Patents by Inventor ASWINI PRADHAN

ASWINI PRADHAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Radiation detector
    Patent number: 10502842
    Abstract: Technologies are described for semiconductor radiation detectors. The semiconductor radiation detectors may comprise a semiconductor material. The semiconductor material may include a first surface and a second surface. The first surface may be opposite from the second surface. The semiconductor material may include at least one metal component. The semiconductor material may be effective to absorb radiation and induce a current pulse in response thereto. The semiconductor radiation detector may comprise an electrode contact. The electrode contact may include a metal doped oxide deposited on the first surface of the semiconductor material. The metal doped oxide may include the metal component element of the semiconductor material.
    Type: Grant
    Filed: February 12, 2016
    Date of Patent: December 10, 2019
    Assignees: BROOKHAVEN SCIENCE ASSOCIATES, LLC, NORFOLK STATE UNIVERSITY
    Inventors: Utpal N. Roy, Ralph B. James, Giuseppe Camarda, Yonggang Cui, Anwar Hossain, Ge Yang, Aswini Pradhan, Rajeh Mundle
  • RADIATION DETECTOR
    Publication number: 20180024254
    Abstract: Technologies are described for semiconductor radiation detectors. The semiconductor radiation detectors may comprise a semiconductor material. The semiconductor material may include a first surface and a second surface. The first surface may be opposite from the second surface. The semiconductor material may include at least one metal component. The semiconductor material may be effective to absorb radiation and induce a current pulse in response thereto. The semiconductor radiation detector may comprise an electrode contact. The electrode contact may include a metal doped oxide deposited on the first surface of the semiconductor material. The metal doped oxide may include the metal component element of the semiconductor material.
    Type: Application
    Filed: February 12, 2016
    Publication date: January 25, 2018
    Applicants: BROOKHAVEN SCIENCE ASSOCIATES, LLC, NORFOLK STATE UNIVERSITY
    Inventors: UTPAL N. ROY, RALPH B. JAMES, ALEKSEY BOLOTNIKOV, GIUSEPPE CAMARDA, YONGGANG CUI, ANWAR HOSSAIN, GE YANG, ASWINI PRADHAN, RAJ EH MUNDLE