Abstract: The present disclosure relates to removal compositions for at least partially removing post-chemical mechanical polishing (post-CMP) residues from the surface of a microelectronic device. The removal compositions comprise an aqueous base composition and various molybdenum etching inhibitors that reduce the amount of molybdenum removed from the surface of the microelectronic device compared to the aqueous base composition.

Abstract: The invention provides compositions useful in post-CMP cleaning operations where ceria is present. In one aspect, the invention provides a composition comprising a reducing agent; a chelating agent; an amino(C6-C12 alkyl)alcohol; and water; wherein the composition has a pH of less than about 8. The compositions of the invention were found to show improved ceria removal on, for example, poly silicon (poly Si) substrates. Also provided is a method for cleaning a microelectronic device substrate using such compositions and a kit comprising, in one or more containers, selected components of the compositions.

Abstract: Provided are compositions and methods useful in the post-CMP cleaning of microelectronic devices, in particular, devices which contain one or more surfaces comprising hydrophobic carbon or SiC. In general, the compositions comprise a chelating agent; a water-miscible solvent; a reducing agent; and a pH adjustor, wherein the composition has a pH of about 2 to about 13.

Abstract: A composition and method for etching molybdenum-containing film on a microelectronic device substrate is provided. A microelectronic device substrate is contacted with the composition of the invention for a time sufficient to at least partially remove the molybdenum-containing film. The composition comprises at least one oxidizing agent, at least one complexing agent, at least one cationic surfactant, and has a pH of from about 7.5 to about 13. The etchant composition selectively removes molybdenum at an etch rate of about 20 to 50 ?/minute at room temperature, with improved uniformity of removal.

Abstract: An etchant composition and method for etching molybdenum from a microelectronic device at an etch rate are described. A microelectronic device is contacted with an etchant composition for a time sufficient to at least partially remove the molybdenum. The etchant composition comprises at least one oxidizing agent, at least one oxidizing agent stabilizer, and at least one base and has a pH of from 7.5 to 13. The etchant composition selectively removes molybdenum at an etch rate of 5-200 ?/min.

Abstract: An etchant composition and method for etching molybdenum from a microelectronic device at an etch rate are described. A microelectronic device is contacted with an etchant composition for a time sufficient to at least partially remove the molybdenum. The etchant composition comprises at least one oxidizing agent, at least one oxidizing agent stabilizer, and at least one base and has a pH of from 7.5 to 13. The etchant composition selectively removes molybdenum at an etch rate of 5-200 ?/min.

Abstract: A composition for cleaning a microelectronic device substrate is provided. The composition is useful for cleaning in-process microelectronic device substrates possessing exposed cobalt, molybdenum, copper, molybdenum, tungsten, and dielectric surfaces. Also provided is a method for cleaning such devices and a kit comprising one or more of the components of the composition.

Abstract: An etchant composition and method for etching molybdenum from a microelectronic device at an etch rate are described. A microelectronic device is contacted with an etchant composition for a time sufficient to at least partially remove the molybdenum. The etchant composition comprises at least one oxidizing agent, at least one oxidizing agent stabilizer, and at least one base and has a pH of from 7.5 to 13. The etchant composition selectively removes molybdenum at an etch rate of 5-200 ?/min.

Abstract: A removal composition and process for cleaning post-chemical mechanical polishing (CMP) contaminants and ceria particles from a microelectronic device having said particles and contaminants thereon. The composition achieves highly efficacious removal of the ceria particles and CMP by-product contaminant material from the surface of the microelectronic device without compromising the low-k dielectric, silicon nitride, or tungsten-containing materials.

Abstract: The present invention generally relates to a removal composition and process, particularly useful for cleaning ceria particles and CMP contaminants from microelectronic devices having said particles and CMP contaminants thereon, in particular microelectronic devices having PETEOS, Silicon Nitride, and Poly-Si substrates. In one aspect, the invention provides treatment of the microelectronic substrate having ceria particles thereon utilizing complexing agents free of Sulfur and Phosphorous atoms.

Abstract: The present invention generally relates to a removal composition and process, particularly useful for cleaning ceria particles and CMP contaminants from microelectronic devices having said particles and CMP contaminants thereon, in particular microelectronic devices having PETEOS, Silicon Nitride, and Poly-Si substrates. In one aspect, the invention provides treatment of the microelectronic substrate having ceria particles thereon utilizing complexing agents free of Sulfur and Phosphorous atoms.

Abstract: A removal composition and process for cleaning post-chemical mechanical polishing (CMP) contaminants and ceria particles from a microelectronic device having said particles and contaminants thereon. The composition achieves highly efficacious removal of the ceria particles and CMP by-product contaminant material from the surface of the microelectronic device without compromising the low-k dielectric, silicon nitride, or tungsten-containing materials.