a method for use in preparing a glass includes performing an ion exchange process by treating the glass with a eutectic mixture including at least a first rubidium salt. In another aspect, a glass is prepared at least in part by performing an ion exchange process by treating the glass with a eutectic mixture including at least a first rubidium salt.

Abstract: In one aspect, a method for use in preparing a glass comprises: performing a first ion exchange process to replace at least a first ion in the glass with at least a second ion, the second ion being smaller than the first ion; and performing a second ion exchange process to replace at least the second ion in the glass with at least a third ion, the third ion being larger than the first ion. In another aspect, a glass is prepared at least in part by: performing a first ion exchange process to replace at least a first ion in the glass with at least a second ion, the second ion being smaller than the first ion; and performing a second ion exchange process to replace at least the second ion in the glass with at least a third ion, the third ion being larger than the first ion.

Abstract: In one aspect, a method for use in preparing a glass includes performing an ion exchange process by treating the glass with a eutectic mixture including at least a first rubidium salt. In another aspect, a glass is prepared at least in part by performing an ion exchange process by treating the glass with a eutectic mixture including at least a first rubidium salt.

Abstract: In one aspect, a method for use in preparing a glass includes performing an ion exchange process by treating the glass with a eutectic mixture including at least a first rubidium salt. In another aspect, a glass is prepared at least in part by performing an ion exchange process by treating the glass with a eutectic mixture including at least a first rubidium salt.

Abstract: In one aspect, a method for use in preparing a glass comprises: performing a first ion exchange process to replace at least a first ion in the glass with at least a second ion, the second ion being smaller than the first ion; and performing a second ion exchange process to replace at least the second ion in the glass with at least a third ion, the third ion being larger than the first ion. In another aspect, a glass is prepared at least in part by: performing a first ion exchange process to replace at least a first ion in the glass with at least a second ion, the second ion being smaller than the first ion; and performing a second ion exchange process to replace at least the second ion in the glass with at least a third ion, the third ion being larger than the first ion.

Abstract: In one aspect, a method for use in preparing a glass comprises: performing a first ion exchange process to replace at least a first ion in the glass with at least a second ion, the second ion being smaller than the first ion; and performing a second ion exchange process to replace at least the second ion in the glass with at least a third ion, the third ion being larger than the first ion. In another aspect, a glass is prepared at least in part by: performing a first ion exchange process to replace at least a first ion in the glass with at least a second ion, the second ion being smaller than the first ion; and performing a second ion exchange process to replace at least the second ion in the glass with at least a third ion, the third ion being larger than the first ion.

Abstract: In one aspect, a method for use in preparing a glass comprises: performing a first ion exchange process to replace at least a first ion in the glass with at least a second ion, the second ion being smaller than the first ion; and performing a second ion exchange process to replace at least the second ion in the glass with at least a third ion, the third ion being larger than the first ion. In another aspect, a glass is prepared at least in part by: performing a first ion exchange process to replace at least a first ion in the glass with at least a second ion, the second ion being smaller than the first ion; and performing a second ion exchange process to replace at least the second ion in the glass with at least a third ion, the third ion being larger than the first ion.

Abstract: In one aspect, a method for use in preparing a glass includes performing an ion exchange process by treating the glass with a eutectic mixture including at least a first rubidium salt. In another aspect, a glass is prepared at least in part by performing an ion exchange process by treating the glass with a eutectic mixture including at least a first rubidium salt.