Patents by Inventor Assaf Shamir

Assaf Shamir has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240109132
    Abstract: A rotary cutting tool rotatable about a tool axis in a direction of rotation having a front cutting portion and a rear coupling portion. The front cutting portion has a front outer peripheral surface with a plurality of N circumferentially spaced apart cut-outs, each cut-out having an operative cutting edge associated therewith. A central coolant passage extends along the tool axis from a rear end of the rear coupling portion to the front cutting portion. A first plane perpendicular to the tool axis intersects the central coolant passage and the N operative cutting edges. In a cross-section taken in the first plane, the central coolant passage has a non-circular shape with N radially outer coolant regions. At least one coolant duct extends transversely from each radially outer coolant region to intersect with and open out at a corresponding one of the N cut-outs at a coolant exit port.
    Type: Application
    Filed: August 30, 2023
    Publication date: April 4, 2024
    Applicant: ISCAR, LTD.
    Inventors: ITZHAK SHAMIR, ASSAF BALLAS, LIOZ SOSKO
  • Patent number: 11476081
    Abstract: A method, non-transitory computer readable medium and an evaluation system for evaluating an intermediate product related to a three dimensional NAND memory unit. The evaluation system may include an imager and a processing circuit. The imager may be configured to obtain, via an open gap, an electron image of a portion of a structural element that belongs to an intermediate product. The structural element may include a sequence of layers that include a top layer that is followed by alternating nonconductive layers and recessed conductive layers. The imager may include electron optics configured to scan the portion of the structural element with an electron beam that is oblique to a longitudinal axis of the open gap. The processing circuit is configured to evaluate the intermediate product based on the electron image. The open gap (a) exhibits a high aspect ratio, (b) has a width of nanometric scale, and (c) is formed between structural elements of the intermediate product.
    Type: Grant
    Filed: June 30, 2020
    Date of Patent: October 18, 2022
    Assignee: APPLIED MATERIALS ISRAEL LTD.
    Inventors: Roman Kris, Vadim Vereschagin, Assaf Shamir, Elad Sommer, Sharon Duvdevani-Bar, Meng Li Cecilia Lim
  • Patent number: 11056404
    Abstract: An evaluation system that may include an imager; and a processing circuit. The imager may be configured to obtain an electron image of a hole that is formed by an etch process, the hole exposes at least one layer of a one or more sets of layers, each set of layers comprises layers that differ from each other by their electron yield and belong to an intermediate product. The processing circuit may be configured to evaluate, based on the electron image, whether the hole ended at a target layer of the intermediate product. The intermediate product is manufactured by one or more manufacturing stages of a manufacturing process of a three dimensional NAND memory unit. The hole may exhibit a high aspect ratio, and has a width of a nanometric scale.
    Type: Grant
    Filed: December 18, 2019
    Date of Patent: July 6, 2021
    Assignee: APPLIED MATERIALS ISRAEL LTD.
    Inventors: Roman Kris, Grigory Klebanov, Dhananjay Singh Rathore, Einat Frishman, Sharon Duvdevani-Bar, Assaf Shamir, Elad Sommer, Jannelle Anna Geva, Daniel Alan Rogers, Ido Friedler, Avi Aviad Ben Simhon
  • Publication number: 20210193536
    Abstract: An evaluation system that may include an imager; and a processing circuit. The imager may be configured to obtain an electron image of a hole that is formed by an etch process, the hole exposes at least one layer of a one or more sets of layers, each set of layers comprises layers that differ from each other by their electron yield and belong to an intermediate product. The processing circuit may be configured to evaluate, based on the electron image, whether the hole ended at a target layer of the intermediate product. The intermediate product is manufactured by one or more manufacturing stages of a manufacturing process of a three dimensional NAND memory unit. The hole may exhibit a high aspect ratio, and has a width of a nanometric scale.
    Type: Application
    Filed: December 18, 2019
    Publication date: June 24, 2021
    Applicant: APPLIED MATERIALS ISRAEL LTD.
    Inventors: Roman Kris, Grigory Klebanov, Dhananjay Singh Rathore, Einat Frishman, Sharon Duvdevani-Bar, Assaf Shamir, Elad Sommer, Jannelle Anna Geva, Daniel Alan Rogers, Ido Friedler, Avi Aviad Ben Simhon
  • Publication number: 20210066026
    Abstract: A method, non-transitory computer readable medium and an evaluation system for evaluating an intermediate product related to a three dimensional NAND memory unit. The evaluation system may include an imager and a processing circuit. The imager may be configured to obtain, via an open gap, an electron image of a portion of a structural element that belongs to an intermediate product. The structural element may include a sequence of layers that include a top layer that is followed by alternating nonconductive layers and recessed conductive layers. The imager may include electron optics configured to scan the portion of the structural element with an electron beam that is oblique to a longitudinal axis of the open gap. The processing circuit is configured to evaluate the intermediate product based on the electron image. The open gap (a) exhibits a high aspect ratio, (b) has a width of nanometric scale, and (c) is formed between structural elements of the intermediate product.
    Type: Application
    Filed: June 30, 2020
    Publication date: March 4, 2021
    Applicant: APPLIED MATERIALS ISRAEL LTD.
    Inventors: Roman Kris, Vadim Vereschagin, Assaf Shamir, Elad Sommer, Sharon Duvdevani-Bar, Meng Li Cecilia Lim