Abstract: The present invention relates to carbon based materials that are employed for hydrogen storage applications. The material may be described as the pyrolysis product of a molecular precursor such as a cyclic quinone compound. The pyrolysis product may then be combined with selected transition metal atoms which may be in nanoparticulate form, where the metals may be dispersed on the material surface. Such product may then provide for the reversible storage of hydrogen. The metallic nanoparticles may also be combined with a second metal as an alloy to further improve hydrogen storage performance.

Abstract: The invention provides a composition that is a dispersion made from a Group III nitride, a solvent system, and a dispersant. The dispersion can be used to prepare Group III nitride thin films on a wide range of substrates, for example, glass, silicon, silicon dioxide, silicon nitride, silicon carbide, aluminum nitride, sapphire, and organic polymers. The particle size of the Group III nitride used for producing the thin films can be controlled by adjusting centrifugation of the dispersion and selecting a desired layer of supernatant. The dispersant can be removed from the thin films by calcination. The Group III nitride can contain a dopant. Doped Group III nitride thin films can emit visible light upon irradiation. Green, red, and yellow light emissions result from irradiating erbium-, europium-, and cerium-doped gallium nitride, respectively.

Abstract: The present invention relates to carbon based materials that are employed for hydrogen storage applications. The material may be described as the pyrolysis product of a molecular precursor such as a cyclic quinone compound. The pyrolysis product may then be combined with selected transition metal atoms which may be in nanoparticulate form, where the metals may be dispersed on the material surface. Such product may then provide for the reversible storage of hydrogen. The metallic nanoparticles may also be combined with a second metal as an alloy to further improve hydrogen storage performance.

Abstract: The invention provides a composition that is a dispersion made from a Group III nitride, a solvent system, and a dispersant. The dispersion can be used to prepare Group III nitride thin films on a wide range of substrates, for example, glass, silicon, silicon dioxide, silicon nitride, silicon carbide, aluminum nitride, sapphire, and organic polymers. The particle size of the Group III nitride used for producing the thin films can be controlled by adjusting centrifugation of the dispersion and selecting a desired layer of supernatant. The dispersant can be removed from the thin films by calcination. The Group III nitride can contain a dopant. Doped Group III nitride thin films can emit visible light upon irradiation. Green, red, and yellow light emissions result from irradiating erbium-, europium-, and cerium-doped gallium nitride, respectively.

Abstract: Compound containing at least 15% inorganic content demonstrates liquid-like behavior and is distinct in exhibiting liquid-like behavior in the absence of solvent. In one case it is quaternary ammonium derivative of a heteropolyacid. In another case, it is a salt formed by reaction of heteropolyacid and polyethylene glycol alkylamine. In other cases, it is condensation product of oxide and quaternary ammonium cation where the balancing anion has a molecular weight greater than 200. In still other cases it is a salt formed by reaction of sulfonated silica or sulfonated fullerene and polyethylene glycol alkylamine. In still other cases, it is a neutral organic-inorganic hybrid which is PEG-functionalized silica nanoparticle or is a layered-nanoparticle obtained by hydrolytic polymerization of organosilane in nonpolar solvent.