Abstract: This substrate processing method includes supplying a chemical liquid to an upper surface of a substrate and rinsing away the chemical liquid adhering to the upper surface of the substrate by holding a puddled rinse liquid on the substrate while maintaining a rotation speed of the substrate at a zero or low speed, and a chemical liquid puddle step of holding a liquid film of a puddled chemical liquid on the upper surface of the substrate while maintaining the rotation speed of the substrate at a zero or low speed, and the rinsing step is performed subsequent to finishing the chemical liquid puddle step, and the rinsing step includes supplying a rinse liquid to the upper surface of the substrate and then replacing the liquid film of the chemical liquid held on the upper surface of the substrate with the rinse liquid.

Abstract: A treatment cup cleaning method is provided, which includes: a rotating step of rotating a substrate rotating unit with a substrate being held by the substrate rotating unit; a cleaning liquid supplying step of supplying a cleaning liquid to an upper surface and a lower surface of the substrate and causing the cleaning liquid to scatter from a peripheral edge of the substrate to be applied to an inner wall of a treatment cup in the rotating step, whereby the cleaning liquid is supplied to the inner wall of the treatment cup; and a scattering direction changing step of changing a cleaning liquid scattering direction in which the cleaning liquid scatters from the peripheral edge of the substrate in the rotating step and the cleaning liquid supplying step.

Abstract: A substrate treatment method is provided, which includes a rinsing step of supplying a rinse liquid to a front surface of a rotating substrate after a chemical liquid step. The rinsing step includes a higher-speed rinsing step and a deceleration rinsing step to be performed after the higher-speed rinsing step. The deceleration rinsing step includes a liquid puddling step of reducing the rotation speed of the substrate within a rotation speed range lower than a rotation speed employed in the higher-speed rinsing step and supplying the rinse liquid to the front surface of the substrate at a flow rate higher than a maximum supply flow rate employed in the higher-speed rinsing step, whereby a puddle-like rinse liquid film is formed on the front surface of the substrate.

Abstract: A special mode has a second rinsing process which supplies a rinsing liquid to a substrate while holding and rotating the substrate with a spin chuck under operating conditions different from those in a first rinsing process in a normal mode. In the second rinsing process, a processing cup is cleaned with the rinsing liquid flown off from the rotating substrate. In the second rinsing process in which the substrate is held by the spin chuck, the rinsing liquid flown off from the substrate is less prone to collide with chuck members. The provision of a mechanism designed specifically for the cleaning of the cup is not required in the special mode. The special mode is a mode executable when a substrate is present inside a chamber, and can be executed in the middle of lot processing.

Abstract: This substrate processing method includes supplying a chemical liquid to an upper surface of a substrate and rinsing away the chemical liquid adhering to the upper surface of the substrate by holding a puddled rinse liquid on the substrate while maintaining a rotation speed of the substrate at a zero or low speed, and a chemical liquid puddle step of holding a liquid film of a puddled chemical liquid on the upper surface of the substrate while maintaining the rotation speed of the substrate at a zero or low speed, and the rinsing step is performed subsequent to finishing the chemical liquid puddle step, and the rinsing step includes supplying a rinse liquid to the upper surface of the substrate and then replacing the liquid film of the chemical liquid held on the upper surface of the substrate with the rinse liquid.

Abstract: A substrate treatment method employs a substrate holding unit, a gas ejection nozzle, and a gas supply unit. The substrate holding unit is configured to hold a substrate. The gas supply unit is configured to supply a gas to the gas ejection nozzle. The gas ejection nozzle is disposed to be positioned adjacent a center portion of the substrate held by the substrate holding unit. The gas ejection nozzle has a gas ejection port. The gas ejection nozzle is configured to eject the gas radially from the gas ejection port over the substrate held by the substrate holding unit to form a gas-flow for covering the substrate.

Abstract: A treatment cup cleaning method is provided, which includes: a rotating step of rotating a substrate rotating unit with a substrate being held by the substrate rotating unit; a cleaning liquid supplying step of supplying a cleaning liquid to an upper surface and a lower surface of the substrate and causing the cleaning liquid to scatter from a peripheral edge of the substrate to be applied to an inner wall of a treatment cup in the rotating step, whereby the cleaning liquid is supplied to the inner wall of the treatment cup; and a scattering direction changing step of changing a cleaning liquid scattering direction in which the cleaning liquid scatters from the peripheral edge of the substrate in the rotating step and the cleaning liquid supplying step.

Abstract: A substrate treatment method is provided, which includes a rinsing step of supplying a rinse liquid to a front surface of a rotating substrate after a chemical liquid step. The rinsing step includes a higher-speed rinsing step and a deceleration rinsing step to be performed after the higher-speed rinsing step. The deceleration rinsing step includes a liquid puddling step of reducing the rotation speed of the substrate within a rotation speed range lower than a rotation speed employed in the higher-speed rinsing step and supplying the rinse liquid to the front surface of the substrate at a flow rate higher than a maximum supply flow rate employed in the higher-speed rinsing step, whereby a puddle-like rinse liquid film is formed on the front surface of the substrate.

Abstract: A special mode has a second rinsing process which supplies a rinsing liquid to a substrate while holding and rotating the substrate with a spin chuck under operating conditions different from those in a first rinsing process in a normal mode. In the second rinsing process, a processing cup is cleaned with the rinsing liquid flown off from the rotating substrate. In the second rinsing process in which the substrate is held by the spin chuck, the rinsing liquid flown off from the substrate is less prone to collide with chuck members. The provision of a mechanism designed specifically for the cleaning of the cup is not required in the special mode. The special mode is a mode executable when a substrate is present inside a chamber, and can be executed in the middle of lot processing.

Abstract: A substrate treatment apparatus includes a substrate holding unit, a gas ejection nozzle, and a gas supply unit. The substrate holding unit is configured to hold a substrate. The gas supply unit is configured to supply a gas to the gas ejection nozzle. The gas ejection nozzle is disposed to be positioned adjacent a center portion of the substrate held by the substrate holding unit. The gas ejection nozzle has a gas ejection port. The gas ejection nozzle is configured to eject the gas radially from the gas ejection port over the substrate held by the substrate holding unit to form a gas-flow for covering the substrate.

Abstract: A substrate treatment method employs a substrate holding unit, a gas ejection nozzle, and a gas supply unit. The substrate holding unit is configured to hold a substrate. The gas supply unit is configured to supply a gas to the gas ejection nozzle. The gas ejection nozzle is disposed to be positioned adjacent a center portion of the substrate held by the substrate holding unit. The gas ejection nozzle has a gas ejection port. The gas ejection nozzle is configured to eject the gas radially from the gas ejection port over the substrate held by the substrate holding unit to form a gas-flow for covering the substrate.

Abstract: A substrate treatment apparatus includes a substrate holding unit, a gas ejection nozzle, and a gas supply unit. The substrate holding unit is configured to hold a substrate. The gas supply unit is configured to supply a gas to the gas ejection nozzle. The gas ejection nozzle is disposed to be positioned adjacent a center portion of the substrate held by the substrate holding unit. The gas ejection nozzle has a gas ejection port. The gas ejection nozzle is configured to eject the gas radially from the gas ejection port over the substrate held by the substrate holding unit to form a gas-flow for covering the substrate.