Abstract: An optical semiconductor element includes: a substrate; and a plurality of cells formed on the substrate, the plurality of cells including a first cell, a second cell, and a third cell. A first electrode electrically connected to a first semiconductor layer of the first cell is arranged on the top surface of the first cell, and a second electrode electrically connected to a second semiconductor layer of the third cell is arranged on the top surface of the second cell. Each of the first electrode and the second electrode has a planned contact region with which solder comes into contact during electrical connection with an external member. When viewed from the thickness direction of the substrate, the area of the second electrode on the top surface of the second cell is smaller than the area of the first electrode on the top surface of the first cell.

Abstract: An optical semiconductor element includes a substrate, a first termination cell, and a cell. A first electrode is arranged on the top surface of the first termination cell. The first termination cell and the cell are connected to each other by a wiring layer extending from the top surface of the first termination cell to the cell. The first electrode is exposed to the outside through an opening formed in an insulating layer. The wiring layer is spaced apart from the first electrode on the top surface of the first termination cell, and is electrically connected to the first electrode via a first semiconductor layer. The first portion has a contact region in contact with the first semiconductor layer. The width of the contact region is equal to or greater than the width of the opening.

Abstract: A light-emitting diode element includes a semiconductor substrate having a first surface and a second surface on a side opposite to the first surface, a semiconductor lamination portion formed on the first surface of the semiconductor substrate, a first electrode connected to a part of the semiconductor lamination portion on the semiconductor substrate side, and a second electrode connected to a part of the semiconductor lamination portion on a side opposite to the semiconductor substrate. The semiconductor lamination portion includes an n-type semiconductor layer, an active layer having a p-type conductivity and laminated on the n-type semiconductor layer, and a p-type semiconductor layer laminated on the active layer on a side opposite to the n-type semiconductor layer. The active layer has a multiple quantum well structure constituted of barrier layers including AlInAs and well layers including InAsSb alternately laminated therein.

Abstract: A light emitting diode element includes: a first element portion including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a first active layer; and a second element portion including a third semiconductor layer of the first conductivity type, a fourth semiconductor layer of the second conductivity type, and a second active layer. The first and second element portions are electrically connected to each other by a tunnel junction portion. When the first conductivity type is n-type, the first element portion includes an electron barrier layer arranged between the first active layer and the tunnel junction portion. When the first conductivity type is p-type, the second element portion includes an electron barrier layer arranged between the second active layer and the tunnel junction portion. The electron barrier layer includes AlGaAsSb or AlInAsSb.

Abstract: This infrared detection element includes a buffer layer (InAsSb layer) 3, a buffer layer (InAs layer) 4, and a light absorption layer (InAsSb layer) 5. A critical film thickness hc of the InAs layer satisfies a relation of hc<t with a thickness t of the InAs layer. In this case, it is possible to improve crystallinities of the buffer layer 4 of InAs and the light absorption layer 5 of InAsSb formed on the buffer layer 3.

Abstract: This infrared detection element includes a buffer layer (InAsSb layer) 3, a buffer layer (InAs layer) 4, and a light absorption layer (InAsSb layer) 5. A critical film thickness he of the InAs layer satisfies a relation of hc<t with a thickness t of the InAs layer. In this case, it is possible to improve crystallinities of the buffer layer 4 of InAs and the light absorption layer 5 of InAsSb formed on the buffer layer 3.