Abstract: A light-emitting diode element includes a semiconductor substrate having a first surface and a second surface on a side opposite to the first surface, a semiconductor lamination portion formed on the first surface of the semiconductor substrate, a first electrode connected to a part of the semiconductor lamination portion on the semiconductor substrate side, and a second electrode connected to a part of the semiconductor lamination portion on a side opposite to the semiconductor substrate. The semiconductor lamination portion includes an n-type semiconductor layer, an active layer having a p-type conductivity and laminated on the n-type semiconductor layer, and a p-type semiconductor layer laminated on the active layer on a side opposite to the n-type semiconductor layer. The active layer has a multiple quantum well structure constituted of barrier layers including AlInAs and well layers including InAsSb alternately laminated therein.

Abstract: A light emitting diode element includes: a first element portion including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a first active layer; and a second element portion including a third semiconductor layer of the first conductivity type, a fourth semiconductor layer of the second conductivity type, and a second active layer. The first and second element portions are electrically connected to each other by a tunnel junction portion. When the first conductivity type is n-type, the first element portion includes an electron barrier layer arranged between the first active layer and the tunnel junction portion. When the first conductivity type is p-type, the second element portion includes an electron barrier layer arranged between the second active layer and the tunnel junction portion. The electron barrier layer includes AlGaAsSb or AlInAsSb.

Abstract: This infrared detection element includes a buffer layer (InAsSb layer) 3, a buffer layer (InAs layer) 4, and a light absorption layer (InAsSb layer) 5. A critical film thickness hc of the InAs layer satisfies a relation of hc<t with a thickness t of the InAs layer. In this case, it is possible to improve crystallinities of the buffer layer 4 of InAs and the light absorption layer 5 of InAsSb formed on the buffer layer 3.

Abstract: This infrared detection element includes a buffer layer (InAsSb layer) 3, a buffer layer (InAs layer) 4, and a light absorption layer (InAsSb layer) 5. A critical film thickness he of the InAs layer satisfies a relation of hc<t with a thickness t of the InAs layer. In this case, it is possible to improve crystallinities of the buffer layer 4 of InAs and the light absorption layer 5 of InAsSb formed on the buffer layer 3.