Patents by Inventor Assaf Duvdevan

Assaf Duvdevan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Overlay target measurement and shift compensation in charged particle systems and related methods
    Patent number: 12754150
    Abstract: A method and system that compensate for differences in response times of different types of sensors of a charged particle system. This involves obtaining first and second secondary electron images and backscattered electron images of an overlay target, scanned with an illuminating electron beam in accordance with first and second scan patterns. A secondary electron shift and a backscattered electron shift are determined based on a registration between the first and a rotated second images. A compensation shift is determined based on these shifts. The images are acquired using a pixel grab period lower than a response period of a backscattered electron sensor used to generate the first backscattered electron image.
    Type: Grant
    Filed: July 3, 2024
    Date of Patent: October 6, 2026
    Assignee: Applied Materials Israel Ltd.
    Inventors: Igor Isakov, Assaf Duvdevan, Harel Azulay, Udi Abrahamov
  • OVERLAY TARGET MEASUREMENT AND SHIFT COMPENSATION IN CHARGED PARTICLE SYSTEMS AND RELATED METHODS
    Publication number: 20260009751
    Abstract: A method and system that compensate for differences in response times of different types of sensors of a charged particle system. This involves obtaining first and second secondary electron images and backscattered electron images of an overlay target, scanned with an illuminating electron beam in accordance with first and second scan patterns. A secondary electron shift and a backscattered electron shift are determined based on a registration between the first and a rotated second images. A compensation shift is determined based on these shifts. The images are acquired using a pixel grab period lower than a response period of a backscattered electron sensor used to generate the first backscattered electron image.
    Type: Application
    Filed: July 3, 2024
    Publication date: January 8, 2026
    Applicant: Applied Materials Israel Ltd.
    Inventors: Igor Isakov, Assaf Duvdevan, Harel Azulay, Udi Abrahamov